DE3688934T2 - Verfahren zur Herstellung eines elektrischen Widerstands mittels Dotierung eines Halbleitermaterials. - Google Patents

Verfahren zur Herstellung eines elektrischen Widerstands mittels Dotierung eines Halbleitermaterials.

Info

Publication number
DE3688934T2
DE3688934T2 DE86402894T DE3688934T DE3688934T2 DE 3688934 T2 DE3688934 T2 DE 3688934T2 DE 86402894 T DE86402894 T DE 86402894T DE 3688934 T DE3688934 T DE 3688934T DE 3688934 T2 DE3688934 T2 DE 3688934T2
Authority
DE
Germany
Prior art keywords
zone
ions
resistance
doping
active ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86402894T
Other languages
German (de)
English (en)
Other versions
DE3688934D1 (de
Inventor
Alain Boudou
Brian Doyle
Jean-Claude Marchetaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SAS
Original Assignee
Bull SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SAS filed Critical Bull SAS
Application granted granted Critical
Publication of DE3688934D1 publication Critical patent/DE3688934D1/de
Publication of DE3688934T2 publication Critical patent/DE3688934T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/025—Manufacture or treatment of resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
DE86402894T 1985-12-27 1986-12-22 Verfahren zur Herstellung eines elektrischen Widerstands mittels Dotierung eines Halbleitermaterials. Expired - Fee Related DE3688934T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8519344A FR2602093B1 (fr) 1985-12-27 1985-12-27 Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant

Publications (2)

Publication Number Publication Date
DE3688934D1 DE3688934D1 (de) 1993-09-30
DE3688934T2 true DE3688934T2 (de) 1993-12-23

Family

ID=9326263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86402894T Expired - Fee Related DE3688934T2 (de) 1985-12-27 1986-12-22 Verfahren zur Herstellung eines elektrischen Widerstands mittels Dotierung eines Halbleitermaterials.

Country Status (5)

Country Link
US (1) US4851359A (enExample)
EP (1) EP0231703B1 (enExample)
JP (1) JPS63169057A (enExample)
DE (1) DE3688934T2 (enExample)
FR (1) FR2602093B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240511A (en) * 1987-02-20 1993-08-31 National Semiconductor Corporation Lightly doped polycrystalline silicon resistor having a non-negative temperature coefficient
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
US5037766A (en) * 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
US5273924A (en) * 1991-08-30 1993-12-28 Micron Technology, Inc. Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region
US5236856A (en) * 1991-08-30 1993-08-17 Micron Technology, Inc. Method for minimizing diffusion of conductivity enhancing impurities from one region of polysilicon layer to another region and a semiconductor device produced according to the method
US5393676A (en) * 1993-09-22 1995-02-28 Advanced Micro Devices, Inc. Method of fabricating semiconductor gate electrode with fluorine migration barrier
JP2012182488A (ja) * 2012-05-25 2012-09-20 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796929A (en) * 1970-12-09 1974-03-12 Philips Nv Junction isolated integrated circuit resistor with crystal damage near isolation junction
US4035925A (en) * 1972-11-08 1977-07-19 The United States Of America As Represented By The Secretary Of Agriculture System for treating particulate material with gaseous media
US3925106A (en) * 1973-12-26 1975-12-09 Ibm Ion bombardment method of producing integrated semiconductor circuit resistors of low temperature coefficient of resistance
JPS5240986A (en) * 1975-09-27 1977-03-30 Toshiba Corp Process for production of semiconductor element
JPS587065B2 (ja) * 1976-08-26 1983-02-08 日本電信電話株式会社 高抵抗層を有する半導体装置及びその製造方法
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
JPS54122973A (en) * 1978-03-16 1979-09-22 Fujitsu Ltd Manufacture for semiconductor device
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4446476A (en) * 1981-06-30 1984-05-01 International Business Machines Corporation Integrated circuit having a sublayer electrical contact and fabrication thereof
JPS5856417A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2602093B1 (fr) 1988-10-14
EP0231703A1 (fr) 1987-08-12
EP0231703B1 (fr) 1993-08-25
JPH0558672B2 (enExample) 1993-08-27
US4851359A (en) 1989-07-25
JPS63169057A (ja) 1988-07-13
FR2602093A1 (fr) 1988-01-29
DE3688934D1 (de) 1993-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee