DE3686548T2 - Verfahren zur herstellung von scheiben. - Google Patents

Verfahren zur herstellung von scheiben.

Info

Publication number
DE3686548T2
DE3686548T2 DE8686114697T DE3686548T DE3686548T2 DE 3686548 T2 DE3686548 T2 DE 3686548T2 DE 8686114697 T DE8686114697 T DE 8686114697T DE 3686548 T DE3686548 T DE 3686548T DE 3686548 T2 DE3686548 T2 DE 3686548T2
Authority
DE
Germany
Prior art keywords
flat surface
flat
cutting
base material
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE8686114697T
Other languages
German (de)
English (en)
Other versions
DE3686548D1 (de
Inventor
Yuichi Saitou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17007406&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3686548(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Materials Silicon Corp, Mitsubishi Materials Corp filed Critical Mitsubishi Materials Silicon Corp
Application granted granted Critical
Publication of DE3686548D1 publication Critical patent/DE3686548D1/de
Publication of DE3686548T2 publication Critical patent/DE3686548T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
DE8686114697T 1985-10-23 1986-10-23 Verfahren zur herstellung von scheiben. Revoked DE3686548T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60236899A JPS6296400A (ja) 1985-10-23 1985-10-23 ウエハの製造方法

Publications (2)

Publication Number Publication Date
DE3686548D1 DE3686548D1 (de) 1992-10-01
DE3686548T2 true DE3686548T2 (de) 1993-03-11

Family

ID=17007406

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686114697T Revoked DE3686548T2 (de) 1985-10-23 1986-10-23 Verfahren zur herstellung von scheiben.

Country Status (5)

Country Link
US (1) US4756796A (OSRAM)
EP (1) EP0221454B1 (OSRAM)
JP (1) JPS6296400A (OSRAM)
CN (1) CN86107119A (OSRAM)
DE (1) DE3686548T2 (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1229640B (it) * 1987-06-29 1991-09-04 S G S Microelettronica S P A O Processo di conformazione del bordo di fette di materiale semiconduttore e relativa apparecchiatura
DE3884903T2 (de) * 1987-10-29 1994-02-10 Tokyo Seimitsu Co Ltd Vorrichtung und Verfahren zum Abschneiden einer Halbleiterscheibe.
DE3737540C1 (de) * 1987-11-05 1989-06-22 Mueller Georg Nuernberg Verfahren und Maschine zum Herstellen von Ronden mit zumindest einer planen Oberflaeche
JPH0767692B2 (ja) * 1989-09-07 1995-07-26 株式会社東京精密 スライシングマシンの切断方法
US5189843A (en) * 1990-08-30 1993-03-02 Silicon Technology Corporation Wafer slicing and grinding machine and a method of slicing and grinding wafers
DE4134110A1 (de) * 1991-10-15 1993-04-22 Wacker Chemitronic Verfahren zum rotationssaegen sproedharter werkstoffe, insbesondere solcher mit durchmessern ueber 200 mm in duenne scheiben vermittels innenlochsaege und vorrichtung zur durchfuehrung des verfahrens
JPH05259016A (ja) * 1992-03-12 1993-10-08 Mitsubishi Electric Corp ウエハ作製用基板及び半導体ウエハの製造方法
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
WO2001046489A1 (en) 1999-12-21 2001-06-28 Trustees Of Boston University Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
JP2002231665A (ja) * 2001-02-06 2002-08-16 Sumitomo Metal Ind Ltd エピタキシャル膜付き半導体ウエーハの製造方法
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
US7708251B2 (en) * 2006-03-17 2010-05-04 Nautilus, Inc. Mechanism and method for adjusting seat height for exercise equipment
EP2094439A2 (en) 2006-12-28 2009-09-02 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
CA2673660C (en) 2006-12-28 2012-07-24 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
KR20160137681A (ko) 2006-12-28 2016-11-30 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 사파이어 기판
US20100037933A1 (en) 2008-08-12 2010-02-18 Harold John Hovel Solar cell panels and method of fabricating same
CN102808213A (zh) * 2012-08-21 2012-12-05 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶大面积晶种制备方法
CN110453288A (zh) * 2018-05-08 2019-11-15 安徽科瑞思创晶体材料有限责任公司 一种消除晶体切割应力的化学腐蚀工艺
CN110227973B (zh) * 2019-07-09 2021-04-23 泰州左岸信息科技有限公司 一种性能稳定的玻璃打孔设备
JP7443053B2 (ja) * 2019-12-26 2024-03-05 株式会社ディスコ レーザー加工装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2382257A (en) * 1943-04-21 1945-08-14 Albert Ramsay Manufacture of piezoelectric oscillator blanks
US2886026A (en) * 1957-08-20 1959-05-12 Texas Instruments Inc Method of and apparatus for cutting a semiconductor crystal
US4084354A (en) * 1977-06-03 1978-04-18 International Business Machines Corporation Process for slicing boules of single crystal material
JPS54110783A (en) * 1978-02-20 1979-08-30 Hitachi Ltd Semiconductor substrate and its manufacture
US4228578A (en) * 1979-01-15 1980-10-21 Monsanto Company Method for off-orientation point rotation sawing of crystalline rod material
US4261781A (en) * 1979-01-31 1981-04-14 International Business Machines Corporation Process for forming compound semiconductor bodies
JPS58173609A (ja) * 1982-04-05 1983-10-12 株式会社東芝 薄片切断装置
JPS58179609A (ja) * 1982-04-14 1983-10-20 株式会社東芝 薄片切断装置
US4465550A (en) * 1982-06-16 1984-08-14 General Signal Corporation Method and apparatus for slicing semiconductor ingots
US4554717A (en) * 1983-12-08 1985-11-26 The United States Of America As Represented By The Secretary Of The Army Method of making miniature high frequency SC-cut quartz crystal resonators
JPS61106207A (ja) * 1984-10-31 1986-05-24 株式会社東京精密 ウエハー製造方法並びに装置
JPS61114813A (ja) * 1984-11-09 1986-06-02 日立精工株式会社 切断方法

Also Published As

Publication number Publication date
US4756796A (en) 1988-07-12
JPS6296400A (ja) 1987-05-02
CN86107119A (zh) 1987-04-29
EP0221454A1 (en) 1987-05-13
DE3686548D1 (de) 1992-10-01
JPH0429640B2 (OSRAM) 1992-05-19
EP0221454B1 (en) 1992-08-26

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation