DE3588086D1 - Supraleiteranordnung - Google Patents

Supraleiteranordnung

Info

Publication number
DE3588086D1
DE3588086D1 DE3588086T DE3588086T DE3588086D1 DE 3588086 D1 DE3588086 D1 DE 3588086D1 DE 3588086 T DE3588086 T DE 3588086T DE 3588086 T DE3588086 T DE 3588086T DE 3588086 D1 DE3588086 D1 DE 3588086D1
Authority
DE
Germany
Prior art keywords
superconductor arrangement
superconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3588086T
Other languages
English (en)
Other versions
DE3588086T2 (de
Inventor
Toshikazu Nishino
Mutsuko Miyake
Ushio Kawabe
Yutaka Harada
Masaaki Aoki
Mikio Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59231308A external-priority patent/JPS61110479A/ja
Priority claimed from JP60030366A external-priority patent/JP2568995B2/ja
Priority claimed from JP60034355A external-priority patent/JPS61194884A/ja
Priority claimed from JP60046539A external-priority patent/JPS61206277A/ja
Priority claimed from JP60110371A external-priority patent/JPS61269385A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3588086D1 publication Critical patent/DE3588086D1/de
Application granted granted Critical
Publication of DE3588086T2 publication Critical patent/DE3588086T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
DE3588086T 1984-11-05 1985-11-04 Supraleiteranordnung Expired - Fee Related DE3588086T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP59231308A JPS61110479A (ja) 1984-11-05 1984-11-05 超電導トランジスタの構造
JP60030366A JP2568995B2 (ja) 1985-02-20 1985-02-20 超電導素子
JP60034355A JPS61194884A (ja) 1985-02-25 1985-02-25 超電導素子集積回路
JP60046539A JPS61206277A (ja) 1985-03-11 1985-03-11 超電導トランジスタ
JP60110371A JPS61269385A (ja) 1985-05-24 1985-05-24 超伝導デバイス

Publications (2)

Publication Number Publication Date
DE3588086D1 true DE3588086D1 (de) 1996-04-04
DE3588086T2 DE3588086T2 (de) 1996-09-19

Family

ID=27521216

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3588086T Expired - Fee Related DE3588086T2 (de) 1984-11-05 1985-11-04 Supraleiteranordnung

Country Status (3)

Country Link
US (4) US4884111A (de)
EP (2) EP0667645A1 (de)
DE (1) DE3588086T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0667645A1 (de) * 1984-11-05 1995-08-16 Hitachi, Ltd. Supraleitende Anordnung
US5272358A (en) * 1986-08-13 1993-12-21 Hitachi, Ltd. Superconducting device
EP0257474A3 (de) * 1986-08-13 1989-02-15 Hitachi, Ltd. Supraleitendes Bauelement
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
DE3889263T2 (de) * 1987-08-24 1994-08-11 Semiconductor Energy Lab Elektronische Anordnungen unter Verwendung von supraleitenden Materialien.
EP0327121A3 (de) * 1988-02-05 1990-01-10 Hitachi, Ltd. Supraleitender Feldeffekt-Transistor
JPH07109906B2 (ja) * 1988-03-03 1995-11-22 松下電器産業株式会社 超伝導トランジスタ回路
JPH0298979A (ja) * 1988-10-05 1990-04-11 Sharp Corp 超電導装置
FR2638569B1 (fr) * 1988-10-25 1992-11-20 Seiko Epson Corp Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson
JPH02141569A (ja) * 1988-11-24 1990-05-30 Hitachi Ltd 超伝導材料
US5550389A (en) * 1988-11-28 1996-08-27 Hitachi, Ltd. Superconducting device
FR2674067B1 (fr) * 1991-03-15 1993-05-28 Thomson Csf Dispositif semiconducteur a effet josephson.
US5686317A (en) * 1991-06-04 1997-11-11 Micron Technology, Inc. Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die
JP2773487B2 (ja) * 1991-10-15 1998-07-09 日本電気株式会社 トンネルトランジスタ
US5250454A (en) * 1992-12-10 1993-10-05 Allied Signal Inc. Method for forming thickened source/drain contact regions for field effect transistors
ATE172579T1 (de) * 1994-11-22 1998-11-15 Amo Gmbh Tunnel-effekt bauelement und verfahren zu seiner herstellung
US5908813A (en) * 1997-02-14 1999-06-01 Micron Technology, Inc. Method making integrated circuit metallization with superconductor BEOL wiring
US5930165A (en) * 1997-10-31 1999-07-27 The United States Of America As Represented By The Secretary Of The Navy Fringe field superconducting system
DE19930531C2 (de) 1999-07-01 2001-07-05 Infineon Technologies Ag Tunnelkontakt und Verfahren zu seiner Herstellung
JP4194237B2 (ja) * 1999-12-28 2008-12-10 株式会社リコー 電界効果トランジスタを用いた電圧発生回路及び基準電圧源回路
US20060289976A1 (en) * 2005-06-23 2006-12-28 Intel Corporation Pre-patterned thin film capacitor and method for embedding same in a package substrate
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US7880204B2 (en) * 2006-10-02 2011-02-01 Massachusetts Institute Of Technology System and method for providing a high frequency response silicon photodetector
EP3031443A1 (de) 2014-12-12 2016-06-15 Basf Se Zusammensetzung enthaltend Kohlehydratpartialester
CN110335939B (zh) * 2018-05-17 2021-05-04 大连理工大学 氟化异质结势垒层的半导体磁场传感器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (de) * 1961-08-17
US4157555A (en) * 1977-11-07 1979-06-05 The United States Of America As Represented By The United States Department Of Energy Superconducting transistor
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
JPS592389B2 (ja) * 1980-10-30 1984-01-18 工業技術院長 準粒子注入制御型超電導弱結合素子
US4589001A (en) * 1980-07-09 1986-05-13 Agency Of Industrial Science & Technology Quasiparticle injection control type superconducting device
JPS57106286A (en) * 1980-12-24 1982-07-02 Nec Home Electronics Ltd Reproducer for picture data signal
JPS57106186A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Josephson element
JPS5952885A (ja) * 1982-09-20 1984-03-27 Agency Of Ind Science & Technol ス−パ・シヨツトキ・トランジスタおよびその製造方法
JPS59103389A (ja) * 1982-12-04 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> 超伝導素子及びその製法
JPS59182586A (ja) * 1983-04-01 1984-10-17 Nippon Telegr & Teleph Corp <Ntt> ジヨセフソン接合素子
US4575141A (en) * 1983-11-07 1986-03-11 Burns Michael P Safety dead-bolt lock
JPS60128681A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 超電導多端子素子
DE3373167D1 (en) * 1983-12-28 1987-09-24 Ibm Low temperature tunneling transistor
US4575741A (en) * 1984-04-26 1986-03-11 International Business Machines Corporation Cryogenic transistor with a superconducting base and a semiconductor-isolated collector
JPS6135574A (ja) * 1984-07-27 1986-02-20 Hitachi Ltd 超電導ホトトランジスタ
JPS61110480A (ja) * 1984-11-05 1986-05-28 Hitachi Ltd 超電導デバイス
EP0667645A1 (de) * 1984-11-05 1995-08-16 Hitachi, Ltd. Supraleitende Anordnung
US4630081A (en) * 1984-12-19 1986-12-16 Eaton Corporation MOMOM tunnel emission transistor
JPH06135574A (ja) * 1992-10-27 1994-05-17 Ricoh Co Ltd 給紙カセット

Also Published As

Publication number Publication date
US5311036A (en) 1994-05-10
EP0181191A3 (en) 1988-10-26
EP0181191A2 (de) 1986-05-14
US4884111A (en) 1989-11-28
US5442196A (en) 1995-08-15
US5126801A (en) 1992-06-30
EP0667645A1 (de) 1995-08-16
DE3588086T2 (de) 1996-09-19
EP0181191B1 (de) 1996-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee