DE3582496D1 - Reaktorvorrichtung fuer halbleiterwaffelbehandlung. - Google Patents

Reaktorvorrichtung fuer halbleiterwaffelbehandlung.

Info

Publication number
DE3582496D1
DE3582496D1 DE8585904545T DE3582496T DE3582496D1 DE 3582496 D1 DE3582496 D1 DE 3582496D1 DE 8585904545 T DE8585904545 T DE 8585904545T DE 3582496 T DE3582496 T DE 3582496T DE 3582496 D1 DE3582496 D1 DE 3582496D1
Authority
DE
Germany
Prior art keywords
waffle
semiconductor
treatment
reactor device
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585904545T
Other languages
English (en)
Inventor
L Hammond
L Ramiller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tetron Inc
Original Assignee
Tetron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tetron Inc filed Critical Tetron Inc
Application granted granted Critical
Publication of DE3582496D1 publication Critical patent/DE3582496D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE8585904545T 1984-10-19 1985-09-03 Reaktorvorrichtung fuer halbleiterwaffelbehandlung. Expired - Fee Related DE3582496D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/662,879 US4694779A (en) 1984-10-19 1984-10-19 Reactor apparatus for semiconductor wafer processing
PCT/US1985/001674 WO1986002289A1 (en) 1984-10-19 1985-09-03 Reactor apparatus for semiconductor wafer processing

Publications (1)

Publication Number Publication Date
DE3582496D1 true DE3582496D1 (de) 1991-05-16

Family

ID=24659611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585904545T Expired - Fee Related DE3582496D1 (de) 1984-10-19 1985-09-03 Reaktorvorrichtung fuer halbleiterwaffelbehandlung.

Country Status (5)

Country Link
US (1) US4694779A (de)
EP (1) EP0198842B1 (de)
JP (1) JPS62500624A (de)
DE (1) DE3582496D1 (de)
WO (1) WO1986002289A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
JPS63144513A (ja) * 1986-12-09 1988-06-16 Nkk Corp バレル型エピタキシヤル成長装置
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus
US5387289A (en) * 1992-09-22 1995-02-07 Genus, Inc. Film uniformity by selective pressure gradient control
FI972874A0 (fi) * 1997-07-04 1997-07-04 Mikrokemia Oy Foerfarande och anordning foer framstaellning av tunnfilmer
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
FI118474B (fi) 1999-12-28 2007-11-30 Asm Int Laite ohutkalvojen valmistamiseksi
FI118343B (fi) 1999-12-28 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US20040142558A1 (en) * 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
ES2268974B2 (es) * 2005-06-16 2007-12-01 Universidad Politecnica De Madrid Reactor epitaxial para la produccion de obleas a gran escala.
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
JP2009512196A (ja) * 2005-10-05 2009-03-19 アプライド マテリアルズ インコーポレイテッド エピタキシャル膜形成のための方法及び装置
US20070264427A1 (en) * 2005-12-21 2007-11-15 Asm Japan K.K. Thin film formation by atomic layer growth and chemical vapor deposition
US8353259B2 (en) * 2007-08-24 2013-01-15 United Technologies Corporation Masking fixture for a coating process
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
JP5721132B2 (ja) 2009-12-10 2015-05-20 オルボテック エルティ ソラー，エルエルシー 真空処理装置用シャワーヘッド・アセンブリ及び真空処理装置用シャワーヘッド・アセンブリを真空処理チャンバに締結する方法
TWI443211B (zh) * 2010-05-05 2014-07-01 Hon Hai Prec Ind Co Ltd 鍍膜裝置
US20110315081A1 (en) * 2010-06-25 2011-12-29 Law Kam S Susceptor for plasma processing chamber
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
DE102012103204A1 (de) * 2012-04-13 2013-10-17 Osram Opto Semiconductors Gmbh Verfahren zur Beschichtung eines Substrates mit einem Halbleitermaterial
DE102012109251A1 (de) * 2012-09-28 2014-04-03 Osram Gmbh Vorrichtung und Verfahren zur Beschichtung von Substraten
US11555247B2 (en) * 2019-09-20 2023-01-17 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and movable electrode arrangement, movable support arrangement, and application thereof
US20220195586A1 (en) * 2020-12-23 2022-06-23 Tsinghua University Substrate holder for mass production of surface-enhanced raman scattering substrates
DE102022124811B3 (de) * 2022-06-08 2023-12-07 VON ARDENNE Asset GmbH & Co. KG Substrat-Tragevorrichtung, ein Verwenden dieser, ein Vakuumprozess-System und ein Verfahren

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544253C3 (de) * 1964-09-14 1974-08-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum epitaktischen Abscheiden yon Halbleitermaterial
US3594242A (en) * 1966-01-03 1971-07-20 Monsanto Co Method for production of epitaxial films
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
DE1929422B2 (de) * 1969-06-10 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device
US3699298A (en) * 1971-12-23 1972-10-17 Western Electric Co Methods and apparatus for heating and/or coating articles
JPS516463A (en) * 1974-07-05 1976-01-20 Hitachi Ltd Handotaiueehano netsushorijigu
US4033287A (en) * 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
JPS52144961A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Vapor growth method
JPS54158867A (en) * 1978-06-05 1979-12-15 Mitsubishi Electric Corp Plasma etching unit
JPS55110030A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for vapor growth
JPS56112721A (en) * 1980-02-12 1981-09-05 Toshiba Corp Vapor phase epitaxial growing apparatus
JPS577899A (en) * 1980-06-13 1982-01-16 Hitachi Ltd Vapor phase reacting apparatus
JPS5772330A (en) * 1980-10-23 1982-05-06 Fujitsu Ltd Plasma etching
JPS5866325A (ja) * 1981-10-15 1983-04-20 Toshiba Ceramics Co Ltd エピタキシヤル成長用サセプタ−
US4522149A (en) * 1983-11-21 1985-06-11 General Instrument Corp. Reactor and susceptor for chemical vapor deposition process

Also Published As

Publication number Publication date
EP0198842A4 (de) 1988-07-04
US4694779A (en) 1987-09-22
JPS62500624A (ja) 1987-03-12
EP0198842B1 (de) 1991-04-10
WO1986002289A1 (en) 1986-04-24
EP0198842A1 (de) 1986-10-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee