DE3373167D1 - Low temperature tunneling transistor - Google Patents

Low temperature tunneling transistor

Info

Publication number
DE3373167D1
DE3373167D1 DE8383113163T DE3373167T DE3373167D1 DE 3373167 D1 DE3373167 D1 DE 3373167D1 DE 8383113163 T DE8383113163 T DE 8383113163T DE 3373167 T DE3373167 T DE 3373167T DE 3373167 D1 DE3373167 D1 DE 3373167D1
Authority
DE
Germany
Prior art keywords
low temperature
tunneling transistor
temperature tunneling
transistor
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383113163T
Other languages
German (de)
Inventor
Volker Graf
Pierre Leopold Gueret
Carl Alexander Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3373167D1 publication Critical patent/DE3373167D1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/856—Electrical transmission or interconnection system
    • Y10S505/857—Nonlinear solid-state device system or circuit
    • Y10S505/86—Gating, i.e. switching circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE8383113163T 1983-12-28 1983-12-28 Low temperature tunneling transistor Expired DE3373167D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP83113163A EP0147482B1 (en) 1983-12-28 1983-12-28 Low temperature tunneling transistor

Publications (1)

Publication Number Publication Date
DE3373167D1 true DE3373167D1 (en) 1987-09-24

Family

ID=8190911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383113163T Expired DE3373167D1 (en) 1983-12-28 1983-12-28 Low temperature tunneling transistor

Country Status (5)

Country Link
US (1) US4647954A (en)
EP (1) EP0147482B1 (en)
JP (1) JPS60142580A (en)
CA (1) CA1216961A (en)
DE (1) DE3373167D1 (en)

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EP0160456B1 (en) * 1984-04-19 1996-07-17 Hitachi, Ltd. Superconducting device
DE3588086T2 (en) * 1984-11-05 1996-09-19 Hitachi Ltd Superconductor arrangement
US5272358A (en) * 1986-08-13 1993-12-21 Hitachi, Ltd. Superconducting device
US4843446A (en) * 1986-02-27 1989-06-27 Hitachi, Ltd. Superconducting photodetector
JPS633467A (en) * 1986-06-20 1988-01-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor device
JPH01200680A (en) * 1988-02-05 1989-08-11 Hitachi Ltd Superconducting field-effect transistor
EP0327121A3 (en) * 1988-02-05 1990-01-10 Hitachi, Ltd. Superconducting field effect transistor
JPH07109906B2 (en) * 1988-03-03 1995-11-22 松下電器産業株式会社 Superconducting transistor circuit
US4990487A (en) * 1988-03-11 1991-02-05 The University Of Tokyo Superconductive optoelectronic devices
JPH022179A (en) * 1988-06-13 1990-01-08 Fujitsu Ltd Metal semiconductor fet
JP2746990B2 (en) * 1989-03-16 1998-05-06 株式会社東芝 Superconducting element
US5376626A (en) * 1989-09-25 1994-12-27 The United States Of America As Represented By The Secretary Of The Air Force Magnetic field operated superconductor switch
US6774463B1 (en) 1990-02-01 2004-08-10 International Business Machines Corporation Superconductor gate semiconductor channel field effect transistor
EP0460356A3 (en) * 1990-06-06 1992-11-04 International Business Machines Corporation Contacts to semiconductors having zero resistance
KR100240629B1 (en) * 1997-08-30 2000-01-15 정선종 The charging effect nano transistor for tera bit memory devices and method of manufacturing the same
US7026642B2 (en) * 2003-08-27 2006-04-11 Micron Technology, Inc. Vertical tunneling transistor
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
CN103745929A (en) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 Preparation method of Schottky barrier MOSFET
WO2019160572A2 (en) 2017-05-16 2019-08-22 PsiQuantum Corp. Gated superconducting photon detector
WO2019160573A2 (en) 2017-05-16 2019-08-22 PsiQuantum Corp. Superconducting signal amplifier
US10566516B2 (en) 2017-07-28 2020-02-18 PsiQuantum Corp. Photodetector with superconductor nanowire transistor based on interlayer heat transfer
US10361703B2 (en) 2017-10-05 2019-07-23 PsiQuantum Corp. Superconducting logic circuits
US10461445B2 (en) 2017-11-13 2019-10-29 PsiQuantum Corp. Methods and devices for impedance multiplication
WO2019157077A1 (en) 2018-02-06 2019-08-15 PsiQuantum Corp. Superconducting photon detector
WO2019160869A1 (en) 2018-02-14 2019-08-22 PsiQuantum Corp. Superconducting logic components
WO2019213147A1 (en) 2018-05-01 2019-11-07 PsiQuantum Corp. Photon number resolving superconducting detector
US10984857B2 (en) 2018-08-16 2021-04-20 PsiQuantum Corp. Superconductive memory cells and devices
US10573800B1 (en) 2018-08-21 2020-02-25 PsiQuantum Corp. Superconductor-to-insulator devices
US11101215B2 (en) 2018-09-19 2021-08-24 PsiQuantum Corp. Tapered connectors for superconductor circuits
US11719653B1 (en) 2018-09-21 2023-08-08 PsiQuantum Corp. Methods and systems for manufacturing superconductor devices
US10944403B2 (en) 2018-10-27 2021-03-09 PsiQuantum Corp. Superconducting field-programmable gate array
US11289590B1 (en) 2019-01-30 2022-03-29 PsiQuantum Corp. Thermal diode switch
US11569816B1 (en) 2019-04-10 2023-01-31 PsiQuantum Corp. Superconducting switch
US11009387B2 (en) 2019-04-16 2021-05-18 PsiQuantum Corp. Superconducting nanowire single photon detector and method of fabrication thereof
US11380731B1 (en) 2019-09-26 2022-07-05 PsiQuantum Corp. Superconducting device with asymmetric impedance
US11585695B1 (en) 2019-10-21 2023-02-21 PsiQuantum Corp. Self-triaging photon detector
US11994426B1 (en) 2019-11-13 2024-05-28 PsiQuantum Corp. Scalable photon number resolving photon detector
US11563162B2 (en) * 2020-01-09 2023-01-24 International Business Machines Corporation Epitaxial Josephson junction transmon device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500137A (en) * 1967-12-22 1970-03-10 Texas Instruments Inc Cryogenic semiconductor devices
DE2261527C2 (en) * 1972-12-15 1983-04-21 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Semiconductor body with alternately successive n- and p-doped zones in a predetermined direction, method for its production and uses of the semiconductor body
US4157555A (en) * 1977-11-07 1979-06-05 The United States Of America As Represented By The United States Department Of Energy Superconducting transistor
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
US4220959A (en) * 1979-03-23 1980-09-02 Sperry Corporation Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier
US4334158A (en) * 1980-06-06 1982-06-08 International Business Machines Corporation Superconducting switch and amplifier device
JPS57176781A (en) * 1981-04-22 1982-10-30 Toshiba Corp Superconductive device
US4494016A (en) * 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
JPS59103389A (en) * 1982-12-04 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> Superconductive element and manufacture thereof

Also Published As

Publication number Publication date
EP0147482A1 (en) 1985-07-10
JPH0234194B2 (en) 1990-08-01
CA1216961A (en) 1987-01-20
EP0147482B1 (en) 1987-08-19
JPS60142580A (en) 1985-07-27
US4647954A (en) 1987-03-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee