DE68909084T2 - Hochempfindlicher Resist für das mittlere und tiefe UV. - Google Patents
Hochempfindlicher Resist für das mittlere und tiefe UV.Info
- Publication number
- DE68909084T2 DE68909084T2 DE89302865T DE68909084T DE68909084T2 DE 68909084 T2 DE68909084 T2 DE 68909084T2 DE 89302865 T DE89302865 T DE 89302865T DE 68909084 T DE68909084 T DE 68909084T DE 68909084 T2 DE68909084 T2 DE 68909084T2
- Authority
- DE
- Germany
- Prior art keywords
- deep
- medium
- highly sensitive
- sensitive resist
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17570688A | 1988-03-31 | 1988-03-31 | |
US22908888A | 1988-08-05 | 1988-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68909084D1 DE68909084D1 (de) | 1993-10-21 |
DE68909084T2 true DE68909084T2 (de) | 1994-01-13 |
Family
ID=26871494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89302865T Expired - Fee Related DE68909084T2 (de) | 1988-03-31 | 1989-03-22 | Hochempfindlicher Resist für das mittlere und tiefe UV. |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP0336605B1 (de) |
JP (1) | JPH0778627B2 (de) |
KR (1) | KR940001550B1 (de) |
AU (1) | AU3127689A (de) |
DE (1) | DE68909084T2 (de) |
DK (1) | DK155289A (de) |
IL (1) | IL89632A (de) |
NO (1) | NO891062L (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02110462A (ja) * | 1988-06-21 | 1990-04-23 | Mitsubishi Kasei Corp | ポジ型フォトレジスト |
JPH04328747A (ja) * | 1991-03-27 | 1992-11-17 | Internatl Business Mach Corp <Ibm> | 均一にコートされたフォトレジスト組成物 |
KR100341563B1 (ko) * | 1992-03-23 | 2002-10-25 | 제이에스알 가부시끼가이샤 | 레지스트도포조성물 |
DE4209343A1 (de) * | 1992-03-23 | 1993-09-30 | Hoechst Ag | 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial |
US5612164A (en) * | 1995-02-09 | 1997-03-18 | Hoechst Celanese Corporation | Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone |
KR100363273B1 (ko) * | 2000-07-29 | 2002-12-05 | 주식회사 동진쎄미켐 | 액정표시장치 회로용 포토레지스트 조성물 |
KR101324645B1 (ko) * | 2006-05-08 | 2013-11-01 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 |
JP2017088675A (ja) * | 2015-11-05 | 2017-05-25 | Dic株式会社 | ノボラック型フェノール性水酸基含有樹脂及びレジスト材料 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3274354D1 (en) * | 1981-06-22 | 1987-01-08 | Hunt Chem Corp Philip A | Novolak resin and a positive photoresist composition containing the same |
JPS5817112A (ja) * | 1981-06-22 | 1983-02-01 | フイリツプ・エイ・ハント・ケミカル・コ−ポレイシヨン | ポジ型ノボラツクホトレジスト組成物及びその調製物 |
DE3220816A1 (de) * | 1982-06-03 | 1983-12-08 | Merck Patent Gmbh, 6100 Darmstadt | Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien |
JPH0658529B2 (ja) * | 1983-08-17 | 1994-08-03 | 三菱化成株式会社 | ポジ型クレゾ−ルノボラツクフオトレジスト組成物 |
JPS61141441A (ja) * | 1984-12-14 | 1986-06-28 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
US4626492A (en) * | 1985-06-04 | 1986-12-02 | Olin Hunt Specialty Products, Inc. | Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound |
JPS62123444A (ja) * | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
JPS63184745A (ja) * | 1987-01-27 | 1988-07-30 | Sumitomo Chem Co Ltd | ポジ型フオトレジスト組成物 |
-
1989
- 1989-03-13 NO NO89891062A patent/NO891062L/no unknown
- 1989-03-14 AU AU31276/89A patent/AU3127689A/en not_active Abandoned
- 1989-03-16 IL IL89632A patent/IL89632A/xx unknown
- 1989-03-22 DE DE89302865T patent/DE68909084T2/de not_active Expired - Fee Related
- 1989-03-22 EP EP19890302865 patent/EP0336605B1/de not_active Expired - Lifetime
- 1989-03-30 DK DK155289A patent/DK155289A/da not_active IP Right Cessation
- 1989-03-31 JP JP1078688A patent/JPH0778627B2/ja not_active Expired - Fee Related
- 1989-03-31 KR KR1019890004297A patent/KR940001550B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR900003680A (ko) | 1990-03-26 |
AU3127689A (en) | 1989-10-05 |
KR940001550B1 (ko) | 1994-02-24 |
IL89632A (en) | 1993-01-31 |
EP0336605A3 (en) | 1990-07-25 |
JPH0778627B2 (ja) | 1995-08-23 |
EP0336605B1 (de) | 1993-09-15 |
NO891062L (no) | 1989-10-02 |
EP0336605A2 (de) | 1989-10-11 |
IL89632A0 (en) | 1989-09-10 |
NO891062D0 (no) | 1989-03-13 |
DK155289A (da) | 1989-10-01 |
DE68909084D1 (de) | 1993-10-21 |
DK155289D0 (da) | 1989-03-30 |
JPH0210348A (ja) | 1990-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8380 | Miscellaneous part iii |
Free format text: DER PATENTINHABER LAUTET RICHTIG: HOECHST CELANESE CORP., SHORT HILLS, N.J., US |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: CLARIANT FINANCE (BVI) LTD., ROAD TOWN, TORTOLA, V |
|
8328 | Change in the person/name/address of the agent |
Free format text: SPOTT WEINMILLER & PARTNER, 80336 MUENCHEN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU |
|
8339 | Ceased/non-payment of the annual fee |