FR2305025A1 - Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element - Google Patents

Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element

Info

Publication number
FR2305025A1
FR2305025A1 FR7508941A FR7508941A FR2305025A1 FR 2305025 A1 FR2305025 A1 FR 2305025A1 FR 7508941 A FR7508941 A FR 7508941A FR 7508941 A FR7508941 A FR 7508941A FR 2305025 A1 FR2305025 A1 FR 2305025A1
Authority
FR
France
Prior art keywords
beryllium
layer
molybdenum
gold
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7508941A
Other languages
English (en)
Other versions
FR2305025B1 (fr
Inventor
Jacques Gremillet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7508941A priority Critical patent/FR2305025A1/fr
Publication of FR2305025A1 publication Critical patent/FR2305025A1/fr
Application granted granted Critical
Publication of FR2305025B1 publication Critical patent/FR2305025B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142Metallic substrates having insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026Bonding areas specifically adapted for layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR7508941A 1975-03-21 1975-03-21 Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element Granted FR2305025A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7508941A FR2305025A1 (fr) 1975-03-21 1975-03-21 Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7508941A FR2305025A1 (fr) 1975-03-21 1975-03-21 Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element

Publications (2)

Publication Number Publication Date
FR2305025A1 true FR2305025A1 (fr) 1976-10-15
FR2305025B1 FR2305025B1 (fr) 1979-02-23

Family

ID=9152914

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7508941A Granted FR2305025A1 (fr) 1975-03-21 1975-03-21 Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element

Country Status (1)

Country Link
FR (1) FR2305025A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396263A1 (fr) * 1977-06-29 1979-01-26 Semi Alloys Inc Plaque de transmission de la chaleur, metallique, composite et prefabriquee
EP0052920A2 (fr) * 1980-09-25 1982-06-02 Texas Instruments Incorporated Système d'interconnexion pour circuit électronique
DE3314996A1 (de) * 1982-04-27 1983-10-27 Compagnie d'Informatique Militaire Spatiale et Aéronautique, 75008 Paris Zusammengesetztes substrat mit hoher waermeleitung und verwendung desselben fuer gehaeuse von halbleiter-schaltanordnungen
EP0139205A2 (fr) * 1983-09-28 1985-05-02 Siemens Aktiengesellschaft Procédé pour fabriquer des composants semi-conducteurs ayant un substrat en métal
FR2634064A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Composant electronique a couche de conductivite thermique elevee
EP0656648A1 (fr) * 1993-12-03 1995-06-07 Motorola Inc. Circuit et procédé d'utilisation d'une couche d'oxyde pour relier un dé semi-conducteur à une plage de contact
DE10111185A1 (de) * 2001-03-08 2002-06-13 Siemens Ag Keramik-Metall-Substrat
DE10103294C1 (de) * 2001-01-25 2002-10-31 Siemens Ag Träger mit einer Metallfläche und mindestens ein darauf angeordneter Chip, insbesondere Leistungshalbleiter
DE10161101A1 (de) * 2001-12-12 2003-03-13 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zu seiner Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396263A1 (fr) * 1977-06-29 1979-01-26 Semi Alloys Inc Plaque de transmission de la chaleur, metallique, composite et prefabriquee
EP0052920A2 (fr) * 1980-09-25 1982-06-02 Texas Instruments Incorporated Système d'interconnexion pour circuit électronique
EP0052920A3 (en) * 1980-09-25 1984-04-25 Texas Instruments Incorporated Electronic circuit interconnection system
DE3314996A1 (de) * 1982-04-27 1983-10-27 Compagnie d'Informatique Militaire Spatiale et Aéronautique, 75008 Paris Zusammengesetztes substrat mit hoher waermeleitung und verwendung desselben fuer gehaeuse von halbleiter-schaltanordnungen
EP0139205A2 (fr) * 1983-09-28 1985-05-02 Siemens Aktiengesellschaft Procédé pour fabriquer des composants semi-conducteurs ayant un substrat en métal
EP0139205A3 (fr) * 1983-09-28 1985-09-11 Siemens Aktiengesellschaft Procédé pour fabriquer des composants semi-conducteurs ayant un substrat en métal
FR2634064A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Composant electronique a couche de conductivite thermique elevee
EP0656648A1 (fr) * 1993-12-03 1995-06-07 Motorola Inc. Circuit et procédé d'utilisation d'une couche d'oxyde pour relier un dé semi-conducteur à une plage de contact
DE10103294C1 (de) * 2001-01-25 2002-10-31 Siemens Ag Träger mit einer Metallfläche und mindestens ein darauf angeordneter Chip, insbesondere Leistungshalbleiter
US6864579B2 (en) 2001-01-25 2005-03-08 Siemens Aktiengesellschaft Carrier with a metal area and at least one chip configured on the metal area
DE10111185A1 (de) * 2001-03-08 2002-06-13 Siemens Ag Keramik-Metall-Substrat
DE10161101A1 (de) * 2001-12-12 2003-03-13 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
FR2305025B1 (fr) 1979-02-23

Similar Documents

Publication Publication Date Title
ES454530A1 (es) Un disipador de calor mejorado.
JPS57201058A (en) Insulated semiconductor device
FR2305025A1 (fr) Element de liaison reliant un dispositif semi-conducteur a son support et dispositif comportant un tel element
KR930018657A (ko) 반도체 소자의 제조방법
Ghate Some observations on the electromigration in aluminum films
GB1418278A (en) Integrated circuit devices
JPS5365088A (en) Semiconductor device
KR880014665A (ko) 반도체장치 및 그 제조방법
US3620692A (en) Mounting structure for high-power semiconductor devices
GB1358438A (en) Process for the manufacture of a semiconductor component or an integrated semiconductor circuit
JPS5640260A (en) Manufacture of semiconductor device
GB1246946A (en) Method of forming the electrode of a semiconductor device
GB989502A (en) Silicon-containing heating element bodies
GB1389326A (en) Method for producing thin film circuits
GB2140460A (en) Insulated metal substrates
JPS5429555A (en) Heat sink constituent
JPS6411378A (en) Formation of josephson element
JPS5763842A (en) Preparation of semiconductor integrated circuit
KR890005827A (ko) 자기 금속 박막층 제조방법
FR2149902A5 (en) Thermostatic element - having a metallic layer and a non-metallic layer formed electrochemically there from
JPS52147992A (en) Manufacture of semiconductor device
FR2297120A1 (fr) Lame de rasoir de structure stratifiee et son procede de fabrication
JPS5811112B2 (ja) 基板
JPS5422183A (en) Semiconductor displacement converter
JPS6421943A (en) Semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse