DE3517965A1 - Verfahren zur herstellung einer elektrischen schaltung in hybridtechnik - Google Patents
Verfahren zur herstellung einer elektrischen schaltung in hybridtechnikInfo
- Publication number
- DE3517965A1 DE3517965A1 DE19853517965 DE3517965A DE3517965A1 DE 3517965 A1 DE3517965 A1 DE 3517965A1 DE 19853517965 DE19853517965 DE 19853517965 DE 3517965 A DE3517965 A DE 3517965A DE 3517965 A1 DE3517965 A1 DE 3517965A1
- Authority
- DE
- Germany
- Prior art keywords
- adhesive
- protective layer
- bonding
- component
- conductor tracks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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Description
- Verfahren zur Herstellung einer elektrischen
- Schaltung in Hybridtechnik Stand der Technik Die Erfindung geht aus von einem Verfahren zur Herstellung einer elektrischen Schaltung in Hybridtechnik nach der Gattung des Hauptanspruchs. Derartige Schaltungen sind grundsätzlich bekannt. Zur Sicherung einer gleichbleibenden Qualität der Bondverbindungen bestehen dabei mindestens die Bondflächen aus Edelmetall, vorzugsweise aus Gold, weil dieses unempfindlich ist gegenüber nahezu allen während des Aushärteprozesses der Kleber auftretenden physikalischen und chemischen Vorgängen und gegenüber den beim Aushärten von den Klebern abgegebenen Stoffen. Unedlere Metalle wie z.B. Kupfer oxydieren in Gegenwart von Luftsauerstoff bei den erhöhten Temperaturen des Aushärteprozesses, so daß eine Schutzgasatmosphäre erforderlich wäre. Zusätzlich treten in der Umgebung der Klebestellen Reaktionen unedler Metalle mit aus den Klebern ausgasenden Substanzen auf, welche die Bondfähigkeit der Leiterbahnen wesentlich herabsetzen und auch durch erhöhten Schutzgasdurchsatz oder durch Evakuieren des Klebers vor oder während des Aushärtens nicht verhindert werden können.
- Eine naßchemische Reinigung der für die Bondvorgänge vorgesehenen Oberflächen bei Verwendung unedler Metalle ist in Regel ebenfalls nicht möglich wegen der aufgebrachten elektronischen Bauelemente. Aufgabe der Erfindung ist es daher, ein Verfahren zu entwickeln, welches es gestattet, elektrische Bauelemente wie Halbleiter-, Widerstands- und/ oder Kapazitätschips in einem Leiterbahnnetzwerk aus Kupfer oder anderen unedlen, bondfähigen Metallen mittels eines Klebers zu befestigen, ohne daß die Bondfähigkeit der Oberflächen aus unedlem Metall durch den Aushärteprozess des Klebers beeinträchtigt wird.
- Vorteile der Erfindung Das erfindungsgemäße Verfahren mit den kennzeichnenden Merkmalen des Hauptanspruches hat den Vorteil, daß es mit einfachen Verfahrensschritten möglich ist, die Bondfähigkeit von aus unedlen Metallen bestehenden Oberflächen, insbesondere Leiterbahnen und Anschlußflächen, über den gesamten Herstellung- und Montageprozess einer elektrischen Schaltung in Hybridtechnik zu sichern. Die vorgeschlagenen Schutzschichten sind leicht aufzubringen und die Herstellung einer Schutzgasatmosphäre während des Aushärteprozesses von Klebern, insbesondere von Epoxy-Klebern, welche ohnehin nur bedingt wirksam ist, kann entfallen.
- Durch die in den Unteransprüchen aufgeführten Maßnahmen sind vorteilhafte Weiterbildungen und Verbesserungen des im Hauptanspruch angegebenen Verfahrens möglich. Insbesondere ist es vorteilhaft, die Schutzschichten aus einem Fotolack zu bilden, welcher vor dem Aufkleben eines oder mehrerer Bauelemente flächenförmig auf das ganze Substrat aufgebracht und an den Klebestellen zunächst selektiv, vorzugsweise durch Belichten und Entwickeln, entfernt wird.
- Nach dem Aufkleben des Bauelementes kann ein Fotolack als Schutzschicht entweder nochmals selektiv entfernt werden zur Durchführung weiterer Klebevorgänge oder anderer Bearbeitungsvorgänge oder er kann in einfacher Weise, insbesondere durch ein organisches Lösungsmittel, vollständig entfernt werden. Man erreicht hierbei also, daß während des Aufklebens der Bauelemente und während der Wärmbehandlung des Klebers keine für den Bondvorgang schädliche Reaktionen an den Oberflächen aus unedlem Metall auftreten, welche den Bondvorgang negativ beeinträchtigen könnten. Eine zweckmäßige Alternative zur ganzflächigen Beschichtung besteht in der selektiven Aufbringung einer Schutzschicht durch Siebdruck nur auf die abzudeckenden Bereiche der elektrischen Schaltung, wobei die Schutzschicht vorzugsweise aus einem Lötstopplack gebildet wird.
- Als Substrat dient vorzugsweise ein Siliciumsubstrat, als unedle Leiterbahnen und Anschlußflächen eignen sich insbesondere solche aus Kupfer. Als Kleber dienen vorzugsweise 0 Epoxy-Kleber, welche bei Temperaturen zwischen 100 C und 400 C rasch und unproblematisch aushärtbar sind. Vorzugsweise wird, insbesondere zur Beschleunigung des Verfahrens, die Schutzschicht ebenfalls einer Wärmebehandlung zum Vortrocknen unterworfen, welche bei Temperaturen unter ca.
- 800C erfolgt.
- Die Bondverbindungen werden vorzugsweise durch Schweißen mittels Thermokompression oder mittels Ultraschall hergestellt. Als elektrische Verbindungen zwischen den Bauelementen und den Leiterbahnen oder sonstwelchen Oberflächen aus Kupfer dienen vorzugsweise Bond-Drähte aus Gold. Unter unedlen, bondfähigen Metallen im Sinne der Erfindung sind solche Metalle zu verstehen, welche in der elektrochemischen Spannungsreihe Normalpotentiale gegenüber Wasserstoff von weniger als + 0,6 V besitzen. Hierzu zählen bei dem erfindungsgemäßen Verfahren zur Herstellung einer elektrischen Schaltung in Hybridtechnik insbesondere Kupfer und Aluminium.
- Zeichnung Ein Ausführungsbeispiel einer nach dem erfindungsgemäßen Verfahren hergestellen elektrischen Schaltung ist in der Zeichnung dargestellt und in der nachfolgenden Beschreibung näher erläutert. Die Figuren 1 bis 5 zeigen verschiedene Stadien des Verfahrensablaufes.
- Beschreibung des Ausführungsbeispieles In den Figuren ist mit 10 ein Substrat bezeichnet, welches vorzugsweise aus Silicium besteht. Stattdessen kann auch ein kupferkaschiertes Epoxy-Material verwendet werden. Auf dem Substrat 10 verlaufen Leiterbahnen 11, dazwischen ist eine Anschlußfläche 12 dargestellt.
- Auf das gesamte Substrat 10 ist, die Leiterbahnen und die Anschlußfläche überdeckend, eine Schutzschicht 13 aufgebracht, wie aus Figur 1 ersichtlich. Mittels eines Klebers 14 wird auf der Anschlußfläche 12 ein Bauelement 15 befestigt (Figuren 3 bis 5). Das Bauelement 15 ist mittels Bond-Drähten 16 mit Oberflächen 17 auf den Leiterbahnen 11 verbunden.
- Das erfindungsgemäße Verfahren wird folgendermaßen durchgeführt.
- Auf das Substrat 10, die Leiterbahnen 11 und die Anschlußfläche 12 wird ganzflächig eine Schutzschicht 13 aus Fotolack aufgebracht und bei einer Temperatur unterhalb 800c vorgetrocknet. Als Fotolack dient beispielsweise das Erzeugnis AZ 1350 J Der Firma SHIPLEY. Der Lack kann einseitig oder beidseitig aufgebracht werden, wenn letzteres im Tauchverfahren einfacher möglich ist. Figur 1 zeigt das Substrat mit der aufgebrachten und vorgetrockneten Schutzschicht.
- Je nach der geforderten Abbildungsgenauigkeit der Schutzschicht kann auch selektiv ein Lötstopplack im Siebdruckverfahren aufgebracht werden. Die Anordnung würde dann etwa derjenigen in Figur 2 entsprechen, wobei selektiv nur die abzudeckenden Bereiche der Leiterbahnen 11 mit Lack überzogen sind. Als Lötstopplack kann beispielsweise das Erzeugnis WEPELAN SD 2154 P, blau, der Firma W. Peters KG verwendet werden.
- Figur 2 zeigt den zweiten Verfahrensschritt nach dem ganzflächigen Aufbringen der Schutzschicht gemäß Figur 1. An den Stellen, an denen ein Bauelement 15 eingeklebt werden soll, ist der Fotolack der Schutzschicht 13 nach selektiver Belichtung durch Entwicklerflüssigkeit herausgelöst worden.
- Die Anschlußfläche 12 liegt also frei zum Aufkleben eines Bauelementes 15, während die Oberflächen 17 der Leiterbahnen 11 mit der Schutzschicht 13 weiterhin bedeckt sind.
- Figur 3 zeigt den Verfahrensstand, bei dem auf die Anschlußfläche 12 mittels eines Epoxy-Klebers als Bauelement 15 ein Halbleiter-IC aufgeklebt und der Kleber ausgehärtet worden ist. Das Aushärten des Klebers erfolgt bei Temperaturen zwischen 100 C und 400 C, vorzugsweise bei Temperaturen oberhalb 120 C, wobei generell die Angaben des Herstellers des Klebers zu beachten sind. Außer dem dargestellten Bauelement 15 können selbstverständlich weitere Bauelemente in die Schaltung eingeklebt und andere elektronische Bauteile in dem Silicium-Substrat 10 integriert sein.
- Figur 4 zeigt den Verfahrensstand, bei dem mittels eines organischen Lösungsmittels der Fotolack der Schutzschicht 13 vollständig entfernt worden ist. Soll der Fotolack nur partiell entfernt werden, so kann dies durch erneutes Belichten und Entwickeln der entsprechenden Bereiche gescheren.
- Figur 5 zeigt die fertige, nach dem erfindungsgemäßen Verfahren hergestellte elektrische Schaltung, bei der beispielsweise ein Halbleiter-IC als Bauelement 15 durch Bond-Drähte 16 aus Gold mit den Leiterbahnen 11 aus Kupfer verbunden ist. Die bondfähigen, aber ansonsten beim Aushärten des Klebers angegriffenen Oberflächen des unedlen Metalls Kupfer sind durch das erfindungsgemäße Verfahren während des gesamten Klebeprozesses geschützt, so daß die Bondfähigkeit nicht beeinträchtigt und die preiswerten und elektrisch gut leitfähigen Leiterbahnen aus Kupfer verwendet werden können. Die Anwendung des erfindungsgemäßen Verfahrens ist nicht auf das beschriebene Ausführungsbeispiel beschränkt, insbesondere können andere Lacke oder Substanzen für die Schutzschicht 13 und andere unedle Metalle als Leiterbahnen 11 verwendet werden. Neben Kupfer eignen sich insbesondere Aluminium-Leiterbahnen, auf denen vorzugsweise Bond-Drähte ebenfalls aus Aluminium befestigbar sind.
Claims (9)
- Ansprüche Verfahren zur Herstellung einer elektrischen Schaltung in Hybridtechnik, wobei wenigstens ein elektrisches Bauelement (15), insbesondere ein Halbleiter-, Widerstands-und/oder Kapazitätschip, mittels eines Klebers (14) in einem Leiterbahnnetzwerk befestigt und durch Bonden mit wenigstens einer Leiterbahn (11) und/oder einem weiteren Bauelement (15) elektrisch verbunden wird, dadurch gekennzeichnet, daß die für den Bondvorgang bestimmten Flächen (11, 17) aus einem unedlen, bonfähigen Metall gebildet und während des Klebevorgangs und des bei erhöhter Temperatur durchgeführten Aushärtevorgangs des Klebers (14) durch eine Schutzschicht (13) abgedeckt werden, welche vor dem Bondvorgang entfernt wird.
- 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Schutzschicht (13) aus einem Fotolack gebildet wird, welcher vor dem Aufkleben des Bauelementes (15) flächenförmig auf ein Substrat (10) mit Leiterbahnen (11) und/oder Anschlußflächen (12) aufgebracht, an den Klebestellen zunächst selektiv entfernt und nach dem Aufkleben des Bauelementes (15) und der Wärmebehandlung des Klebers (14) vollends oder selektiv wieder entfernt wird.
- 3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß die selektive Entfernung des Fotolackes (15) durch Belichten und Entwickeln erfolgt, während die abschließende vollständige Entfernung des Lackes durch ein organisches Lösungsmittel bewirkt wird.
- 4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Schutzschicht (15) selektiv durch Siebdruck eines Lackes, insbesondere eines Lötstopp-Lackes, aufgebracht wird.
- 5. Verfahren nach einem der vorhergehenden Ansprüche, gekennzeichnet durch die Verwendung eines Silicium-Substrates (10) mit Leiterbahnen (11) und/oder Anschlußflächen (12) aus Kupfer.
- 6. Verfahren nach einem der vorhergehenden Ansprüche, gekennzeichnet, durch die Verwendung eines Epoxy-Klebers (14), welcher bei Temperaturen zwischen 1000C und 4000C ausgehärtet wird.
- 7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Bondverbindungen durch Schweißen mittels Thermokompression oder Ultraschall hergestellt werden.
- 8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die elektrischen Verbindungen zwischen dem Bauelement (15) und Leiterbahnen (11) aus Kupfer durch Bond-Drähte (16) aus Gold hergestellt werden.
- 9. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Schutzschicht (13) bei einer Temperatur unterhalb 800C vorgetrocknet wird.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853517965 DE3517965A1 (de) | 1985-05-18 | 1985-05-18 | Verfahren zur herstellung einer elektrischen schaltung in hybridtechnik |
PCT/DE1986/000011 WO1986007191A1 (en) | 1985-05-18 | 1986-01-15 | Process for manufacturing an electric circuit using hybrid technology |
JP61500710A JPS63500344A (ja) | 1985-05-18 | 1986-01-15 | ハイブリッド回路で電気回路を製造する方法 |
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DE19853517965 DE3517965A1 (de) | 1985-05-18 | 1985-05-18 | Verfahren zur herstellung einer elektrischen schaltung in hybridtechnik |
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DE19853517965 Withdrawn DE3517965A1 (de) | 1985-05-18 | 1985-05-18 | Verfahren zur herstellung einer elektrischen schaltung in hybridtechnik |
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Country | Link |
---|---|
JP (1) | JPS63500344A (de) |
DE (1) | DE3517965A1 (de) |
WO (1) | WO1986007191A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998054760A1 (de) * | 1997-05-28 | 1998-12-03 | Robert Bosch Gmbh | Verfahren zur herstellung elektrischer baugruppen und elektrische baugruppe |
DE102008058047B4 (de) * | 2008-11-18 | 2013-11-07 | Auto-Kabel Management Gmbh | Verbindung von elektrischen Leitungen mittels Ultraschallschweißen |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950021293A (ko) * | 1993-12-03 | 1995-07-26 | 빈센트 비. 인그라시아 | 반도체 다이를 다이 패드에 부착하도록 산화물층을 이용한 회로 및 방법 |
JP3736001B2 (ja) * | 1996-02-29 | 2006-01-18 | 株式会社デンソー | 電子部品の実装方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1982003960A1 (en) * | 1981-04-29 | 1982-11-11 | Melvin L Goforth | Electronic assembly process and apparatus and compositions therefor |
EP0142783A2 (de) * | 1983-11-11 | 1985-05-29 | Kabushiki Kaisha Toshiba | Verfahren zum Herstellen einer integrierten Hybridschaltung |
EP0180091A2 (de) * | 1984-10-30 | 1986-05-07 | International Business Machines Corporation | Verfahren zum selektiven Absetzen metallischer Schichten auf einem Substrat |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3838984A (en) * | 1973-04-16 | 1974-10-01 | Sperry Rand Corp | Flexible carrier and interconnect for uncased ic chips |
JPS5933894A (ja) * | 1982-08-19 | 1984-02-23 | 電気化学工業株式会社 | 混成集積用回路基板の製造法 |
EP0139063A1 (de) * | 1983-10-24 | 1985-05-02 | SINTRA-ALCATEL Société Anonyme dite: | Verfahren zum Ersetzen eines zu den Stromführungspuren eines tragenden Substrats verbundenen elektronischen Unterteiles |
-
1985
- 1985-05-18 DE DE19853517965 patent/DE3517965A1/de not_active Withdrawn
-
1986
- 1986-01-15 JP JP61500710A patent/JPS63500344A/ja active Pending
- 1986-01-15 WO PCT/DE1986/000011 patent/WO1986007191A1/de unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1982003960A1 (en) * | 1981-04-29 | 1982-11-11 | Melvin L Goforth | Electronic assembly process and apparatus and compositions therefor |
EP0142783A2 (de) * | 1983-11-11 | 1985-05-29 | Kabushiki Kaisha Toshiba | Verfahren zum Herstellen einer integrierten Hybridschaltung |
EP0180091A2 (de) * | 1984-10-30 | 1986-05-07 | International Business Machines Corporation | Verfahren zum selektiven Absetzen metallischer Schichten auf einem Substrat |
Non-Patent Citations (2)
Title |
---|
Hg. F.N. Sinnedurai: "Handbook of Microelectro- nics Packaging and Interconnection Technologies" Verf. Electrochemical Publications Ltd., Ayr Schottland (1985), S. 58-75, 89, 192-200 * |
Proc. ISHM 4th European Hybrid Microelectronics Conference (1983) S. 259-266 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998054760A1 (de) * | 1997-05-28 | 1998-12-03 | Robert Bosch Gmbh | Verfahren zur herstellung elektrischer baugruppen und elektrische baugruppe |
DE102008058047B4 (de) * | 2008-11-18 | 2013-11-07 | Auto-Kabel Management Gmbh | Verbindung von elektrischen Leitungen mittels Ultraschallschweißen |
Also Published As
Publication number | Publication date |
---|---|
WO1986007191A1 (en) | 1986-12-04 |
JPS63500344A (ja) | 1988-02-04 |
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