JPS54158867A - Plasma etching unit - Google Patents
Plasma etching unitInfo
- Publication number
- JPS54158867A JPS54158867A JP6800678A JP6800678A JPS54158867A JP S54158867 A JPS54158867 A JP S54158867A JP 6800678 A JP6800678 A JP 6800678A JP 6800678 A JP6800678 A JP 6800678A JP S54158867 A JPS54158867 A JP S54158867A
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- reactor
- circumference surface
- etched
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To etch several objects under the uniform conditions by arranging a gas supply pipe and an exhaust pipe at an identical interval on the outer circumference surface and inner circumference surface of a reactor pipe formed in a doughnut shape and by forming two electrodes covering the reactor pipe.
CONSTITUTION: Reactor container 20 is formed of reactor pipe 2a which is formed of quartz in a horseshoe shape and contains etched object 1 inside, and pipe-shaped link lid 5a which links both the open parts of reactor pipe 2a together. Gas supply intake 3a and exhaust pipe 4a are arranged at an identical interval on the inner circumference surface and outer circumference surface of reactor container 20 respectively, and electrodes 7Aa and 7Bb for high-frequency power application are provided covering the upper half and lower half of reactor pipe 2a. In this constitution, several places identical in gas flow condition and in electric-field intensity are formed inside of reactor container 20, and consequently, etched objects 1 arranged there are etched under the even etching conditions, so that unevenness can be eliminated which occurs when several objects are etched simultaneously.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6800678A JPS54158867A (en) | 1978-06-05 | 1978-06-05 | Plasma etching unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6800678A JPS54158867A (en) | 1978-06-05 | 1978-06-05 | Plasma etching unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54158867A true JPS54158867A (en) | 1979-12-15 |
Family
ID=13361337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6800678A Pending JPS54158867A (en) | 1978-06-05 | 1978-06-05 | Plasma etching unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54158867A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1986002289A1 (en) * | 1984-10-19 | 1986-04-24 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
-
1978
- 1978-06-05 JP JP6800678A patent/JPS54158867A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1986002289A1 (en) * | 1984-10-19 | 1986-04-24 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
JPS62500624A (en) * | 1984-10-19 | 1987-03-12 | テトロン・インコ−ポレ−テッド | Reactor equipment for semiconductor wafer processing |
US4694779A (en) * | 1984-10-19 | 1987-09-22 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
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