FR2305025A1 - Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element - Google Patents
Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel elementInfo
- Publication number
- FR2305025A1 FR2305025A1 FR7508941A FR7508941A FR2305025A1 FR 2305025 A1 FR2305025 A1 FR 2305025A1 FR 7508941 A FR7508941 A FR 7508941A FR 7508941 A FR7508941 A FR 7508941A FR 2305025 A1 FR2305025 A1 FR 2305025A1
- Authority
- FR
- France
- Prior art keywords
- beryllium
- layer
- molybdenum
- gold
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7508941A FR2305025A1 (fr) | 1975-03-21 | 1975-03-21 | Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7508941A FR2305025A1 (fr) | 1975-03-21 | 1975-03-21 | Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2305025A1 true FR2305025A1 (fr) | 1976-10-15 |
FR2305025B1 FR2305025B1 (fr) | 1979-02-23 |
Family
ID=9152914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7508941A Granted FR2305025A1 (fr) | 1975-03-21 | 1975-03-21 | Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2305025A1 (fr) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396263A1 (fr) * | 1977-06-29 | 1979-01-26 | Semi Alloys Inc | Plaque de transmission de la chaleur, metallique, composite et prefabriquee |
EP0052920A2 (fr) * | 1980-09-25 | 1982-06-02 | Texas Instruments Incorporated | Système d'interconnexion pour circuit électronique |
DE3314996A1 (de) * | 1982-04-27 | 1983-10-27 | Compagnie d'Informatique Militaire Spatiale et Aéronautique, 75008 Paris | Zusammengesetztes substrat mit hoher waermeleitung und verwendung desselben fuer gehaeuse von halbleiter-schaltanordnungen |
EP0139205A2 (fr) * | 1983-09-28 | 1985-05-02 | Siemens Aktiengesellschaft | Procédé pour fabriquer des composants semi-conducteurs ayant un substrat en métal |
FR2634064A1 (fr) * | 1988-07-05 | 1990-01-12 | Thomson Csf | Composant electronique a couche de conductivite thermique elevee |
EP0656648A1 (fr) * | 1993-12-03 | 1995-06-07 | Motorola Inc. | Circuit et procédé d'utilisation d'une couche d'oxyde pour relier un dé semi-conducteur à une plage de contact |
DE10111185A1 (de) * | 2001-03-08 | 2002-06-13 | Siemens Ag | Keramik-Metall-Substrat |
DE10103294C1 (de) * | 2001-01-25 | 2002-10-31 | Siemens Ag | Träger mit einer Metallfläche und mindestens ein darauf angeordneter Chip, insbesondere Leistungshalbleiter |
DE10161101A1 (de) * | 2001-12-12 | 2003-03-13 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zu seiner Herstellung |
-
1975
- 1975-03-21 FR FR7508941A patent/FR2305025A1/fr active Granted
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396263A1 (fr) * | 1977-06-29 | 1979-01-26 | Semi Alloys Inc | Plaque de transmission de la chaleur, metallique, composite et prefabriquee |
EP0052920A2 (fr) * | 1980-09-25 | 1982-06-02 | Texas Instruments Incorporated | Système d'interconnexion pour circuit électronique |
EP0052920A3 (en) * | 1980-09-25 | 1984-04-25 | Texas Instruments Incorporated | Electronic circuit interconnection system |
DE3314996A1 (de) * | 1982-04-27 | 1983-10-27 | Compagnie d'Informatique Militaire Spatiale et Aéronautique, 75008 Paris | Zusammengesetztes substrat mit hoher waermeleitung und verwendung desselben fuer gehaeuse von halbleiter-schaltanordnungen |
EP0139205A2 (fr) * | 1983-09-28 | 1985-05-02 | Siemens Aktiengesellschaft | Procédé pour fabriquer des composants semi-conducteurs ayant un substrat en métal |
EP0139205A3 (fr) * | 1983-09-28 | 1985-09-11 | Siemens Aktiengesellschaft | Procédé pour fabriquer des composants semi-conducteurs ayant un substrat en métal |
FR2634064A1 (fr) * | 1988-07-05 | 1990-01-12 | Thomson Csf | Composant electronique a couche de conductivite thermique elevee |
EP0656648A1 (fr) * | 1993-12-03 | 1995-06-07 | Motorola Inc. | Circuit et procédé d'utilisation d'une couche d'oxyde pour relier un dé semi-conducteur à une plage de contact |
DE10103294C1 (de) * | 2001-01-25 | 2002-10-31 | Siemens Ag | Träger mit einer Metallfläche und mindestens ein darauf angeordneter Chip, insbesondere Leistungshalbleiter |
US6864579B2 (en) | 2001-01-25 | 2005-03-08 | Siemens Aktiengesellschaft | Carrier with a metal area and at least one chip configured on the metal area |
DE10111185A1 (de) * | 2001-03-08 | 2002-06-13 | Siemens Ag | Keramik-Metall-Substrat |
DE10161101A1 (de) * | 2001-12-12 | 2003-03-13 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zu seiner Herstellung |
Also Published As
Publication number | Publication date |
---|---|
FR2305025B1 (fr) | 1979-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |