DE3531789A1 - Traeger zur verwendung bei der aufbringung einer schicht auf eine silicium-halbleiterscheibe - Google Patents

Traeger zur verwendung bei der aufbringung einer schicht auf eine silicium-halbleiterscheibe

Info

Publication number
DE3531789A1
DE3531789A1 DE19853531789 DE3531789A DE3531789A1 DE 3531789 A1 DE3531789 A1 DE 3531789A1 DE 19853531789 DE19853531789 DE 19853531789 DE 3531789 A DE3531789 A DE 3531789A DE 3531789 A1 DE3531789 A1 DE 3531789A1
Authority
DE
Germany
Prior art keywords
carrier
semiconductor wafer
silicon
metallic
silicon semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853531789
Other languages
German (de)
English (en)
Other versions
DE3531789C2 (enExample
Inventor
Kichihei Sato
Syunkichi Sekikawa Niigata Sato
Teruyasu Sagamihara Kanagawa Tamamizu
Takashi Yamagata Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of DE3531789A1 publication Critical patent/DE3531789A1/de
Application granted granted Critical
Publication of DE3531789C2 publication Critical patent/DE3531789C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
DE19853531789 1984-09-13 1985-09-06 Traeger zur verwendung bei der aufbringung einer schicht auf eine silicium-halbleiterscheibe Granted DE3531789A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59191969A JPS6169116A (ja) 1984-09-13 1984-09-13 シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター

Publications (2)

Publication Number Publication Date
DE3531789A1 true DE3531789A1 (de) 1986-03-20
DE3531789C2 DE3531789C2 (enExample) 1991-06-06

Family

ID=16283453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853531789 Granted DE3531789A1 (de) 1984-09-13 1985-09-06 Traeger zur verwendung bei der aufbringung einer schicht auf eine silicium-halbleiterscheibe

Country Status (5)

Country Link
US (1) US4710428A (enExample)
JP (1) JPS6169116A (enExample)
DE (1) DE3531789A1 (enExample)
FR (1) FR2571543B1 (enExample)
GB (1) GB2164357B (enExample)

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JPH0768066B2 (ja) * 1987-12-25 1995-07-26 イビデン株式会社 耐熱性複合体及びその製造方法
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JPH0834187B2 (ja) * 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5098494A (en) * 1989-05-23 1992-03-24 Mcnc Bonding of ceramic parts
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
US5162277A (en) * 1990-10-18 1992-11-10 Shell Oil Company Olefin polymerization catalyst
US5146028A (en) * 1990-10-18 1992-09-08 Shell Oil Company Olefin polymerization catalyst and process of polymerization
US5510413A (en) * 1991-12-20 1996-04-23 Shell Polypropylene Company Polymer compositions
NL9300389A (nl) * 1993-03-04 1994-10-03 Xycarb Bv Substraatdrager.
JP3563789B2 (ja) 1993-12-22 2004-09-08 キヤノン株式会社 電子写真感光体の製造方法及び該製造方法に用いられる治具
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
JPH09235161A (ja) * 1996-03-01 1997-09-09 Ngk Insulators Ltd 耐食性に優れたＳｉ−ＳｉＣ質焼結体およびそれからなる窯道具ならびに窯炉の内張材、およびこれらを用いた窯炉
US5837058A (en) * 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
DE19903798A1 (de) * 1999-02-01 2000-08-10 Angew Solarenergie Ase Gmbh Verfahren und Anordnung zur Wärmebehandlung von flächigen Gegenständen
DE10125675C1 (de) 2001-05-25 2002-10-02 Schott Glas Verfahren zur Aufheizung von Substraten
JP3715228B2 (ja) * 2001-10-29 2005-11-09 大日本スクリーン製造株式会社 熱処理装置
WO2003062283A1 (en) * 2002-01-25 2003-07-31 Reliance Industries Limited An olefin polymerisation titanium catalyst
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
JP2005340043A (ja) * 2004-05-28 2005-12-08 Sumitomo Electric Ind Ltd 加熱装置
US20080110402A1 (en) * 2006-11-10 2008-05-15 Saint-Gobain Ceramics & Plastics, Inc. Susceptor and method of forming a led device using such susceptor
US20090325367A1 (en) * 2008-05-30 2009-12-31 Alta Devices, Inc. Methods and apparatus for a chemical vapor deposition reactor
US8801857B2 (en) * 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
KR20130049080A (ko) * 2011-11-03 2013-05-13 삼성디스플레이 주식회사 회전식 박막 증착 장치 및 그것을 이용한 박막 증착 방법
CN111446185A (zh) 2019-01-17 2020-07-24 Asm Ip 控股有限公司 通风基座
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
TWI845682B (zh) 2019-05-22 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 工件基座主體
EP3983572A4 (en) 2019-06-13 2023-06-28 Alliance for Sustainable Energy, LLC Nitrogen-enabled high growth rates in hydride vapor phase epitaxy
KR20220037437A (ko) * 2019-07-25 2022-03-24 에이지씨 가부시키가이샤 적층 부재
WO2021015059A1 (ja) * 2019-07-25 2021-01-28 Ａｇｃ株式会社 積層部材
CN114430733B (zh) * 2019-10-02 2023-05-09 日本碍子株式会社 耐火物
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
TWI888578B (zh) 2020-06-23 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座及反應腔室
USD1031676S1 (en) 2020-12-04 2024-06-18 Asm Ip Holding B.V. Combined susceptor, support, and lift system
TW202237395A (zh) * 2021-01-20 2022-10-01 日商Ａｇｃ股份有限公司 積層構件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340110A (en) * 1962-02-02 1967-09-05 Siemens Ag Method for producing semiconductor devices
DE1521601A1 (de) * 1965-05-26 1969-09-18 Westinghouse Electric Corp Vorrichtung zum epitaktischen Abscheiden von Silizium
US3925577A (en) * 1972-11-24 1975-12-09 Westinghouse Electric Corp Silicon carbide coated graphite members and process for producing the same

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US2938807A (en) * 1957-08-13 1960-05-31 James C Andersen Method of making refractory bodies
US3079316A (en) * 1958-05-22 1963-02-26 Minnesota Mining & Mfg Thermally resistant articles and method for their fabrication
US3205043A (en) * 1962-04-04 1965-09-07 Carborundum Co Cold molded dense silicon carbide articles and method of making the same
DE1297080B (de) * 1964-02-21 1969-06-12 Siemens Ag Verfahren zum Herstellen duenner Schichten aus metallischen und/oder halbleitenden Stoffen auf einem Traeger
GB1180918A (en) * 1966-06-10 1970-02-11 Atomic Energy Authority Uk Improvements in or relating to the Manufacture of Dense Bodies of Silicon Carbide.
DE1769520A1 (de) * 1968-06-05 1972-03-02 Siemens Ag Verfahren zum epitaktischen Abscheiden von kristallinem Material aus der Gasphase,insbesondere fuer Halbleiterzwecke
DE1924997A1 (de) * 1969-05-16 1970-11-19 Siemens Ag Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
NL7206877A (enExample) * 1972-05-20 1973-11-22
JPS5233895B2 (enExample) * 1972-06-07 1977-08-31
NL7209297A (enExample) * 1972-07-01 1974-01-03
US3998646A (en) * 1974-11-11 1976-12-21 Norton Company Process for forming high density silicon carbide
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
JPS6024290B2 (ja) * 1977-06-24 1985-06-12 川崎重工業株式会社 ２サイクルエンジンの吹返し防止装置
US4226914A (en) * 1978-05-19 1980-10-07 Ford Motor Company Novel spraying composition, method of applying the same and article produced thereby
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
JPS5832070A (ja) * 1981-08-21 1983-02-24 信越化学工業株式会社 高密度炭化けい素焼結体の製造方法
GB2130192B (en) * 1982-10-28 1987-01-07 Toshiba Ceramics Co Silicon carbide-based molded member for use in semiconductor manufacture
JPS59222922A (ja) * 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
GB8323994D0 (en) * 1983-09-07 1983-10-12 Atomic Energy Authority Uk Reaction-bonded silicon carbide artefacts

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340110A (en) * 1962-02-02 1967-09-05 Siemens Ag Method for producing semiconductor devices
DE1521601A1 (de) * 1965-05-26 1969-09-18 Westinghouse Electric Corp Vorrichtung zum epitaktischen Abscheiden von Silizium
US3925577A (en) * 1972-11-24 1975-12-09 Westinghouse Electric Corp Silicon carbide coated graphite members and process for producing the same

Also Published As

Publication number Publication date
GB8522402D0 (en) 1985-10-16
GB2164357A (en) 1986-03-19
JPS6169116A (ja) 1986-04-09
DE3531789C2 (enExample) 1991-06-06
FR2571543A1 (fr) 1986-04-11
US4710428A (en) 1987-12-01
GB2164357B (en) 1988-05-11
FR2571543B1 (fr) 1994-05-13

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee