DE3677030D1 - Halbleiterspeichervorrichtung. - Google Patents

Halbleiterspeichervorrichtung.

Info

Publication number
DE3677030D1
DE3677030D1 DE8686103362T DE3677030T DE3677030D1 DE 3677030 D1 DE3677030 D1 DE 3677030D1 DE 8686103362 T DE8686103362 T DE 8686103362T DE 3677030 T DE3677030 T DE 3677030T DE 3677030 D1 DE3677030 D1 DE 3677030D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686103362T
Other languages
English (en)
Inventor
Hillside Heights Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60049972A external-priority patent/JPS61208255A/ja
Priority claimed from JP60085989A external-priority patent/JPS61244061A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3677030D1 publication Critical patent/DE3677030D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
DE8686103362T 1985-03-13 1986-03-13 Halbleiterspeichervorrichtung. Expired - Lifetime DE3677030D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60049972A JPS61208255A (ja) 1985-03-13 1985-03-13 半導体記憶装置
JP60085989A JPS61244061A (ja) 1985-04-22 1985-04-22 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3677030D1 true DE3677030D1 (de) 1991-02-28

Family

ID=26390407

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686103362T Expired - Lifetime DE3677030D1 (de) 1985-03-13 1986-03-13 Halbleiterspeichervorrichtung.

Country Status (2)

Country Link
EP (1) EP0194682B1 (de)
DE (1) DE3677030D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2621181B2 (ja) * 1987-06-12 1997-06-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH02177359A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置
US5334547A (en) * 1988-12-27 1994-08-02 Nec Corporation Method of manufacturing a semiconductor memory having an increased cell capacitance in a restricted cell area

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728928A1 (de) * 1977-06-27 1979-01-18 Siemens Ag Ein-transistor-speicherelement
JPS5585054A (en) * 1978-12-22 1980-06-26 Hitachi Ltd Mis semiconductor device and its preparation
JPS5658255A (en) * 1979-10-17 1981-05-21 Oki Electric Ind Co Ltd Mos type semiconductor memory device
JPS602782B2 (ja) * 1982-06-30 1985-01-23 富士通株式会社 半導体記憶装置
JPS59104156A (ja) * 1982-12-07 1984-06-15 Toshiba Corp 多層キヤパシタ

Also Published As

Publication number Publication date
EP0194682B1 (de) 1991-01-23
EP0194682A3 (en) 1986-12-17
EP0194682A2 (de) 1986-09-17

Similar Documents

Publication Publication Date Title
DE3684509D1 (de) Halbleiterspeichergeraet.
DE3681082D1 (de) Halbleiterspeichervorrichtung.
DE3685361D1 (de) Halbleiterspeichervorrichtung.
DE3576433D1 (de) Halbleiterspeichervorrichtung.
DE3584189D1 (de) Halbleiterspeichergeraet.
DE3581773D1 (de) Halbleiterspeichervorrichtung.
DE3650012D1 (de) Halbleitervorrichtung.
DE3688933D1 (de) Speichervorrichtung.
NL189326C (nl) Halfgeleiderinrichting.
DE3688064T2 (de) Halbleitervorrichtung.
DE3686994D1 (de) Halbleiterspeicher.
DE3484514D1 (de) Halbleiterspeichergeraet.
DE3770953D1 (de) Halbleiterspeichervorrichtungen.
DE3484232D1 (de) Halbleiterspeichervorrichtung.
DE68920946T2 (de) Halbleiter-Speichereinrichtung.
DE3587052D1 (de) Halbleiterspeichergeraet.
DE3686933T2 (de) Programmierbares halbleiterspeichergeraet.
DE3680223D1 (de) Halbleiterlaser-vorrichtung.
DE3668484D1 (de) Lagervorrichtung.
DE3882150D1 (de) Halbleiterspeichergeraet.
DE3650379T2 (de) Halbleiterlaservorrichtung.
NL193883B (nl) Geïntegreerde halfgeleiderinrichting.
DE68910415T2 (de) Halbleiter-Speichereinrichtung.
DE3583115D1 (de) Halbleiterspeichervorrichtung.
DE3767735D1 (de) Halbleiterspeichervorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee