DE3587496D1 - Lumineszenzdiode mit kantenemission. - Google Patents

Lumineszenzdiode mit kantenemission.

Info

Publication number
DE3587496D1
DE3587496D1 DE8585901265T DE3587496T DE3587496D1 DE 3587496 D1 DE3587496 D1 DE 3587496D1 DE 8585901265 T DE8585901265 T DE 8585901265T DE 3587496 T DE3587496 T DE 3587496T DE 3587496 D1 DE3587496 D1 DE 3587496D1
Authority
DE
Germany
Prior art keywords
active layer
luminescence diode
edge emission
confined
leaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585901265T
Other languages
English (en)
Other versions
DE3587496T2 (de
Inventor
Frederick Scholl
Stephen Anderson
Michael Coden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Codenoll Technology Corp
Original Assignee
Codenoll Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Codenoll Technology Corp filed Critical Codenoll Technology Corp
Publication of DE3587496D1 publication Critical patent/DE3587496D1/de
Application granted granted Critical
Publication of DE3587496T2 publication Critical patent/DE3587496T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Surface Treatment Of Optical Elements (AREA)
DE85901265T 1984-02-23 1985-02-22 Lumineszenzdiode mit kantenemission. Expired - Fee Related DE3587496T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58284484A 1984-02-23 1984-02-23

Publications (2)

Publication Number Publication Date
DE3587496D1 true DE3587496D1 (de) 1993-09-09
DE3587496T2 DE3587496T2 (de) 1994-02-03

Family

ID=24330714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85901265T Expired - Fee Related DE3587496T2 (de) 1984-02-23 1985-02-22 Lumineszenzdiode mit kantenemission.

Country Status (8)

Country Link
US (1) US4766470A (de)
EP (1) EP0174344B1 (de)
JP (1) JPH0697703B2 (de)
AT (1) ATE92671T1 (de)
CA (1) CA1267716A (de)
DE (1) DE3587496T2 (de)
IL (1) IL74437A (de)
WO (1) WO1985003809A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4779280A (en) * 1986-05-23 1988-10-18 Bernard Sermage Semiconductor laser equipped with means for reinjecting the spontaneous emission into the active layer
NL8700904A (nl) * 1987-04-16 1988-11-16 Philips Nv Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.
JPH01264275A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 半導体発光素子
JPH01289287A (ja) * 1988-05-17 1989-11-21 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体光増幅素子
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
JP2763008B2 (ja) * 1988-11-28 1998-06-11 三菱化学株式会社 ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
EP0582078B1 (de) * 1992-08-05 2000-08-16 Motorola, Inc. Seitlich emittierende Superlumineszenzdiode
GB2270199B (en) * 1992-08-25 1995-05-10 Mitsubishi Cable Ind Ltd Semiconductor light emitting element
DE4231007C2 (de) * 1992-09-16 1998-08-20 Siemens Ag Verfahren zum Herstellen von Lumineszenzdioden
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JPH0832110A (ja) * 1994-07-19 1996-02-02 Oki Electric Ind Co Ltd 端面発光型ｌｅｄ、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法
DE19652528A1 (de) * 1996-12-17 1998-06-18 Siemens Ag LED mit allseitiger Lichtauskopplung
RU2134007C1 (ru) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
RU2142665C1 (ru) 1998-08-10 1999-12-10 Швейкин Василий Иванович Инжекционный лазер
RU2142661C1 (ru) * 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
DE10220333B4 (de) * 2002-05-07 2008-03-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einer Mehrzahl von Strukturelementen
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
DE102004052688B4 (de) * 2004-10-29 2007-06-28 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip sowie optoelektronisches Bauteil mit solch einem Lumineszenzdiodenchip
KR100706507B1 (ko) * 2005-06-02 2007-04-11 엘지전자 주식회사 디지털 비디오 녹화 및 재생 장치에서의 복수의 타이틀복사 방법
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly
WO2007100721A2 (en) * 2006-02-24 2007-09-07 Cadbury Adams Usa Llc Liquid-filled chewing gum composition
US7560746B2 (en) * 2007-02-28 2009-07-14 Samsung Electro-Mechanics Co., Ltd. Light emitting diodes and display apparatuses using the same
KR20100137524A (ko) * 2008-04-23 2010-12-30 에이전시 포 사이언스, 테크놀로지 앤드 리서치 발광 다이오드 구조, 램프 장치 및 발광 다이오드 구조를 형성하는 방법
FR3032950B1 (fr) 2015-02-20 2017-03-17 Automatisation Et Renovation Du Conditionnement Dans Les Ind Laitieres Arcil Machine et procede de convoyage d'articles
US11257388B2 (en) * 2019-10-30 2022-02-22 Honeywell International Inc. Obstruction detection and warning system and method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047301A (de) * 1963-03-22
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
US4016505A (en) * 1973-03-20 1977-04-05 Matsushita Electronics Corporation Double heterostructure semiconductor laser
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
US3982207A (en) * 1975-03-07 1976-09-21 Bell Telephone Laboratories, Incorporated Quantum effects in heterostructure lasers
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US4080617A (en) * 1976-06-09 1978-03-21 Northern Telecom Limited Optoelectronic devices with control of light propagation
GB1557072A (en) * 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
US4184170A (en) * 1977-02-11 1980-01-15 Xerox Corporation Light emitting diode
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
JPS54155788A (en) * 1978-05-30 1979-12-08 Oki Electric Ind Co Ltd Semiconductor device
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
JPS56107587A (en) * 1980-01-31 1981-08-26 Toshiba Corp End radiation type light emitting diode
US4325034A (en) * 1980-02-12 1982-04-13 Northern Telecom Limited Semiconductor lasers with integrally formed light emitting diodes
US4359774A (en) * 1980-11-04 1982-11-16 Rca Corporation Light emitting device
CA1204315A (en) * 1984-02-08 1986-05-13 Pratt & Whitney Canada Inc. Multiple cutter pass flank milling

Also Published As

Publication number Publication date
US4766470A (en) 1988-08-23
IL74437A0 (en) 1985-05-31
EP0174344A1 (de) 1986-03-19
JPH0697703B2 (ja) 1994-11-30
CA1267716C (en) 1990-04-10
EP0174344B1 (de) 1993-08-04
WO1985003809A1 (en) 1985-08-29
CA1267716A (en) 1990-04-10
DE3587496T2 (de) 1994-02-03
IL74437A (en) 1989-07-31
JPS61502086A (ja) 1986-09-18
EP0174344A4 (de) 1986-07-08
ATE92671T1 (de) 1993-08-15

Similar Documents

Publication Publication Date Title
DE3587496T2 (de) Lumineszenzdiode mit kantenemission.
DE69025273D1 (de) Lichtemittierende Diode mit lichtreflektierender Schicht
US4843524A (en) Illuminated decorations for furnishings and other like structures
DE69226848D1 (de) Lichtemittierende Diode mit verästelter Oberflächenelektrode
DE3172987D1 (en) Light emitting diodes with high external quantum efficiency
DE69325045D1 (de) Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung
DE69017396T2 (de) Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht.
DE3888435D1 (de) Halbleiterlaser mit Oberflächenausstrahlung.
DE69301821T2 (de) Ii-vi laserdiode mit einzelnem quantum well ohne mantelschichten
GB8812410D0 (en) Radar transparent materials
IT7920359A0 (it) Assieme di diodo ad emissione di luce e relativo metodo di fabbricazione.
DE3872240D1 (de) Vorrichtung, bestehend aus einer lichtleitplatte.
DE3888601D1 (de) Halbleiterlaser mit konstanter differentieller Quantenausbeute oder konstanter optischer Ausgangsleistung.
JPS6468703A (en) Terminal part of optical fiber
DE58905535D1 (de) Elektrisch abstimmbarer Halbleiterlaser mit Stegwellenleiter.
DE3579678D1 (de) Laser mit durchstimmbarer emissionswellenlaenge.
DE3381861D1 (de) Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf.
SE9101395D0 (sv) Ytlysande lysdiod
KR930024241A (ko) 반도체 레이저장치 및 이의 제조방법
DE69107260D1 (de) Sichtbares Licht ausstrahlender Halbleiterlaser mit Fensterstruktur.
JPS577984A (en) Semiconductor light emitting device
JPS5687189A (en) Light emitting diode drive circuit
KR900011054A (ko) 발광다이오드 및 제조방법
JPS6450494A (en) Multiwavelength light source semiconductor element
JPS5756980A (en) Light emitting element

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee