DE69331357T2 - Photoelektrische Umwandlungsvorrichtung - Google Patents

Photoelektrische Umwandlungsvorrichtung

Info

Publication number
DE69331357T2
DE69331357T2 DE69331357T DE69331357T DE69331357T2 DE 69331357 T2 DE69331357 T2 DE 69331357T2 DE 69331357 T DE69331357 T DE 69331357T DE 69331357 T DE69331357 T DE 69331357T DE 69331357 T2 DE69331357 T2 DE 69331357T2
Authority
DE
Germany
Prior art keywords
photoelectric conversion
conversion device
photoelectric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331357T
Other languages
English (en)
Other versions
DE69331357D1 (de
Inventor
Mahito Shinohara
Isamu Ueno
Hidekazu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69331357D1 publication Critical patent/DE69331357D1/de
Application granted granted Critical
Publication of DE69331357T2 publication Critical patent/DE69331357T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69331357T 1992-03-06 1993-03-05 Photoelektrische Umwandlungsvorrichtung Expired - Fee Related DE69331357T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8305892 1992-03-06

Publications (2)

Publication Number Publication Date
DE69331357D1 DE69331357D1 (de) 2002-01-31
DE69331357T2 true DE69331357T2 (de) 2002-07-04

Family

ID=13791594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331357T Expired - Fee Related DE69331357T2 (de) 1992-03-06 1993-03-05 Photoelektrische Umwandlungsvorrichtung

Country Status (3)

Country Link
US (1) US5406332A (de)
EP (1) EP0559207B1 (de)
DE (1) DE69331357T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3441761B2 (ja) * 1993-05-28 2003-09-02 キヤノン株式会社 イメージセンサ
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
JP3571770B2 (ja) * 1994-09-16 2004-09-29 キヤノン株式会社 光電変換装置
WO1996031976A1 (en) * 1995-04-07 1996-10-10 Litton Systems Canada Limited Read-out circuit for active matrix imaging arrays
JP3432051B2 (ja) * 1995-08-02 2003-07-28 キヤノン株式会社 光電変換装置
US5744807A (en) * 1996-06-20 1998-04-28 Xerox Corporation Sensor array data line readout with reduced crosstalk
KR100262873B1 (ko) * 1996-08-13 2000-08-01 네드위치 리차드 집적 전기 셔터를 갖는 캐패시터 결합된 바이폴라 액티브픽셀 센서
US5760458A (en) * 1996-10-22 1998-06-02 Foveonics, Inc. Bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region
US5786623A (en) * 1996-10-22 1998-07-28 Foveonics, Inc. Bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region
EP0938810B1 (de) 1996-11-12 2002-08-28 California Institute Of Technology Halbleiterbildsensor mit onchip-verschlüsselung
JP4036956B2 (ja) * 1997-04-25 2008-01-23 セイコーインスツル株式会社 リニアイメージセンサ
US6529241B1 (en) 1998-02-27 2003-03-04 Intel Corporation Photodetecting device supporting saturation detection and electronic shutter
EP2287917B1 (de) * 1999-02-25 2016-05-25 Canon Kabushiki Kaisha Lichtempfangendes Element und photoelektrische Umwandlungsanordnung
US7324144B1 (en) * 1999-10-05 2008-01-29 Canon Kabushiki Kaisha Solid image pickup device, image pickup system and method of driving solid image pickup device
EP1091409B1 (de) 1999-10-05 2010-08-18 Canon Kabushiki Kaisha Festkörperbildaufnahmevorrichtung und Bildaufnahmesystem
JP3667186B2 (ja) * 2000-02-29 2005-07-06 キヤノン株式会社 信号転送装置及びそれを用いた固体撮像装置
JP3750502B2 (ja) * 2000-08-03 2006-03-01 ソニー株式会社 固体撮像装置およびカメラシステム
JP3962561B2 (ja) * 2001-07-12 2007-08-22 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム
US8038654B2 (en) * 2007-02-26 2011-10-18 Becton, Dickinson And Company Syringe having a hinged needle shield
JP2015056878A (ja) * 2013-09-13 2015-03-23 株式会社東芝 固体撮像装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
US4794443A (en) * 1984-05-28 1988-12-27 Canon Kabushiki Kaisha Semiconductor device and process for producing same
EP0455311B1 (de) * 1984-12-26 2001-03-14 Canon Kabushiki Kaisha Bildsensoranordnung
JPH0646655B2 (ja) * 1985-04-01 1994-06-15 キヤノン株式会社 固体撮像装置
CA1289242C (en) * 1985-11-13 1991-09-17 Shigetoshi Sugawa Device and method of photoelectrically converting light into electrical signal
JPH0812906B2 (ja) * 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置の製造方法
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置
JPH084129B2 (ja) * 1986-11-19 1996-01-17 キヤノン株式会社 光電変換装置
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
DE3856165T2 (de) * 1987-01-29 1998-08-27 Canon Kk Photovoltaischer Wandler
US4922138A (en) * 1987-05-25 1990-05-01 Canon Kabushiki Kaisha Scan circuit using a plural bootstrap effect for forming scan pulses
US4959723A (en) * 1987-11-06 1990-09-25 Canon Kabushiki Kaisha Solid state image pickup apparatus having multi-phase scanning pulse to read out accumulated signal
US4849470A (en) * 1988-10-31 1989-07-18 Advanced Protection Technologies, Inc. Polyurethane systems especially adapted for surge suppression
US5146339A (en) * 1989-11-21 1992-09-08 Canon Kabushiki Kaisha Photoelectric converting apparatus employing Darlington transistor readout
US5101252A (en) * 1989-12-14 1992-03-31 Canon Kabushiki Kaisha Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same
EP0473294B1 (de) * 1990-08-07 2004-09-22 Canon Kabushiki Kaisha Photoumwandlerschaltung

Also Published As

Publication number Publication date
DE69331357D1 (de) 2002-01-31
EP0559207B1 (de) 2001-12-19
EP0559207A1 (de) 1993-09-08
US5406332A (en) 1995-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee