JPS54155788A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54155788A JPS54155788A JP6380578A JP6380578A JPS54155788A JP S54155788 A JPS54155788 A JP S54155788A JP 6380578 A JP6380578 A JP 6380578A JP 6380578 A JP6380578 A JP 6380578A JP S54155788 A JPS54155788 A JP S54155788A
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layers
- guide
- guide layers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain a flank light-emitting type semiconductor device which emits light with high brightness and high efficiency by providing guide layers to both the sides of an active layer and by forming the active layer and guide layers of the same semiconductor material small in photo absorptivity.
CONSTITUTION: On both top and reverse surfaces of GaAs substrate 11 as an active layer, GaAs layers 121 and 122 as guide layers are formed by liquid-phase epitaxial growth and on both the surfaces, AlxGa1-xAs clad layers 131 and 132 are also formed by liquid-phase growth. In this case, Si, bipolar impurity, is used as impurities doped in active layer 11 and guide layers 121 and 122 using the same semiconductor material so as to decreasing the photo absorptivity, thereby obtaining a N-type or P-type device. In the above-mentioned constitution, light emitted from one point P of active layer in the X-axial direction at angle θ is reflected by heter- interface 14 between the guide layer and clad layer and emitted out from flank 15 at angle θ. Consequently, there is no need to consider conditions for agreeing lattice constants, and the characteristics improve remarkably.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6380578A JPS54155788A (en) | 1978-05-30 | 1978-05-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6380578A JPS54155788A (en) | 1978-05-30 | 1978-05-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54155788A true JPS54155788A (en) | 1979-12-08 |
Family
ID=13239947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6380578A Pending JPS54155788A (en) | 1978-05-30 | 1978-05-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54155788A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697703B2 (en) * | 1984-02-23 | 1994-11-30 | コウドノル テクノロジ− コ−ポレイシヨン | Edge emitting light emitting diode |
-
1978
- 1978-05-30 JP JP6380578A patent/JPS54155788A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697703B2 (en) * | 1984-02-23 | 1994-11-30 | コウドノル テクノロジ− コ−ポレイシヨン | Edge emitting light emitting diode |
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