DE3533922C2 - - Google Patents

Info

Publication number
DE3533922C2
DE3533922C2 DE3533922A DE3533922A DE3533922C2 DE 3533922 C2 DE3533922 C2 DE 3533922C2 DE 3533922 A DE3533922 A DE 3533922A DE 3533922 A DE3533922 A DE 3533922A DE 3533922 C2 DE3533922 C2 DE 3533922C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3533922A
Other versions
DE3533922A1 (de
Inventor
Junichi Nagano Jp Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Publication of DE3533922A1 publication Critical patent/DE3533922A1/de
Application granted granted Critical
Publication of DE3533922C2 publication Critical patent/DE3533922C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE19853533922 1984-09-28 1985-09-24 Festkoerper-bildabtastvorrichtung Granted DE3533922A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59203718A JPS6181087A (ja) 1984-09-28 1984-09-28 固体撮像装置

Publications (2)

Publication Number Publication Date
DE3533922A1 DE3533922A1 (de) 1986-04-10
DE3533922C2 true DE3533922C2 (de) 1987-01-15

Family

ID=16478694

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853533922 Granted DE3533922A1 (de) 1984-09-28 1985-09-24 Festkoerper-bildabtastvorrichtung

Country Status (3)

Country Link
US (1) US4678938A (de)
JP (1) JPS6181087A (de)
DE (1) DE3533922A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0746838B2 (ja) * 1985-01-12 1995-05-17 オリンパス光学工業株式会社 固体撮像装置
US5737016A (en) * 1985-11-15 1998-04-07 Canon Kabushiki Kaisha Solid state image pickup apparatus for reducing noise
US4914519A (en) * 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
US5771070A (en) * 1985-11-15 1998-06-23 Canon Kabushiki Kaisha Solid state image pickup apparatus removing noise from the photoelectric converted signal
JPH084127B2 (ja) * 1986-09-30 1996-01-17 キヤノン株式会社 光電変換装置
DE3689707T2 (de) * 1985-11-15 1994-07-14 Canon Kk Photoelektrische Wandlervorrichtung.
JPH0714042B2 (ja) * 1986-02-26 1995-02-15 三菱電機株式会社 固体撮像素子
EP0239808B1 (de) * 1986-03-03 1991-02-27 Kabushiki Kaisha Toshiba Strahlungsdetektor
JPS63100879A (ja) * 1986-10-17 1988-05-02 Hitachi Ltd 固体撮像装置
JPH084129B2 (ja) * 1986-11-19 1996-01-17 キヤノン株式会社 光電変換装置
JPH0671324B2 (ja) * 1987-04-03 1994-09-07 オリンパス光学工業株式会社 撮像装置
JP2564133B2 (ja) * 1987-04-17 1996-12-18 オリンパス光学工業株式会社 固体撮像装置
JPS6442992A (en) * 1987-08-08 1989-02-15 Olympus Optical Co Solid-state image pickup device
US6008687A (en) * 1988-08-29 1999-12-28 Hitachi, Ltd. Switching circuit and display device using the same
JP2678062B2 (ja) * 1989-06-14 1997-11-17 キヤノン株式会社 光電変換装置
US4989067A (en) * 1989-07-03 1991-01-29 General Electric Company Hybrid interconnection structure
US5028788A (en) * 1990-04-03 1991-07-02 Electromed International Ltd. X-ray sensor array
JPH04219063A (ja) * 1990-05-15 1992-08-10 Ricoh Co Ltd 画像読取装置
JP2850039B2 (ja) * 1990-05-16 1999-01-27 オリンパス光学工業株式会社 光電変換装置
JP3031756B2 (ja) * 1990-08-02 2000-04-10 キヤノン株式会社 光電変換装置
US5291044A (en) * 1990-12-12 1994-03-01 Eastman Kodak Company Image sensor with continuous time photodiode
FR2686472A1 (fr) * 1992-01-17 1993-07-23 Thomson Tubes Electroniques Procede d'elaboration d'une image matricielle avec comparaison globale de lignes de piscels et reduction du bruit correle en ligne.
EP0616464B1 (de) * 1993-03-15 1999-06-02 Canon Kabushiki Kaisha Signalprozessor
JPH06334920A (ja) * 1993-03-23 1994-12-02 Nippon Hoso Kyokai <Nhk> 固体撮像素子とその駆動方法
JP3431995B2 (ja) * 1993-06-03 2003-07-28 キヤノン株式会社 撮像装置
JP3774499B2 (ja) 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
GB2318473B (en) * 1996-10-17 2000-11-29 Sony Corp Solid state imaging device,signal processing method and camera
JP2003524545A (ja) * 1999-01-25 2003-08-19 ジェンテクス・コーポレーション 半導体光センサを用いる車両装置制御
US6359274B1 (en) * 1999-01-25 2002-03-19 Gentex Corporation Photodiode light sensor
US6313457B1 (en) 1999-01-25 2001-11-06 Gentex Corporation Moisture detecting system using semiconductor light sensor with integral charge collection
US6402328B1 (en) 1999-01-25 2002-06-11 Gentex Corporation Automatic dimming mirror using semiconductor light sensor with integral charge collection
US6873363B1 (en) * 1999-02-16 2005-03-29 Micron Technology Inc. Technique for flagging oversaturated pixels
US6453008B1 (en) * 1999-07-29 2002-09-17 Kabushiki Kaisha Toshiba Radiation detector noise reduction method and radiation detector
DE19945023C2 (de) * 1999-09-20 2003-04-24 Siemens Ag Flächenhafter Bilddetektor für elektromagnetische Strahlen, insbesondere Röntgenstrahlen
US7543946B2 (en) * 2002-01-10 2009-06-09 Gentex Corporation Dimmable rearview assembly having a glare sensor
JP2003209665A (ja) * 2002-01-16 2003-07-25 Fuji Photo Film Co Ltd 画像読取方法および画像記録読取装置
US7999340B2 (en) * 2007-03-07 2011-08-16 Altasens, Inc. Apparatus and method for forming optical black pixels with uniformly low dark current
US7755679B2 (en) * 2007-03-07 2010-07-13 Altasens, Inc. Apparatus and method for reducing edge effect in an image sensor
US8665350B2 (en) * 2008-05-08 2014-03-04 Altasens, Inc. Method for fixed pattern noise (FPN) correction
US20090278963A1 (en) * 2008-05-08 2009-11-12 Altasens, Inc. Apparatus and method for column fixed pattern noise (FPN) correction
US8164588B2 (en) * 2008-05-23 2012-04-24 Teledyne Scientific & Imaging, Llc System and method for MEMS array actuation including a charge integration circuit to modulate the charge on a variable gap capacitor during an actuation cycle
US8620523B2 (en) 2011-06-24 2013-12-31 Gentex Corporation Rearview assembly with multiple ambient light sensors
WO2013022731A1 (en) 2011-08-05 2013-02-14 Gentex Corporation Optical assembly for a light sensor
US9207116B2 (en) 2013-02-12 2015-12-08 Gentex Corporation Light sensor
US9870753B2 (en) 2013-02-12 2018-01-16 Gentex Corporation Light sensor having partially opaque optic

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010319A (en) * 1975-11-20 1977-03-01 Rca Corporation Smear reduction in ccd imagers
US4387402A (en) * 1980-10-28 1983-06-07 Texas Instruments Incorporated Charge injection imaging device for faithful (dynamic) scene representation
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59108365A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 半導体装置及びその製造方法
JPS59148473A (ja) * 1983-02-14 1984-08-25 Junichi Nishizawa ２次元固体撮像装置の読出し方法
JPS59153381A (ja) * 1983-02-22 1984-09-01 Junichi Nishizawa ２次元固体撮像装置
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPH0831991B2 (ja) * 1984-04-17 1996-03-27 オリンパス光学工業株式会社 固体撮像装置

Also Published As

Publication number Publication date
JPS6181087A (ja) 1986-04-24
DE3533922A1 (de) 1986-04-10
US4678938A (en) 1987-07-07

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee