DE69517953T2 - Verfahren zur herstellung eines widerstands - Google Patents

Verfahren zur herstellung eines widerstands

Info

Publication number
DE69517953T2
DE69517953T2 DE69517953T DE69517953T DE69517953T2 DE 69517953 T2 DE69517953 T2 DE 69517953T2 DE 69517953 T DE69517953 T DE 69517953T DE 69517953 T DE69517953 T DE 69517953T DE 69517953 T2 DE69517953 T2 DE 69517953T2
Authority
DE
Germany
Prior art keywords
producing
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517953T
Other languages
English (en)
Other versions
DE69517953D1 (de
Inventor
J Alter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Micrel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micrel Inc filed Critical Micrel Inc
Publication of DE69517953D1 publication Critical patent/DE69517953D1/de
Application granted granted Critical
Publication of DE69517953T2 publication Critical patent/DE69517953T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
DE69517953T 1994-01-12 1995-01-05 Verfahren zur herstellung eines widerstands Expired - Fee Related DE69517953T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/180,579 US5439841A (en) 1994-01-12 1994-01-12 High value gate leakage resistor
PCT/US1995/000073 WO1995019649A1 (en) 1994-01-12 1995-01-05 High value gate leakage resistor

Publications (2)

Publication Number Publication Date
DE69517953D1 DE69517953D1 (de) 2000-08-17
DE69517953T2 true DE69517953T2 (de) 2000-12-07

Family

ID=22660975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517953T Expired - Fee Related DE69517953T2 (de) 1994-01-12 1995-01-05 Verfahren zur herstellung eines widerstands

Country Status (7)

Country Link
US (2) US5439841A (de)
EP (1) EP0739538B1 (de)
JP (1) JPH10505461A (de)
AU (1) AU1448495A (de)
DE (1) DE69517953T2 (de)
HK (1) HK1014086A1 (de)
WO (1) WO1995019649A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3124473B2 (ja) * 1994-08-19 2001-01-15 セイコーインスツルメンツ株式会社 半導体装置とその製造方法
DE19507802C1 (de) * 1995-03-06 1996-05-30 Siemens Ag Verfahren zum Herstellen eines integrierten Widerstandes
US5712173A (en) * 1996-01-24 1998-01-27 Advanced Micro Devices, Inc. Method of making semiconductor device with self-aligned insulator
US5679593A (en) * 1996-02-01 1997-10-21 Micron Technology, Inc. Method of fabricating a high resistance integrated circuit resistor
JPH10144928A (ja) * 1996-11-08 1998-05-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6018272A (en) * 1997-01-02 2000-01-25 Lucent Technologies Inc. Linearization of resistance
US6693783B2 (en) * 2002-04-08 2004-02-17 Exar Corporation Bounce tolerant fuse trimming circuit with controlled timing
JP4199476B2 (ja) * 2002-04-12 2008-12-17 株式会社ルネサステクノロジ 半導体装置の保護回路
US6858238B2 (en) * 2002-06-26 2005-02-22 Wm. Wrigley Jr. Company Chewing gum products including prolamine blends
US6975261B1 (en) * 2004-07-28 2005-12-13 Intersil America's Inc. High accuracy digital to analog converter using parallel P and N type resistor ladders
KR100672939B1 (ko) * 2004-07-29 2007-01-24 삼성전자주식회사 저항 소자를 구비하는 반도체 소자 및 그 형성 방법
DE102004061908B4 (de) * 2004-12-22 2009-07-30 Siemens Ag Verfahren zum Herstellen einer Schaltungsanordnung auf einem Substrat
JP4626513B2 (ja) * 2005-12-28 2011-02-09 株式会社デンソー ドライバ用半導体素子の過電流保護装置
RU2531381C1 (ru) * 2013-10-18 2014-10-20 Федеральное государственное унитарное предприятие "Всероссийский электротехнический институт имени В.И. Ленина" Мощный полупроводниковый резистор и способ его изготовления

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474304A (en) * 1968-01-03 1969-10-21 Corning Glass Works Monolithic thin-film devices with active and resistive regions
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
US4092735A (en) * 1976-12-27 1978-05-30 Texas Instruments Incorporated Static memory cell using field implanted resistance
US4070653A (en) * 1976-06-29 1978-01-24 Texas Instruments Incorporated Random access memory cell with ion implanted resistor element
US4208781A (en) * 1976-09-27 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4352997A (en) * 1977-05-31 1982-10-05 Texas Instruments Incorporated Static MOS memory cell using inverted N-channel field-effect transistor
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
US4830976A (en) * 1984-10-01 1989-05-16 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated circuit resistor
US4645948A (en) * 1984-10-01 1987-02-24 At&T Bell Laboratories Field effect transistor current source
JPH0638468B2 (ja) * 1984-12-18 1994-05-18 三洋電機株式会社 半導体集積回路装置
US4987093A (en) * 1987-04-15 1991-01-22 Texas Instruments Incorporated Through-field implant isolated devices and method
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
US4769589A (en) * 1987-11-04 1988-09-06 Teledyne Industries, Inc. Low-voltage, temperature compensated constant current and voltage reference circuit
JPH02114533A (ja) * 1988-10-24 1990-04-26 Nec Corp 半導体装置
US5304502A (en) * 1988-11-08 1994-04-19 Yamaha Corporation Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor
US4896243A (en) * 1988-12-20 1990-01-23 Texas Instruments Incorporated Efficient ESD input protection scheme
EP0377871A3 (de) * 1989-01-09 1991-03-27 Texas Instruments Incorporated Selbstjustierendes Fenster aus einem zurückgesetzten Kreuzungspunkt von isolierenden Bereichen
US5334550A (en) * 1989-01-09 1994-08-02 Texas Instruments Incorporated Method of producing a self-aligned window at recessed intersection of insulating regions
US5227327A (en) * 1989-11-10 1993-07-13 Seiko Epson Corporation Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits
JPH03238868A (ja) * 1990-02-15 1991-10-24 Nec Corp 縦型電界効果トランジスタ
US5134088A (en) * 1990-04-27 1992-07-28 Digital Equipment Corporation Precision resistor in self-aligned silicided mos process
US5081439A (en) * 1990-11-16 1992-01-14 International Business Machines Corporation Thin film resistor and method for producing same
US5323045A (en) * 1991-03-30 1994-06-21 Nippon Steel Corporation Semiconductor SRAM with low resistance power line
US5241206A (en) * 1991-07-03 1993-08-31 Micron Technology, Inc. Self-aligned vertical intrinsic resistance
FR2681978B1 (fr) * 1991-09-26 1993-12-24 Sgs Thomson Microelectronics Sa Resistance de precision et procede de fabrication.

Also Published As

Publication number Publication date
DE69517953D1 (de) 2000-08-17
US5589702A (en) 1996-12-31
AU1448495A (en) 1995-08-01
HK1014086A1 (en) 1999-09-17
JPH10505461A (ja) 1998-05-26
EP0739538A4 (de) 1997-08-13
EP0739538A1 (de) 1996-10-30
US5439841A (en) 1995-08-08
EP0739538B1 (de) 2000-07-12
WO1995019649A1 (en) 1995-07-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee