DE3689179D1 - Verfahren zur Herstellung von ätzresistenten Schutzlacken durch bevorzugtes Eindringen. - Google Patents

Verfahren zur Herstellung von ätzresistenten Schutzlacken durch bevorzugtes Eindringen.

Info

Publication number
DE3689179D1
DE3689179D1 DE86107186T DE3689179T DE3689179D1 DE 3689179 D1 DE3689179 D1 DE 3689179D1 DE 86107186 T DE86107186 T DE 86107186T DE 3689179 T DE3689179 T DE 3689179T DE 3689179 D1 DE3689179 D1 DE 3689179D1
Authority
DE
Germany
Prior art keywords
etch
production
resistant protective
protective lacquers
preferential penetration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86107186T
Other languages
English (en)
Other versions
DE3689179T2 (de
Inventor
Kaolin Chiong
Bea-Jane Lin Yang
Jer-Ming Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3689179D1 publication Critical patent/DE3689179D1/de
Publication of DE3689179T2 publication Critical patent/DE3689179T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
DE86107186T 1985-06-06 1986-05-27 Verfahren zur Herstellung von ätzresistenten Schutzlacken durch bevorzugtes Eindringen. Expired - Fee Related DE3689179T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/741,779 US4613398A (en) 1985-06-06 1985-06-06 Formation of etch-resistant resists through preferential permeation

Publications (2)

Publication Number Publication Date
DE3689179D1 true DE3689179D1 (de) 1993-11-25
DE3689179T2 DE3689179T2 (de) 1994-05-05

Family

ID=24982156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86107186T Expired - Fee Related DE3689179T2 (de) 1985-06-06 1986-05-27 Verfahren zur Herstellung von ätzresistenten Schutzlacken durch bevorzugtes Eindringen.

Country Status (5)

Country Link
US (1) US4613398A (de)
EP (1) EP0204253B1 (de)
JP (1) JPS61284924A (de)
CA (1) CA1251680A (de)
DE (1) DE3689179T2 (de)

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US5166038A (en) * 1989-07-27 1992-11-24 International Business Machines Corporation Etch resistant pattern formation via interfacial silylation process
US5217851A (en) * 1989-09-05 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Pattern forming method capable of providing an excellent pattern of high resolution power and high sensitivity
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US4968552A (en) * 1989-10-13 1990-11-06 International Business Machines Corp. Versatile reactive ion etch barriers from polyamic acid salts
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
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US5275913A (en) * 1990-05-08 1994-01-04 Industrial Technology Research Institute Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching
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EP0759950B1 (de) * 1994-05-19 2000-05-24 Minnesota Mining And Manufacturing Company Polymergegenstand mit verbesserter hydrophiler eigenschaft und verfahren zu seiner herstellung
EP0760971B1 (de) * 1994-05-25 1999-08-04 Siemens Aktiengesellschaft Trockenentwickelbarer positivresist
KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
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US5871871A (en) * 1996-09-20 1999-02-16 International Business Machines Corporation Stabilized multi-layered structure of color filters on a silicon chip and a method for making
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US6610602B2 (en) 1999-06-29 2003-08-26 The Research Foundation Of State University Of New York Magnetic field sensor and method of manufacturing same using a self-organizing polymer mask
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US6547975B1 (en) 1999-10-29 2003-04-15 Unaxis Usa Inc. Magnetic pole fabrication process and device
KR100669752B1 (ko) * 2004-11-10 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치
JPWO2008007550A1 (ja) * 2006-07-14 2009-12-10 コニカミノルタホールディングス株式会社 製版方法及び平版印刷版
KR20090125078A (ko) * 2007-01-31 2009-12-03 뉴사우스 이노베이션즈 피티와이 리미티드 선택된 물질에 개구부들을 형성하는 방법
US20090170992A1 (en) * 2007-12-28 2009-07-02 Saint-Gobain Performance Plastics Corporation Etch resistant polymer composition
JP6656733B2 (ja) 2013-08-05 2020-03-04 ツイスト バイオサイエンス コーポレーション 新規合成した遺伝子ライブラリ
US10669304B2 (en) 2015-02-04 2020-06-02 Twist Bioscience Corporation Methods and devices for de novo oligonucleic acid assembly
WO2016126987A1 (en) 2015-02-04 2016-08-11 Twist Bioscience Corporation Compositions and methods for synthetic gene assembly
WO2016172377A1 (en) 2015-04-21 2016-10-27 Twist Bioscience Corporation Devices and methods for oligonucleic acid library synthesis
CN107850860A (zh) * 2015-08-06 2018-03-27 罗门哈斯电子材料有限责任公司 用于形成像素界定层的组合物和方法
JP6982362B2 (ja) 2015-09-18 2021-12-17 ツイスト バイオサイエンス コーポレーション オリゴ核酸変異体ライブラリーとその合成
CN108698012A (zh) 2015-09-22 2018-10-23 特韦斯特生物科学公司 用于核酸合成的柔性基底
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CN110366613A (zh) 2016-12-16 2019-10-22 特韦斯特生物科学公司 免疫突触的变体文库及其合成
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JP6814116B2 (ja) * 2017-09-13 2021-01-13 キオクシア株式会社 半導体装置の製造方法および半導体製造装置
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Also Published As

Publication number Publication date
EP0204253A2 (de) 1986-12-10
JPS61284924A (ja) 1986-12-15
DE3689179T2 (de) 1994-05-05
EP0204253B1 (de) 1993-10-20
US4613398A (en) 1986-09-23
EP0204253A3 (en) 1988-07-27
CA1251680A (en) 1989-03-28

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