DE3624384A1 - Vorrichtung zum entfernen einer photoresistschicht von einem substrat - Google Patents
Vorrichtung zum entfernen einer photoresistschicht von einem substratInfo
- Publication number
- DE3624384A1 DE3624384A1 DE19863624384 DE3624384A DE3624384A1 DE 3624384 A1 DE3624384 A1 DE 3624384A1 DE 19863624384 DE19863624384 DE 19863624384 DE 3624384 A DE3624384 A DE 3624384A DE 3624384 A1 DE3624384 A1 DE 3624384A1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- net
- photoresist layer
- narrow gap
- oxidizing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000007800 oxidant agent Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000012530 fluid Substances 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- -1 sulfuric acid water peroxide Chemical class 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75668885A | 1985-07-19 | 1985-07-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3624384A1 true DE3624384A1 (de) | 1987-01-29 |
| DE3624384C2 DE3624384C2 (enrdf_load_stackoverflow) | 1988-11-10 |
Family
ID=25044626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863624384 Granted DE3624384A1 (de) | 1985-07-19 | 1986-07-18 | Vorrichtung zum entfernen einer photoresistschicht von einem substrat |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0628254B2 (enrdf_load_stackoverflow) |
| DE (1) | DE3624384A1 (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3821093A1 (de) * | 1987-06-26 | 1989-01-12 | Hitachi Ltd | Verfahren und vorrichtung zur behandlung von oberflaechen |
| DE4039853A1 (de) * | 1989-12-13 | 1991-06-20 | Mitsubishi Electric Corp | Vorrichtung und verfahren zur oberflaechenreinigung |
| DE4238586A1 (de) * | 1992-11-16 | 1994-05-19 | Inst Halbleiterphysik Gmbh | Vorrichtung zur Feinstreinigung scheibenförmiger Objekte |
| EP0660190A1 (en) * | 1993-12-23 | 1995-06-28 | Motorola Ltd | Method of removing photo resist |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2588508B2 (ja) * | 1986-05-23 | 1997-03-05 | 日立東京エレクトロニクス株式会社 | 処理装置 |
| JPH06103661B2 (ja) * | 1986-12-25 | 1994-12-14 | 東京エレクトロン株式会社 | アツシング装置 |
| JPS63310118A (ja) * | 1987-06-12 | 1988-12-19 | Ube Ind Ltd | オゾン反応処理方法 |
| JPH01175231A (ja) * | 1987-12-29 | 1989-07-11 | Fujitsu Ltd | アッシング方法 |
| JP2574838B2 (ja) * | 1988-01-18 | 1997-01-22 | 株式会社日立製作所 | Ａｌのスパッタエッチング装置 |
| JPH0713215Y2 (ja) * | 1988-01-19 | 1995-03-29 | 日本電気株式会社 | 半導体のレジストアッシング装置 |
| JP2932275B2 (ja) * | 1988-09-05 | 1999-08-09 | 株式会社日立製作所 | 有機物除去装置 |
| JP2929196B2 (ja) * | 1988-09-13 | 1999-08-03 | 東京エレクトロン株式会社 | 加熱装置 |
| JP2764690B2 (ja) * | 1994-05-20 | 1998-06-11 | 東京エレクトロン株式会社 | アッシング方法及びアッシング装置 |
| JP5987815B2 (ja) * | 2013-12-06 | 2016-09-07 | ウシオ電機株式会社 | アッシング方法およびアッシング装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2063721A1 (de) * | 1969-12-29 | 1971-10-07 | General Electric Company, Schenectady, NY (V St A ) | Entfernung von organischen Poly merfilmen von der Oberflache von Schicht tragern |
| US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612766B2 (ja) * | 1983-03-04 | 1994-02-16 | 株式会社精密エンタプライズ | 光照射装置 |
| US4544446A (en) * | 1984-07-24 | 1985-10-01 | J. T. Baker Chemical Co. | VLSI chemical reactor |
| JPH0691048B2 (ja) * | 1985-05-17 | 1994-11-14 | 日本真空技術株式会社 | 基板乾処理の方法および装置 |
-
1986
- 1986-07-18 JP JP61169658A patent/JPH0628254B2/ja not_active Expired - Fee Related
- 1986-07-18 DE DE19863624384 patent/DE3624384A1/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2063721A1 (de) * | 1969-12-29 | 1971-10-07 | General Electric Company, Schenectady, NY (V St A ) | Entfernung von organischen Poly merfilmen von der Oberflache von Schicht tragern |
| US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3821093A1 (de) * | 1987-06-26 | 1989-01-12 | Hitachi Ltd | Verfahren und vorrichtung zur behandlung von oberflaechen |
| US4936940A (en) * | 1987-06-26 | 1990-06-26 | Hitachi, Ltd. | Equipment for surface treatment |
| DE4039853A1 (de) * | 1989-12-13 | 1991-06-20 | Mitsubishi Electric Corp | Vorrichtung und verfahren zur oberflaechenreinigung |
| DE4238586A1 (de) * | 1992-11-16 | 1994-05-19 | Inst Halbleiterphysik Gmbh | Vorrichtung zur Feinstreinigung scheibenförmiger Objekte |
| EP0660190A1 (en) * | 1993-12-23 | 1995-06-28 | Motorola Ltd | Method of removing photo resist |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62290134A (ja) | 1987-12-17 |
| DE3624384C2 (enrdf_load_stackoverflow) | 1988-11-10 |
| JPH0628254B2 (ja) | 1994-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |