JPS54155788A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54155788A
JPS54155788A JP6380578A JP6380578A JPS54155788A JP S54155788 A JPS54155788 A JP S54155788A JP 6380578 A JP6380578 A JP 6380578A JP 6380578 A JP6380578 A JP 6380578A JP S54155788 A JPS54155788 A JP S54155788A
Authority
JP
Japan
Prior art keywords
active layer
layers
guide
guide layers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6380578A
Other languages
Japanese (ja)
Inventor
Yoshio Kawai
Noriyuki Shimano
Masaaki Sakuta
Yasuhiro Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP6380578A priority Critical patent/JPS54155788A/en
Publication of JPS54155788A publication Critical patent/JPS54155788A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a flank light-emitting type semiconductor device which emits light with high brightness and high efficiency by providing guide layers to both the sides of an active layer and by forming the active layer and guide layers of the same semiconductor material small in photo absorptivity.
CONSTITUTION: On both top and reverse surfaces of GaAs substrate 11 as an active layer, GaAs layers 121 and 122 as guide layers are formed by liquid-phase epitaxial growth and on both the surfaces, AlxGa1-xAs clad layers 131 and 132 are also formed by liquid-phase growth. In this case, Si, bipolar impurity, is used as impurities doped in active layer 11 and guide layers 121 and 122 using the same semiconductor material so as to decreasing the photo absorptivity, thereby obtaining a N-type or P-type device. In the above-mentioned constitution, light emitted from one point P of active layer in the X-axial direction at angle θ is reflected by heter- interface 14 between the guide layer and clad layer and emitted out from flank 15 at angle θ. Consequently, there is no need to consider conditions for agreeing lattice constants, and the characteristics improve remarkably.
COPYRIGHT: (C)1979,JPO&Japio
JP6380578A 1978-05-30 1978-05-30 Semiconductor device Pending JPS54155788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6380578A JPS54155788A (en) 1978-05-30 1978-05-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6380578A JPS54155788A (en) 1978-05-30 1978-05-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54155788A true JPS54155788A (en) 1979-12-08

Family

ID=13239947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6380578A Pending JPS54155788A (en) 1978-05-30 1978-05-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54155788A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697703B2 (en) * 1984-02-23 1994-11-30 コウドノル テクノロジ− コ−ポレイシヨン Edge emitting light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697703B2 (en) * 1984-02-23 1994-11-30 コウドノル テクノロジ− コ−ポレイシヨン Edge emitting light emitting diode

Similar Documents

Publication Publication Date Title
US3813587A (en) Light emitting diodes of the injection type
JPS55165691A (en) Compound semiconductor laser element
JPS5688388A (en) Semiconductor laser device
GB2284705A (en) Light emitting diodes with modified window layers
US5181084A (en) Infrared light emitting diode with grading
JPS55141769A (en) Electric field light emitting element
US4296425A (en) Luminescent diode having multiple hetero junctions
GB1375269A (en)
US5103270A (en) Double hetero type epitaxial wafer with refractive indices
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS54155788A (en) Semiconductor device
JPS55158691A (en) Semiconductor light emitting device manufacture thereof
GB1383960A (en) Semiconductor laser
US4477824A (en) Light emitting device for optical switching
JPH0897466A (en) Light emitting device
JPS55150288A (en) Semiconductor laser
JPS52152184A (en) Semiconductor device
SU470244A1 (en) Semiconductor light-emitting structure
GB1526452A (en) Electroluminescent diodes and a method of manufacturing same
SU928942A1 (en) Method of producing structures with p-n junction on base of type aiii bv semiconductors
JPS55124280A (en) Method of fabricating light emitting diode
KR20000027652A (en) Photoelectric devices and method for manufacturing photoelectric devices
JPS5626480A (en) Semiconductor light emitting device and manufacturing process thereof
JP2900493B2 (en) Light emitting element
JPH0732269B2 (en) Semiconductor light emitting element