DE3536299A1 - Solarzelle aus silizium - Google Patents
Solarzelle aus siliziumInfo
- Publication number
- DE3536299A1 DE3536299A1 DE19853536299 DE3536299A DE3536299A1 DE 3536299 A1 DE3536299 A1 DE 3536299A1 DE 19853536299 DE19853536299 DE 19853536299 DE 3536299 A DE3536299 A DE 3536299A DE 3536299 A1 DE3536299 A1 DE 3536299A1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- silicon
- cell according
- charge carriers
- mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 239000002800 charge carrier Substances 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- -1 aluminum oxide nitride Chemical class 0.000 claims 1
- 239000012141 concentrate Substances 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000005215 recombination Methods 0.000 abstract description 15
- 230000006798 recombination Effects 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000000926 separation method Methods 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 75
- 239000012212 insulator Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electromechanical Clocks (AREA)
Priority Applications (21)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853536299 DE3536299A1 (de) | 1985-10-11 | 1985-10-11 | Solarzelle aus silizium |
| ES86113926T ES2023360B3 (es) | 1985-10-11 | 1986-10-08 | Celula solar. |
| KR1019870700498A KR940010161B1 (ko) | 1985-10-11 | 1986-10-08 | 태양 전지 |
| BR8606917A BR8606917A (pt) | 1985-10-11 | 1986-10-08 | Celula solar |
| EP86113926A EP0219763B1 (de) | 1985-10-11 | 1986-10-08 | Solarzelle |
| US07/059,264 US4828628A (en) | 1985-10-11 | 1986-10-08 | Solar cell |
| DE86EP8600573T DE3690520D2 (en) | 1985-10-11 | 1986-10-08 | Solar cell |
| JP61505390A JPS63501668A (ja) | 1985-10-11 | 1986-10-08 | 太陽電池 |
| AU64758/86A AU590803B2 (en) | 1985-10-11 | 1986-10-08 | Solar cell |
| AT86113926T ATE64240T1 (de) | 1985-10-11 | 1986-10-08 | Solarzelle. |
| DZ860210A DZ996A1 (fr) | 1985-10-11 | 1986-10-08 | Cellule solaire. |
| DE8686113926T DE3679629D1 (de) | 1985-10-11 | 1986-10-08 | Solarzelle. |
| PCT/EP1986/000573 WO1987002513A1 (fr) | 1985-10-11 | 1986-10-08 | Cellule solaire |
| MX003987A MX171858B (es) | 1985-10-11 | 1986-10-09 | Celda solar |
| EG632/86A EG17560A (en) | 1985-10-11 | 1986-10-09 | Solar cell of silicon |
| IN736/CAL/86A IN164598B (xx) | 1985-10-11 | 1986-10-09 | |
| IL80278A IL80278A0 (en) | 1985-10-11 | 1986-10-10 | Solar cell |
| MA21019A MA20789A1 (fr) | 1985-10-11 | 1986-10-10 | Cellule solaire |
| TNTNSN86141A TNSN86141A1 (fr) | 1985-10-11 | 1986-10-13 | Cellule solaire |
| US07/284,420 US4900369A (en) | 1985-10-11 | 1988-12-14 | Solar cell |
| GR91401265T GR3002657T3 (en) | 1985-10-11 | 1991-09-05 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19853536299 DE3536299A1 (de) | 1985-10-11 | 1985-10-11 | Solarzelle aus silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3536299A1 true DE3536299A1 (de) | 1987-04-16 |
Family
ID=6283352
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853536299 Withdrawn DE3536299A1 (de) | 1985-10-11 | 1985-10-11 | Solarzelle aus silizium |
| DE86EP8600573T Expired DE3690520D2 (en) | 1985-10-11 | 1986-10-08 | Solar cell |
| DE8686113926T Expired - Fee Related DE3679629D1 (de) | 1985-10-11 | 1986-10-08 | Solarzelle. |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE86EP8600573T Expired DE3690520D2 (en) | 1985-10-11 | 1986-10-08 | Solar cell |
| DE8686113926T Expired - Fee Related DE3679629D1 (de) | 1985-10-11 | 1986-10-08 | Solarzelle. |
Country Status (18)
| Country | Link |
|---|---|
| US (2) | US4828628A (xx) |
| EP (1) | EP0219763B1 (xx) |
| JP (1) | JPS63501668A (xx) |
| KR (1) | KR940010161B1 (xx) |
| AT (1) | ATE64240T1 (xx) |
| AU (1) | AU590803B2 (xx) |
| BR (1) | BR8606917A (xx) |
| DE (3) | DE3536299A1 (xx) |
| DZ (1) | DZ996A1 (xx) |
| EG (1) | EG17560A (xx) |
| ES (1) | ES2023360B3 (xx) |
| GR (1) | GR3002657T3 (xx) |
| IL (1) | IL80278A0 (xx) |
| IN (1) | IN164598B (xx) |
| MA (1) | MA20789A1 (xx) |
| MX (1) | MX171858B (xx) |
| TN (1) | TNSN86141A1 (xx) |
| WO (1) | WO1987002513A1 (xx) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005026176B3 (de) * | 2005-06-06 | 2007-01-04 | Universität Konstanz | Verfahren zur flächigen Kontaktierung von Halbleiterbauelementen mit reduzierter Durchbiegung sowie entsprechendes Halbleiterbauelement und Herstellungsvorrichtung |
| US7495167B2 (en) | 2003-10-10 | 2009-02-24 | Hitachi, Ltd. | Silicon solar cell and production method thereof |
| DE102009024807B3 (de) * | 2009-06-02 | 2010-10-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3712503A1 (de) * | 1987-04-13 | 1988-11-03 | Nukem Gmbh | Solarzelle |
| DE3725346A1 (de) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle |
| US5215599A (en) * | 1991-05-03 | 1993-06-01 | Electric Power Research Institute | Advanced solar cell |
| US5320684A (en) * | 1992-05-27 | 1994-06-14 | Mobil Solar Energy Corporation | Solar cell and method of making same |
| KR100416741B1 (ko) * | 1997-03-31 | 2004-05-17 | 삼성전자주식회사 | 후면 부분소결형 실리콘 태양전지 |
| GB2325081B (en) * | 1997-05-06 | 2000-01-26 | Simage Oy | Semiconductor imaging device |
| US5936193A (en) * | 1997-05-09 | 1999-08-10 | Parise; Ronald J. | Nighttime solar cell |
| US20060021648A1 (en) * | 1997-05-09 | 2006-02-02 | Parise Ronald J | Device and method to transmit waste heat or thermal pollution into deep space |
| DE19729522C2 (de) * | 1997-07-10 | 2001-11-08 | Dirk Koenig | Anordnung zum Aufbau einer Solarzelle für polykristalline oder amorphe Halbleiter |
| JPH11103079A (ja) * | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | 集積型光起電力装置の製造方法 |
| US6774300B2 (en) * | 2001-04-27 | 2004-08-10 | Adrena, Inc. | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure |
| US7659475B2 (en) * | 2003-06-20 | 2010-02-09 | Imec | Method for backside surface passivation of solar cells and solar cells with such passivation |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US20100224241A1 (en) * | 2005-06-22 | 2010-09-09 | Kyocera Corporation | Solar Cell and Solar Cell Manufacturing Method |
| WO2007055484A1 (en) * | 2005-11-08 | 2007-05-18 | Lg Chem, Ltd. | Solar cell of high efficiency and process for preparation of the same |
| KR101241617B1 (ko) * | 2006-12-01 | 2013-03-08 | 샤프 가부시키가이샤 | 태양 전지 및 그 제조 방법 |
| KR100974220B1 (ko) * | 2006-12-13 | 2010-08-06 | 엘지전자 주식회사 | 태양전지 |
| JP5219538B2 (ja) * | 2008-02-12 | 2013-06-26 | 大成建設株式会社 | 太陽光発電薄膜を基材に直接形成した太陽電池 |
| KR100953448B1 (ko) * | 2008-04-02 | 2010-04-20 | 한국기계연구원 | 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법 |
| EP2195853B1 (en) * | 2008-04-17 | 2015-12-16 | LG Electronics Inc. | Solar cell and method of manufacturing the same |
| KR20110042051A (ko) | 2008-06-11 | 2011-04-22 | 솔라 임플란트 테크놀로지스 아이엔씨. | 주입을 사용하여 솔라 셀의 제작 |
| CN102396068A (zh) * | 2009-03-20 | 2012-03-28 | 因特瓦克公司 | 高级高效晶体太阳能电池制备方法 |
| JP5334645B2 (ja) * | 2009-03-31 | 2013-11-06 | 富士フイルム株式会社 | 可撓性太陽電池モジュール |
| JP2010283339A (ja) * | 2009-05-02 | 2010-12-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその作製方法 |
| KR101139458B1 (ko) * | 2009-06-18 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| KR101032624B1 (ko) | 2009-06-22 | 2011-05-06 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| TWI497730B (zh) * | 2009-10-20 | 2015-08-21 | Iner Aec Executive Yuan | 一種薄膜光伏裝置及其製造方法 |
| KR20110062598A (ko) * | 2009-12-03 | 2011-06-10 | 삼성전자주식회사 | 적층막 제조방법, 이를 이용한 태양전지의 제조방법 |
| TW201123480A (en) * | 2009-12-29 | 2011-07-01 | Auria Solar Co Ltd | Solar cell structure and manufacturing method thereof |
| US20110272024A1 (en) * | 2010-04-13 | 2011-11-10 | Applied Materials, Inc. | MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS |
| US8686283B2 (en) | 2010-05-04 | 2014-04-01 | Silevo, Inc. | Solar cell with oxide tunneling junctions |
| KR101203623B1 (ko) * | 2010-06-18 | 2012-11-21 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US20120060918A1 (en) * | 2010-08-16 | 2012-03-15 | Spitzer Mark B | Energy conversion device for photovoltaic cells |
| US20120048376A1 (en) * | 2010-08-30 | 2012-03-01 | Alexander Shkolnik | Silicon-based photovoltaic device produced by essentially electrical means |
| US20120073650A1 (en) * | 2010-09-24 | 2012-03-29 | David Smith | Method of fabricating an emitter region of a solar cell |
| KR101258938B1 (ko) | 2011-07-25 | 2013-05-07 | 엘지전자 주식회사 | 태양 전지 |
| WO2013070978A2 (en) | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Substrate processing system and method |
| WO2014092677A1 (en) * | 2012-12-10 | 2014-06-19 | Alliance For Sustainable Engery, Llc | Monolithic tandem voltage-matched multijunction solar cells |
| TWI570745B (zh) | 2012-12-19 | 2017-02-11 | 因特瓦克公司 | 用於電漿離子植入之柵極 |
| CN105340085B (zh) | 2013-06-26 | 2018-07-06 | 康斯坦茨大学 | 用于生产具有稳定效率的光伏元件的方法和设备 |
| US9466755B2 (en) * | 2014-10-30 | 2016-10-11 | International Business Machines Corporation | MIS-IL silicon solar cell with passivation layer to induce surface inversion |
| JP2017033970A (ja) * | 2015-07-29 | 2017-02-09 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1614832A1 (de) * | 1967-06-27 | 1970-12-23 | Telefunken Patent | Doppelsperrschichtsolarzelle |
| US3988167A (en) * | 1975-03-07 | 1976-10-26 | Rca Corporation | Solar cell device having improved efficiency |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| JPS5329588A (en) * | 1976-08-31 | 1978-03-18 | Shin Meiwa Ind Co Ltd | Apparatus for holding and withdrawing wires in equipment for continuously compressing terminals of a plurality of wires |
| DE2846096C2 (de) * | 1978-10-23 | 1985-01-10 | Rudolf Dipl.-Phys. Dr. 8521 Spardorf Hezel | Solarzelle aus Halbleitermaterial |
| DE2853412A1 (de) * | 1978-12-11 | 1980-07-03 | Rudolf Dr Hezel | Solarzelle aus halbleitermaterial |
| DE2846097A1 (de) * | 1978-10-23 | 1980-04-24 | Rudolf Dipl Phys Dr Hezel | Solarzelle mit verbessertem wirkungsgrad aus einer halbleiteranordnung |
| US4253881A (en) * | 1978-10-23 | 1981-03-03 | Rudolf Hezel | Solar cells composed of semiconductive materials |
| JPS5766677A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Solar battery cell and manufacture thereof |
| US4315097A (en) * | 1980-10-27 | 1982-02-09 | Mcdonnell Douglas Corporation | Back contacted MIS photovoltaic cell |
| JPS57178380A (en) * | 1981-04-27 | 1982-11-02 | Semiconductor Energy Lab Co Ltd | Manufacture of mis type photoelectric transducer |
| JPS5839074A (ja) * | 1981-08-31 | 1983-03-07 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
| JPS58128775A (ja) * | 1982-01-28 | 1983-08-01 | Toshiba Corp | 太陽電池の製造方法 |
| CA1209681A (en) * | 1982-08-04 | 1986-08-12 | Exxon Research And Engineering Company | Optically enhanced thin film photovoltaic device using lithography defined random surfaces |
| DE3308269A1 (de) * | 1983-03-09 | 1984-09-13 | Licentia Patent-Verwaltungs-Gmbh | Solarzelle |
| AU566712B2 (en) * | 1983-10-20 | 1987-10-29 | Unisearch Limited | High efficiency solar cells |
| US4525593A (en) * | 1984-04-16 | 1985-06-25 | Exxon Research And Engineering Co. | Inverted, optically enhanced solar cell |
| DE3420887A1 (de) * | 1984-06-05 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
| US4667060A (en) * | 1985-05-28 | 1987-05-19 | Spire Corporation | Back junction photovoltaic solar cell |
-
1985
- 1985-10-11 DE DE19853536299 patent/DE3536299A1/de not_active Withdrawn
-
1986
- 1986-10-08 DE DE86EP8600573T patent/DE3690520D2/de not_active Expired
- 1986-10-08 EP EP86113926A patent/EP0219763B1/de not_active Expired - Lifetime
- 1986-10-08 AT AT86113926T patent/ATE64240T1/de not_active IP Right Cessation
- 1986-10-08 WO PCT/EP1986/000573 patent/WO1987002513A1/de active Application Filing
- 1986-10-08 JP JP61505390A patent/JPS63501668A/ja active Pending
- 1986-10-08 DZ DZ860210A patent/DZ996A1/fr active
- 1986-10-08 AU AU64758/86A patent/AU590803B2/en not_active Ceased
- 1986-10-08 ES ES86113926T patent/ES2023360B3/es not_active Expired - Lifetime
- 1986-10-08 BR BR8606917A patent/BR8606917A/pt not_active IP Right Cessation
- 1986-10-08 KR KR1019870700498A patent/KR940010161B1/ko not_active IP Right Cessation
- 1986-10-08 DE DE8686113926T patent/DE3679629D1/de not_active Expired - Fee Related
- 1986-10-08 US US07/059,264 patent/US4828628A/en not_active Expired - Fee Related
- 1986-10-09 MX MX003987A patent/MX171858B/es unknown
- 1986-10-09 IN IN736/CAL/86A patent/IN164598B/en unknown
- 1986-10-09 EG EG632/86A patent/EG17560A/xx active
- 1986-10-10 IL IL80278A patent/IL80278A0/xx not_active IP Right Cessation
- 1986-10-10 MA MA21019A patent/MA20789A1/fr unknown
- 1986-10-13 TN TNTNSN86141A patent/TNSN86141A1/fr unknown
-
1988
- 1988-12-14 US US07/284,420 patent/US4900369A/en not_active Expired - Fee Related
-
1991
- 1991-09-05 GR GR91401265T patent/GR3002657T3/el unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7495167B2 (en) | 2003-10-10 | 2009-02-24 | Hitachi, Ltd. | Silicon solar cell and production method thereof |
| DE102004049160B4 (de) * | 2003-10-10 | 2014-09-25 | Hitachi, Ltd. | Silicium-Solarzelle mit gitterförmigen Elektroden auf beiden Seiten des Siliciumsubstrats und Herstellverfahren für diese Silicium-Solarzelle |
| DE102005026176B3 (de) * | 2005-06-06 | 2007-01-04 | Universität Konstanz | Verfahren zur flächigen Kontaktierung von Halbleiterbauelementen mit reduzierter Durchbiegung sowie entsprechendes Halbleiterbauelement und Herstellungsvorrichtung |
| DE102009024807B3 (de) * | 2009-06-02 | 2010-10-07 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren |
| WO2010139312A2 (de) | 2009-06-02 | 2010-12-09 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Solarzelle mit benachbarten elektrisch isolierenden passivierbereichen mit hoher oberflächenladung gegensätzlicher polarität und herstellungsverfahren |
| US8395043B2 (en) | 2009-06-02 | 2013-03-12 | Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh | Solar cell comprising neighboring electrically insulating passivation regions having high surface charges of opposing polarities and production method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0219763A1 (de) | 1987-04-29 |
| IN164598B (xx) | 1989-04-15 |
| WO1987002513A1 (fr) | 1987-04-23 |
| KR880700475A (ko) | 1988-03-15 |
| GR3002657T3 (en) | 1993-01-25 |
| AU590803B2 (en) | 1989-11-16 |
| AU6475886A (en) | 1987-05-05 |
| ES2023360B3 (es) | 1992-01-16 |
| EG17560A (en) | 1990-10-30 |
| US4828628A (en) | 1989-05-09 |
| MX171858B (es) | 1993-11-22 |
| ATE64240T1 (de) | 1991-06-15 |
| IL80278A0 (en) | 1987-01-30 |
| MA20789A1 (fr) | 1987-07-01 |
| DE3679629D1 (de) | 1991-07-11 |
| TNSN86141A1 (fr) | 1990-01-01 |
| EP0219763B1 (de) | 1991-06-05 |
| BR8606917A (pt) | 1987-11-03 |
| KR940010161B1 (ko) | 1994-10-22 |
| DZ996A1 (fr) | 2004-09-13 |
| JPS63501668A (ja) | 1988-06-23 |
| US4900369A (en) | 1990-02-13 |
| DE3690520D2 (en) | 1987-11-19 |
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Legal Events
| Date | Code | Title | Description |
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| 8127 | New person/name/address of the applicant |
Owner name: NUKEM GMBH, 8755 ALZENAU, DE |
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| 8141 | Disposal/no request for examination |