DE69522992D1 - Verfahren zur Herstellung eines Widerstands - Google Patents

Verfahren zur Herstellung eines Widerstands

Info

Publication number
DE69522992D1
DE69522992D1 DE69522992T DE69522992T DE69522992D1 DE 69522992 D1 DE69522992 D1 DE 69522992D1 DE 69522992 T DE69522992 T DE 69522992T DE 69522992 T DE69522992 T DE 69522992T DE 69522992 D1 DE69522992 D1 DE 69522992D1
Authority
DE
Germany
Prior art keywords
resistor
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69522992T
Other languages
English (en)
Other versions
DE69522992T2 (de
Inventor
Robert H Eklund
David B Scott
Douglas A Prinslow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69522992D1 publication Critical patent/DE69522992D1/de
Application granted granted Critical
Publication of DE69522992T2 publication Critical patent/DE69522992T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
DE69522992T 1994-05-06 1995-05-04 Verfahren zur Herstellung eines Widerstands Expired - Lifetime DE69522992T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23902094A 1994-05-06 1994-05-06

Publications (2)

Publication Number Publication Date
DE69522992D1 true DE69522992D1 (de) 2001-11-08
DE69522992T2 DE69522992T2 (de) 2002-04-25

Family

ID=22900272

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69522992T Expired - Lifetime DE69522992T2 (de) 1994-05-06 1995-05-04 Verfahren zur Herstellung eines Widerstands

Country Status (6)

Country Link
US (1) US5656524A (de)
EP (1) EP0681320B1 (de)
JP (1) JPH0846139A (de)
KR (1) KR950034754A (de)
DE (1) DE69522992T2 (de)
TW (1) TW284913B (de)

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TW297158B (de) 1994-05-27 1997-02-01 Hitachi Ltd
US6001663A (en) * 1995-06-07 1999-12-14 Advanced Micro Devices, Inc. Apparatus for detecting defect sizes in polysilicon and source-drain semiconductor devices and method for making the same
US5670891A (en) * 1995-06-07 1997-09-23 Advanced Micro Devices, Inc. Structures to extract defect size information of poly and source-drain semiconductor devices and method for making the same
US6236101B1 (en) * 1997-11-05 2001-05-22 Texas Instruments Incorporated Metallization outside protective overcoat for improved capacitors and inductors
KR100257079B1 (ko) * 1997-12-05 2000-05-15 김영환 반도체소자 및 이의 제조방법
US6165861A (en) * 1998-09-14 2000-12-26 Taiwan Semiconductor Manufacturing Company Integrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusion
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US6586311B2 (en) * 2001-04-25 2003-07-01 Advanced Micro Devices, Inc. Salicide block for silicon-on-insulator (SOI) applications
US6727133B1 (en) * 2002-11-21 2004-04-27 Texas Instruments Incorporated Integrated circuit resistors in a high performance CMOS process
US6933546B2 (en) 2003-03-17 2005-08-23 Freescale Semiconductor, Inc. Semiconductor component
US6900502B2 (en) 2003-04-03 2005-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel on insulator device
US6882025B2 (en) * 2003-04-25 2005-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Strained-channel transistor and methods of manufacture
US6867433B2 (en) 2003-04-30 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
JP2004342821A (ja) * 2003-05-15 2004-12-02 Renesas Technology Corp 半導体装置
US20050012087A1 (en) * 2003-07-15 2005-01-20 Yi-Ming Sheu Self-aligned MOSFET having an oxide region below the channel
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
US6936881B2 (en) * 2003-07-25 2005-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor that includes high permittivity capacitor dielectric
US6940705B2 (en) 2003-07-25 2005-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor with enhanced performance and method of manufacture
US7101742B2 (en) 2003-08-12 2006-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel complementary field-effect transistors and methods of manufacture
US20050035410A1 (en) * 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US20050035369A1 (en) * 2003-08-15 2005-02-17 Chun-Chieh Lin Structure and method of forming integrated circuits utilizing strained channel transistors
US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US7071052B2 (en) * 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US7112535B2 (en) * 2003-09-30 2006-09-26 International Business Machines Corporation Precision polysilicon resistor process
US7888201B2 (en) 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
US6806136B1 (en) * 2004-02-17 2004-10-19 Episil Technologies, Inc. Method of forming a semiconductor device having a capacitor and a resistor
KR100556350B1 (ko) * 2004-05-10 2006-03-03 동부아남반도체 주식회사 반도체 소자 및 그 제조방법
US7034364B2 (en) * 2004-05-25 2006-04-25 Texas Instruments Incorporated Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection
US7060612B2 (en) * 2004-08-26 2006-06-13 International Business Machines Corporation Method of adjusting resistors post silicide process
US20060057813A1 (en) * 2004-09-15 2006-03-16 Cheng-Hsiung Chen Method of forming a polysilicon resistor
US7285472B2 (en) * 2005-01-27 2007-10-23 International Business Machines Corporation Low tolerance polysilicon resistor for low temperature silicide processing
US7241663B2 (en) * 2005-04-19 2007-07-10 Texas Instruments Incorporated Maskless multiple sheet polysilicon resistor
US20070096260A1 (en) * 2005-10-28 2007-05-03 International Business Machines Corporation Reduced parasitic and high value resistor and method of manufacture
US7645660B2 (en) * 2005-12-21 2010-01-12 Stmicroelectronics, Inc. Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate
JP5011376B2 (ja) * 2006-04-21 2012-08-29 エヌエックスピー ビー ヴィ 抵抗分割回路を具える集積回路およびその製造方法
US7393701B2 (en) * 2006-12-05 2008-07-01 International Business Machines Corporation Method of adjusting buried resistor resistance
US8558278B2 (en) 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
US7973552B2 (en) * 2007-12-04 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. On-die terminators formed of coarse and fine resistors
US7943961B2 (en) 2008-03-13 2011-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strain bars in stressed layers of MOS devices
US7785979B2 (en) * 2008-07-15 2010-08-31 International Business Machines Corporation Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same
US8242876B2 (en) 2008-09-17 2012-08-14 Stmicroelectronics, Inc. Dual thin film precision resistance trimming
US7808051B2 (en) 2008-09-29 2010-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell without OD space effect in Y-direction
US20100164001A1 (en) * 2008-12-30 2010-07-01 Joodong Park Implant process for blocked salicide poly resistor and structures formed thereby
US8400257B2 (en) 2010-08-24 2013-03-19 Stmicroelectronics Pte Ltd Via-less thin film resistor with a dielectric cap
US8436426B2 (en) 2010-08-24 2013-05-07 Stmicroelectronics Pte Ltd. Multi-layer via-less thin film resistor
US8659085B2 (en) 2010-08-24 2014-02-25 Stmicroelectronics Pte Ltd. Lateral connection for a via-less thin film resistor
US8927909B2 (en) 2010-10-11 2015-01-06 Stmicroelectronics, Inc. Closed loop temperature controlled circuit to improve device stability
US9159413B2 (en) 2010-12-29 2015-10-13 Stmicroelectronics Pte Ltd. Thermo programmable resistor based ROM
US8809861B2 (en) 2010-12-29 2014-08-19 Stmicroelectronics Pte Ltd. Thin film metal-dielectric-metal transistor
JP5850671B2 (ja) * 2011-08-15 2016-02-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8981527B2 (en) * 2011-08-23 2015-03-17 United Microelectronics Corp. Resistor and manufacturing method thereof
US8526214B2 (en) 2011-11-15 2013-09-03 Stmicroelectronics Pte Ltd. Resistor thin film MTP memory
US10229966B2 (en) 2016-12-30 2019-03-12 Texas Instruments Incorporated Semiconductor resistor structure and method for making

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US3864817A (en) * 1972-06-26 1975-02-11 Sprague Electric Co Method of making capacitor and resistor for monolithic integrated circuits
US4021789A (en) * 1975-09-29 1977-05-03 International Business Machines Corporation Self-aligned integrated circuits
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
US4466179A (en) * 1982-10-19 1984-08-21 Harris Corporation Method for providing polysilicon thin films of improved uniformity
US5010032A (en) * 1985-05-01 1991-04-23 Texas Instruments Incorporated Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects
JP3024143B2 (ja) * 1989-06-19 2000-03-21 ソニー株式会社 半導体装置の製法
US5135882A (en) * 1989-07-31 1992-08-04 Micron Technology, Inc. Technique for forming high-value inter-nodal coupling resistance for rad-hard applications in a double-poly, salicide process using local interconnect
US5079177A (en) * 1989-09-19 1992-01-07 National Semiconductor Corporation Process for fabricating high performance bicmos circuits
JP3082923B2 (ja) * 1989-12-26 2000-09-04 ソニー株式会社 半導体装置の製法
US5231042A (en) * 1990-04-02 1993-07-27 National Semiconductor Corporation Formation of silicide contacts using a sidewall oxide process
US5169794A (en) * 1991-03-22 1992-12-08 National Semiconductor Corporation Method of fabrication of pnp structure in a common substrate containing npn or MOS structures
US5285102A (en) * 1991-07-25 1994-02-08 Texas Instruments Incorporated Method of forming a planarized insulation layer
US5182627A (en) * 1991-09-30 1993-01-26 Sgs-Thomson Microelectronics, Inc. Interconnect and resistor for integrated circuits
US5236857A (en) * 1991-10-30 1993-08-17 Texas Instruments Incorporated Resistor structure and process
DE69222393T2 (de) * 1991-11-08 1998-04-02 Nec Corp Verfahren zur Herstellung einer Halbleiteranordnung mit einer Widerstandsschicht aus polykristallinem Silizium
US5384278A (en) * 1992-11-16 1995-01-24 United Technologies Corporation Tight control of resistor valves in a SRAM process
US5395783A (en) * 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
US5424239A (en) * 1994-02-01 1995-06-13 Texas Instruments Incorporated Method of fabricating precisely matched polysilicon resistors

Also Published As

Publication number Publication date
KR950034754A (ko) 1995-12-28
JPH0846139A (ja) 1996-02-16
EP0681320A1 (de) 1995-11-08
TW284913B (de) 1996-09-01
EP0681320B1 (de) 2001-10-04
DE69522992T2 (de) 2002-04-25
US5656524A (en) 1997-08-12

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Legal Events

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8364 No opposition during term of opposition