KR950021293A - 반도체 다이를 다이 패드에 부착하도록 산화물층을 이용한 회로 및 방법 - Google Patents

반도체 다이를 다이 패드에 부착하도록 산화물층을 이용한 회로 및 방법 Download PDF

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Publication number
KR950021293A
KR950021293A KR1019940029380A KR19940029380A KR950021293A KR 950021293 A KR950021293 A KR 950021293A KR 1019940029380 A KR1019940029380 A KR 1019940029380A KR 19940029380 A KR19940029380 A KR 19940029380A KR 950021293 A KR950021293 A KR 950021293A
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South Korea
Prior art keywords
die
oxide layer
die pad
pad
semiconductor
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KR1019940029380A
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English (en)
Inventor
마틴 버그 하워드
산카라나라야난가네산
Original Assignee
빈센트 비. 인그라시아
모토로라 인코포레이티드(Motorola, Inc)
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Publication of KR950021293A publication Critical patent/KR950021293A/ko

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Abstract

반도체 다이(32)를 반도체 패키지(12)의 다이 패드에 부착하도록 반도체 패키지의 다이 패드(26)의 상부층상에 부착재(30)와 산화물층(28)이 증착된다. 산화물층은 다이 패드의 상부에 증착된다. 산화물층은 화학 성장 산화 제1동이다. 폴리머 재료와 같은 다이 부착 접착제(30)는 산화물층의 상부에 증착되며, 반도체 다이는 다이부착 접착제로 다이 패드에 부착된다. 산화물층은 다이 패드에 반도체 다이의 우수한 접착력을 제공하여 반도체 다이가 다이 패드에서 이층되는 것을 방지한다.

Description

반도체 다이를 다이 패드에 부착하도록 산화물층을 이용한 회로 및 방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 플라스틱볼 그리드 어레이 패키지로 다이패드에 부착한 반도체 다이를 도시하는 도면이다.

Claims (5)

  1. 회로 패키지(12)의 표면상에 에칭된 다이패드(26)와, 상기 다이 패드의 표면에 배치된 산화물층(28)과, 상기 산화물층의 상부에 배치된 다이 부착 접착제(30)와, 상기 다이부착 접착제와 상기 산화물층을 통해 상기 다이패드에 결합된 반도체 다이(32)을 포함하는 것을 특징으로 하는 회로 패키지.
  2. 제1항에 있어서, 상기 산화물층은 산화 제1동을 포함하는 것을 특징으로 하는 회로 패키지.
  3. 제2항에 있어서, 상기 산화물층은 산화 제2동을 포함하는 것을 특징으로 하는 회로 패키지.
  4. 기판(12)의 표면에서 다이 패드(26)를 에칭하는 단계와, 상기 다이 패드의 상부에 산화물층(28)을 증착하는 단계와, 상기 산화물층의 상부에 다이 부착 접착제(30)를 증착하는 단계와, 상기 다이 부착 접착제가 상기 산화물층을 통해 상기 다이 패드에 반도체 다이를 결합하는 단계로 이루어진 것을 특징으로 하는 반도체 다이를 다이패드에 결합하는 방법.
  5. 제4항에 있어서, 상기 기판위에 포토레지스트를 증착하는 단계와, 상기 포토레지스트의 개구를 상기 다이패드위에 형성하는 단계와, 상기 기판을 화학적 산화 공정에 노출하는 단계와, 상기 기판에서 상기 포토레지스트를 제거하는 단계를 추가로 포함하는 것을 특징으로 하는 반도체 다이를 다이 패드에 결합하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940029380A 1993-12-03 1994-11-10 반도체 다이를 다이 패드에 부착하도록 산화물층을 이용한 회로 및 방법 KR950021293A (ko)

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US16101893A 1993-12-03 1993-12-03
US161,018 1993-12-03

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KR950021293A true KR950021293A (ko) 1995-07-26

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KR100239406B1 (ko) * 1996-12-27 2000-01-15 김영환 표면 실장형 반도체 패키지 및 그 제조 방법

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FR2305025A1 (fr) * 1975-03-21 1976-10-15 Thomson Csf Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element
US3996548A (en) * 1975-11-19 1976-12-07 Honeywell Inc. Photodetector-to-substrate bonds
JPS61253841A (ja) * 1985-05-07 1986-11-11 Toshiba Corp 樹脂封止型半導体装置
DE3517965A1 (de) * 1985-05-18 1986-11-20 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur herstellung einer elektrischen schaltung in hybridtechnik

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JPH0837197A (ja) 1996-02-06
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