DE3706251C2 - - Google Patents

Info

Publication number
DE3706251C2
DE3706251C2 DE3706251A DE3706251A DE3706251C2 DE 3706251 C2 DE3706251 C2 DE 3706251C2 DE 3706251 A DE3706251 A DE 3706251A DE 3706251 A DE3706251 A DE 3706251A DE 3706251 C2 DE3706251 C2 DE 3706251C2
Authority
DE
Germany
Prior art keywords
signal line
semiconductor device
protective conductor
signal
conductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3706251A
Other languages
German (de)
English (en)
Other versions
DE3706251A1 (de
Inventor
Takahiro Hiratsuka Kanagawa Jp Shirai
Tsunenori Tokio/Tokyo Jp Yoshinari
Kazuhiko Kawasaki Kanagawa Jp Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61044786A external-priority patent/JPS62202572A/ja
Priority claimed from JP61044784A external-priority patent/JPS62202570A/ja
Priority claimed from JP61044785A external-priority patent/JPS62202571A/ja
Priority claimed from JP61044783A external-priority patent/JPS62202569A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3706251A1 publication Critical patent/DE3706251A1/de
Application granted granted Critical
Publication of DE3706251C2 publication Critical patent/DE3706251C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
DE19873706251 1986-02-28 1987-02-26 Halbleitervorrichtung Granted DE3706251A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61044786A JPS62202572A (ja) 1986-02-28 1986-02-28 半導体装置
JP61044784A JPS62202570A (ja) 1986-02-28 1986-02-28 半導体装置
JP61044785A JPS62202571A (ja) 1986-02-28 1986-02-28 半導体装置
JP61044783A JPS62202569A (ja) 1986-02-28 1986-02-28 半導体装置

Publications (2)

Publication Number Publication Date
DE3706251A1 DE3706251A1 (de) 1987-09-03
DE3706251C2 true DE3706251C2 (enExample) 1992-07-09

Family

ID=27461587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873706251 Granted DE3706251A1 (de) 1986-02-28 1987-02-26 Halbleitervorrichtung

Country Status (2)

Country Link
US (1) US5150189A (enExample)
DE (1) DE3706251A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3633182C2 (de) * 1986-09-30 1997-09-11 Heimann Optoelectronics Gmbh Optische Sensoranordnung
FR2638896B1 (fr) * 1988-11-08 1990-12-21 Bull Sa Boitier de circuit integre de haute densite, support de circuit integre et carte d'interconnexion en resultant
DE19634135C2 (de) * 1996-08-23 1998-07-02 Siemens Ag Halbleiterschaltung, insbesondere zur Verwendung in einem integrierten Baustein
JP3201276B2 (ja) * 1996-09-10 2001-08-20 日本電気株式会社 信号伝送回路
US5811882A (en) * 1996-09-24 1998-09-22 Philips Electronics North America Corporation On-chip shielding coaxial conductors for mixed-signal IC
JP3922239B2 (ja) * 2002-12-26 2007-05-30 株式会社デンソー ガス濃度検出装置
JP2004317268A (ja) * 2003-04-16 2004-11-11 Hitachi Ltd 車載電子装置，熱式流量計及び電子回路基板
AT502716B1 (de) * 2005-11-09 2007-10-15 Robert Swoboda Struktur und schaltung zur vermeidung des einflusses der parasitären kapazitiven substrat- kopplung von integrierten widerständen

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606164A (enExample) * 1966-05-06 1967-11-07
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
JPS5627962A (en) * 1979-08-15 1981-03-18 Matsushita Electric Ind Co Ltd Integrated circuit device
JPS56125868A (en) * 1980-03-07 1981-10-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin-film semiconductor device
JPS5846178B2 (ja) * 1980-12-03 1983-10-14 富士通株式会社 半導体装置
JPS57104243A (en) * 1980-12-20 1982-06-29 Toshiba Corp Semiconductor device
JPS5884455A (ja) * 1981-11-13 1983-05-20 Fujitsu Ltd 半導体記憶装置
JPS5994849A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体集積回路装置
JPS60134440A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体集積回路装置
JPS60187038A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 多層配線構造
JPS60224246A (ja) * 1984-04-20 1985-11-08 Fujitsu Ltd 半導体装置
JPS60224244A (ja) * 1984-04-20 1985-11-08 Hitachi Micro Comput Eng Ltd 半導体装置
JPS616868A (ja) * 1984-06-20 1986-01-13 Nec Corp Ｍｉｓ型電界効果半導体装置
US4805138A (en) * 1985-08-23 1989-02-14 Texas Instruments Incorporated An unerasable eprom cell
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices

Also Published As

Publication number Publication date
US5150189A (en) 1992-09-22
DE3706251A1 (de) 1987-09-03

Similar Documents

Publication Publication Date Title
DE19807569C2 (de) Zweirichtungs-Thyristor-Vorrichtung
DE3687921T2 (de) Halbleiteranordnung mit hohem widerstand gegen elektrostatische und elektromagnetische induktion.
DE2854901A1 (de) Konstantspannungsgenerator zum erzeugen einer konstantspannung mit vorgegebenem temperaturkoeffizienten
DE2645408C2 (de) Schaltungsanordnung zum Vergleich von Strahlungsintensitäten
DE69216329T2 (de) Optische Halbleitervorrichtung mit einem Halbleiterlaser und einem Photodetektor
DE3706251C2 (enExample)
DE2803203A1 (de) Phototransistor
DE102020003681A1 (de) Temperatur- und ungleichförmigkeitskompensations-schaltungsanordnung für einen silicium-photomultiplier
DE3635137C2 (enExample)
DE2922301C2 (de) Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
DE2310724B2 (de) Phototransistor
DE69408555T2 (de) Optoelektronische integrierte Schaltung
DE19754462B4 (de) Halbleitervorrichtungen
DE3345045A1 (de) Verstaerker
DE69623265T2 (de) Emitterballast ueberbrueckung für radiofrequenz-leistungstransistoren
DE112013006034T5 (de) Optischer Sensor
DE1808406C3 (de) Strahlungsdetektor und Verfahren zu seiner Herstellung
DE69219687T2 (de) Optoelektronische integrierte Schaltung
DE4017992A1 (de) Transistor mit strommessfunktion
DE2330785A1 (de) Photodetektor-entzerrer
DE1514830B2 (de) Optoelektronische, integrierte halbleiterschaltung
DE2732040A1 (de) Fotodetektor-schaltungsanordnung
DE112018005789T5 (de) Esd-geschützter halbleiter-photomultiplikator
DE10215414A1 (de) Lichtempfindliche Halbleiterdiodenanordnung mit passiver Anpassungsschaltung
DE3244812A1 (de) Verfahren und einrichtung zur vorspannung von fotoleiterdetektoren

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: TIEDTKE, H., DIPL.-ING. BUEHLING, G., DIPL.-CHEM.

D2 Grant after examination
8364 No opposition during term of opposition