DE3588237D1 - Vorrichtung zum Abtasten von Wafern durch einen Ionenstrahl - Google Patents

Vorrichtung zum Abtasten von Wafern durch einen Ionenstrahl

Info

Publication number
DE3588237D1
DE3588237D1 DE3588237T DE3588237T DE3588237D1 DE 3588237 D1 DE3588237 D1 DE 3588237D1 DE 3588237 T DE3588237 T DE 3588237T DE 3588237 T DE3588237 T DE 3588237T DE 3588237 D1 DE3588237 D1 DE 3588237D1
Authority
DE
Germany
Prior art keywords
ion beam
scanning wafers
wafers
scanning
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3588237T
Other languages
English (en)
Other versions
DE3588237T2 (de
Inventor
Frederick J L Robinson
Michael T Wauk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE3588237D1 publication Critical patent/DE3588237D1/de
Application granted granted Critical
Publication of DE3588237T2 publication Critical patent/DE3588237T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE19853588237 1984-09-19 1985-09-19 Vorrichtung zum Abtasten von Wafern durch einen Ionenstrahl Expired - Fee Related DE3588237T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65202084A 1984-09-19 1984-09-19

Publications (2)

Publication Number Publication Date
DE3588237D1 true DE3588237D1 (de) 2002-04-18
DE3588237T2 DE3588237T2 (de) 2002-11-14

Family

ID=24615199

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19853588237 Expired - Fee Related DE3588237T2 (de) 1984-09-19 1985-09-19 Vorrichtung zum Abtasten von Wafern durch einen Ionenstrahl
DE19853588132 Expired - Fee Related DE3588132T2 (de) 1984-09-19 1985-09-19 Vorrichtung zum Scannen von Wafern

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19853588132 Expired - Fee Related DE3588132T2 (de) 1984-09-19 1985-09-19 Vorrichtung zum Scannen von Wafern

Country Status (3)

Country Link
EP (3) EP0458422B1 (de)
JP (2) JP2507302B2 (de)
DE (2) DE3588237T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324536A (ja) * 1986-01-29 1988-02-01 イ−トン　コ−ポレ−シヨン イオン注入装置および方法
US4724325A (en) * 1986-04-23 1988-02-09 Eaton Corporation Adhesion cooling for an ion implantation system
JPS62272444A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd イオン注入用タ−ゲツト機構
US5040484A (en) * 1987-05-04 1991-08-20 Varian Associates, Inc. Apparatus for retaining wafers
US4817556A (en) * 1987-05-04 1989-04-04 Varian Associates, Inc. Apparatus for retaining wafers
DE68927198T2 (de) * 1988-05-18 1997-01-30 Varian Associates Gerät zur Abrasterung einer Tragplatte in einer Schub-Ionen-Implantierungsanlage
US4965862A (en) * 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US4899059A (en) * 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
JPH0728692Y2 (ja) * 1988-06-25 1995-06-28 日新電機株式会社 ウエハディスク
CS272919B1 (en) * 1988-12-29 1991-02-12 Vladimir Ing Csc Dynda Vacuum chamber for ionic implantation
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
US5003183A (en) * 1989-05-15 1991-03-26 Nissin Electric Company, Limited Ion implantation apparatus and method of controlling the same
JPH077658B2 (ja) * 1989-05-15 1995-01-30 日新電機株式会社 イオン注入装置
GB9324002D0 (en) * 1993-11-22 1994-01-12 Electrotech Ltd Processing system
JP3003088B2 (ja) * 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
EP0686995B1 (de) * 1994-06-10 2002-02-27 Axcelis Technologies, Inc. Ionenimplantierungsgerät
US5525807A (en) * 1995-06-02 1996-06-11 Eaton Corporation Ion implantation device
US5656092A (en) * 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
NL1005011C2 (nl) * 1997-01-15 2001-05-01 Axcelis Technologies Werkwijze en inrichting voor het absorberen en verwijderen van contaminantdeeltjes uit een binnengebied van een ionenimplantatie-inrichting.
GB2327532B (en) * 1997-07-16 2001-12-19 Applied Materials Inc Improved scanning wheel for ion implantation process chamber
JP3064269B2 (ja) * 1998-10-30 2000-07-12 アプライド マテリアルズ インコーポレイテッド イオン注入装置及びイオン注入方法
US6222196B1 (en) * 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
JP2000183139A (ja) 1998-12-17 2000-06-30 Hitachi Ltd イオン注入装置
JP3865349B2 (ja) * 1998-12-21 2007-01-10 アプライド マテリアルズ インコーポレイテッド イオン注入装置のウェハ支持台
GB2347784B (en) * 1999-03-11 2004-02-11 Applied Materials Inc Scanning wheel for ion implantation process chamber
US6398823B1 (en) * 1999-12-07 2002-06-04 Tru-Si Technologies, Inc. Dynamic break for non-contact wafer holder
US6580082B1 (en) * 2000-09-26 2003-06-17 Axcelis Technologies, Inc. System and method for delivering cooling gas from atmospheric pressure to a high vacuum through a rotating seal in a batch ion implanter
US6614190B2 (en) 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
JP2003045371A (ja) * 2001-07-19 2003-02-14 Applied Materials Inc イオン注入装置の基板支持部材およびイオン注入装置
US6734439B2 (en) * 2001-10-25 2004-05-11 Allan Weed Wafer pedestal tilt mechanism and cooling system
DE102005035904B4 (de) * 2005-07-28 2012-01-12 Leybold Optics Gmbh Vorrichtung zum Behandeln von Substraten
US7528392B2 (en) * 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
CN102804328B (zh) * 2009-06-30 2015-09-16 特温克里克技术公司 离子植入装置和方法
US8481969B2 (en) * 2010-06-04 2013-07-09 Axcelis Technologies, Inc. Effective algorithm for warming a twist axis for cold ion implantations
US11942324B2 (en) 2020-06-10 2024-03-26 Applied Materials, Inc. Method for BEOL metal to dielectric adhesion

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135346B2 (de) * 1972-05-16 1976-10-01
JPS5135346A (de) * 1974-09-20 1976-03-25 Hitachi Ltd
US3993018A (en) * 1975-11-12 1976-11-23 International Business Machines Corporation Centrifugal support for workpieces
JPS52123174A (en) * 1976-04-09 1977-10-17 Hitachi Ltd Specimen scanning method for ion implantation
JPS5478091A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Ion implanting unit
US4234797A (en) * 1979-05-23 1980-11-18 Nova Associates, Inc. Treating workpieces with beams
JPS58153535A (ja) * 1982-03-05 1983-09-12 Hitachi Ltd 試料回転装置
JPS59165359A (ja) * 1983-03-11 1984-09-18 Hitachi Ltd イオン打込装置

Also Published As

Publication number Publication date
EP0178803A2 (de) 1986-04-23
EP0458422B1 (de) 1996-12-11
JPS61116746A (ja) 1986-06-04
JPH06111752A (ja) 1994-04-22
EP0458422A3 (en) 1992-08-19
EP0724284B1 (de) 2002-03-13
DE3588237T2 (de) 2002-11-14
JP2507302B2 (ja) 1996-06-12
EP0458422A2 (de) 1991-11-27
JP2573779B2 (ja) 1997-01-22
EP0724284A2 (de) 1996-07-31
EP0178803A3 (de) 1988-07-20
DE3588132D1 (de) 1997-01-23
DE3588132T2 (de) 1997-04-03
EP0724284A3 (de) 1997-05-07

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee