JPS6450494A - Multiwavelength light source semiconductor element - Google Patents

Multiwavelength light source semiconductor element

Info

Publication number
JPS6450494A
JPS6450494A JP20789487A JP20789487A JPS6450494A JP S6450494 A JPS6450494 A JP S6450494A JP 20789487 A JP20789487 A JP 20789487A JP 20789487 A JP20789487 A JP 20789487A JP S6450494 A JPS6450494 A JP S6450494A
Authority
JP
Japan
Prior art keywords
units
substrate
light source
semiconductor element
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20789487A
Other languages
Japanese (ja)
Inventor
Tomoo Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20789487A priority Critical patent/JPS6450494A/en
Publication of JPS6450494A publication Critical patent/JPS6450494A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To guide laser radiation with small loss by disposing a plurality of light emitting units on the surface of a semiconductor substrate in parallel to the surface of the substrate, and forming an element isolation layer between the units of a high resistance semiconductor layer having a refractive index lower than that of the material of the units. CONSTITUTION:A plurality of stripe-like light emitting units 11, 12 made of different material compositions are disposed in a surface parallel to the surface of a semiconductor substrate 16 on the substrate 16, and an element isolation layer 13 between the units 11 and 12 is formed of a high resistance semiconductor layer having lower refractive indices than those of the materials of the units 11, 12. Accordingly, an electric resistance between the adjacent units 11 and 12 is very large, its leakage current is small due to it, and the refractive indices are lower than those of the units 11, 12. Therefore, the units 11, 12 have waveguide structures. Thus, the emitted light can be efficiently guided.
JP20789487A 1987-08-20 1987-08-20 Multiwavelength light source semiconductor element Pending JPS6450494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20789487A JPS6450494A (en) 1987-08-20 1987-08-20 Multiwavelength light source semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20789487A JPS6450494A (en) 1987-08-20 1987-08-20 Multiwavelength light source semiconductor element

Publications (1)

Publication Number Publication Date
JPS6450494A true JPS6450494A (en) 1989-02-27

Family

ID=16547333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20789487A Pending JPS6450494A (en) 1987-08-20 1987-08-20 Multiwavelength light source semiconductor element

Country Status (1)

Country Link
JP (1) JPS6450494A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292985A (en) * 1985-06-21 1986-12-23 Hitachi Ltd Photoelectronic device
JPS6387784A (en) * 1986-09-18 1988-04-19 イーストマン・コダック・カンパニー Monolithic integrated planar laser with different emitted wavelength and manufacture of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292985A (en) * 1985-06-21 1986-12-23 Hitachi Ltd Photoelectronic device
JPS6387784A (en) * 1986-09-18 1988-04-19 イーストマン・コダック・カンパニー Monolithic integrated planar laser with different emitted wavelength and manufacture of the same

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