DE69501302T2 - Fotoempfindliche Harzzusammensetzung und Verfahren zur Herstellung von Fotoresistmustern - Google Patents

Fotoempfindliche Harzzusammensetzung und Verfahren zur Herstellung von Fotoresistmustern

Info

Publication number
DE69501302T2
DE69501302T2 DE69501302T DE69501302T DE69501302T2 DE 69501302 T2 DE69501302 T2 DE 69501302T2 DE 69501302 T DE69501302 T DE 69501302T DE 69501302 T DE69501302 T DE 69501302T DE 69501302 T2 DE69501302 T2 DE 69501302T2
Authority
DE
Germany
Prior art keywords
resin composition
photosensitive resin
photoresist patterns
producing photoresist
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69501302T
Other languages
English (en)
Other versions
DE69501302D1 (de
Inventor
Mineo Nishi
Koji Nakano
Makoto Ikemoto
Tadashi Kusumoto
Yasuhiro Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Application granted granted Critical
Publication of DE69501302D1 publication Critical patent/DE69501302D1/de
Publication of DE69501302T2 publication Critical patent/DE69501302T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69501302T 1994-09-07 1995-09-05 Fotoempfindliche Harzzusammensetzung und Verfahren zur Herstellung von Fotoresistmustern Expired - Fee Related DE69501302T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21392794 1994-09-07

Publications (2)

Publication Number Publication Date
DE69501302D1 DE69501302D1 (de) 1998-02-05
DE69501302T2 true DE69501302T2 (de) 1998-07-23

Family

ID=16647355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501302T Expired - Fee Related DE69501302T2 (de) 1994-09-07 1995-09-05 Fotoempfindliche Harzzusammensetzung und Verfahren zur Herstellung von Fotoresistmustern

Country Status (5)

Country Link
US (1) US5698362A (de)
EP (1) EP0703498B1 (de)
KR (1) KR100357496B1 (de)
DE (1) DE69501302T2 (de)
TW (1) TW332264B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100466301B1 (ko) * 1996-04-03 2005-09-28 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 포토레지스트조성물
US6852465B2 (en) * 2003-03-21 2005-02-08 Clariant International Ltd. Photoresist composition for imaging thick films
WO2006065261A1 (en) * 2004-12-15 2006-06-22 Anocoil Corporation Improved positive working thermal plates

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2706978B2 (ja) 1988-05-07 1998-01-28 住友化学工業株式会社 ポジ型レジスト組成物
US5456995A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JPH087433B2 (ja) 1989-04-19 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
JP2583364B2 (ja) 1990-06-19 1997-02-19 三菱電機株式会社 感光性樹脂組成物
US5372909A (en) * 1991-09-24 1994-12-13 Mitsubishi Kasei Corporation Photosensitive resin composition comprising an alkali-soluble resin made from a phenolic compound and at least 2 different aldehydes
JP3016231B2 (ja) * 1991-11-15 2000-03-06 ジェイエスアール株式会社 ネガ型レジスト組成物
JP3182823B2 (ja) * 1991-12-27 2001-07-03 住友化学工業株式会社 ポジ型レジスト組成物
JPH05323598A (ja) 1992-05-20 1993-12-07 Hitachi Chem Co Ltd ポジ型ホトレジスト組成物およびレジストパターンの製造法
JPH063544A (ja) 1992-06-23 1994-01-14 Japan Steel Works Ltd:The 光導波路の製造方法
US5279818A (en) * 1992-10-13 1994-01-18 Dow Corning Corporation Permanent waving with silicones
JPH07104473A (ja) 1993-10-05 1995-04-21 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタン形成法

Also Published As

Publication number Publication date
EP0703498B1 (de) 1997-12-29
KR100357496B1 (ko) 2003-03-26
TW332264B (en) 1998-05-21
EP0703498A1 (de) 1996-03-27
DE69501302D1 (de) 1998-02-05
US5698362A (en) 1997-12-16
KR960011555A (ko) 1996-04-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SHIPLEY CO., L.L.C., MARLBOROUGH, MASS., US

8339 Ceased/non-payment of the annual fee