ES454530A1 - Un disipador de calor mejorado. - Google Patents

Un disipador de calor mejorado.

Info

Publication number
ES454530A1
ES454530A1 ES454530A ES454530A ES454530A1 ES 454530 A1 ES454530 A1 ES 454530A1 ES 454530 A ES454530 A ES 454530A ES 454530 A ES454530 A ES 454530A ES 454530 A1 ES454530 A1 ES 454530A1
Authority
ES
Spain
Prior art keywords
ceramic
thermal expansion
coefficient
heat sink
sink device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES454530A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA filed Critical Alcatel Espana SA
Publication of ES454530A1 publication Critical patent/ES454530A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
ES454530A 1975-12-23 1976-12-23 Un disipador de calor mejorado. Expired ES454530A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/643,740 US4025997A (en) 1975-12-23 1975-12-23 Ceramic mounting and heat sink device

Publications (1)

Publication Number Publication Date
ES454530A1 true ES454530A1 (es) 1977-12-16

Family

ID=24582083

Family Applications (1)

Application Number Title Priority Date Filing Date
ES454530A Expired ES454530A1 (es) 1975-12-23 1976-12-23 Un disipador de calor mejorado.

Country Status (3)

Country Link
US (1) US4025997A (es)
DE (1) DE2653271A1 (es)
ES (1) ES454530A1 (es)

Families Citing this family (52)

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JPS5471572A (en) * 1977-11-18 1979-06-08 Fujitsu Ltd Semiconductor device
DE2857170A1 (de) * 1977-11-18 1980-12-04 Fujitsu Ltd Semiconductor device
US4227036A (en) * 1978-09-18 1980-10-07 Microwave Semiconductor Corp. Composite flanged ceramic package for electronic devices
US4283464A (en) * 1979-05-08 1981-08-11 Norman Hascoe Prefabricated composite metallic heat-transmitting plate unit
US4385202A (en) * 1980-09-25 1983-05-24 Texas Instruments Incorporated Electronic circuit interconnection system
FR2495838A1 (fr) * 1980-12-05 1982-06-11 Cii Honeywell Bull Dispositif de refroidissement amovible pour supports de circuits integres
US4403828A (en) * 1981-06-01 1983-09-13 United Technologies Corporation Damage resistant coated laser mirror
JPS6038867B2 (ja) * 1981-06-05 1985-09-03 株式会社日立製作所 絶縁型半導体装置
JPS5861677A (ja) * 1981-10-09 1983-04-12 Toshiba Corp 半導体装置
JPS5875859A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd 半導体装置
CH660882A5 (de) * 1982-02-05 1987-05-29 Bbc Brown Boveri & Cie Werkstoff mit zweiweg-gedaechtniseffekt und verfahren zu dessen herstellung.
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS5946050A (ja) * 1982-09-09 1984-03-15 Narumi China Corp 半導体用セラミツクパツケ−ジ
DE3335184A1 (de) * 1983-09-28 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbausteinen
JPS6121983A (ja) * 1984-07-07 1986-01-30 工業技術院長 非酸化物系セラミックス―金属複合材料の製造方法
US4788627A (en) * 1986-06-06 1988-11-29 Tektronix, Inc. Heat sink device using composite metal alloy
DE3722119A1 (de) * 1987-07-03 1989-01-12 Siemens Ag Schaltungsmodul mit einem plattenfoermigen schaltungstraeger aus glas oder keramik
JPH01503744A (ja) * 1987-07-03 1989-12-14 ドドウコ・ゲーエムベーハー・ウント・コムパニー・ドクトル・オイゲン・デュルベヒテル 特に、電子パワーコンポーネンツのためのヒートシンクとしての使用のためのフラットボディ
DE3731624A1 (de) * 1987-09-19 1989-03-30 Asea Brown Boveri Ausgleichsronde fuer leistungshalbleitermodule
US4899208A (en) * 1987-12-17 1990-02-06 International Business Machines Corporation Power distribution for full wafer package
CA1316303C (en) * 1988-12-23 1993-04-20 Thijs Eerkes Composite structure
US4950554A (en) * 1989-05-30 1990-08-21 Amax Inc. Composite copper-molybdenum sheet
US4957821A (en) * 1989-05-30 1990-09-18 Amax Inc. Composite aluminum molybdenum sheet
US4957823A (en) * 1989-05-30 1990-09-18 Amax Inc. Composite sheet made of molybdenum and dispersion-strengthened copper
US5015803A (en) * 1989-05-31 1991-05-14 Olin Corporation Thermal performance package for integrated circuit chip
DE69013124T2 (de) * 1989-09-25 1995-05-04 Gen Electric Direktverbundene Metallsubstratstrukturen.
US5100740A (en) * 1989-09-25 1992-03-31 General Electric Company Direct bonded symmetric-metallic-laminate/substrate structures
ATE142371T1 (de) * 1989-12-12 1996-09-15 Sumitomo Spec Metals Verfahren zur herstellung eines wärmeleitenden mischmaterial
JP2505065B2 (ja) * 1990-10-04 1996-06-05 三菱電機株式会社 半導体装置およびその製造方法
US5188985A (en) * 1991-03-29 1993-02-23 Aegis, Inc. Surface mount device with high thermal conductivity
US5111277A (en) * 1991-03-29 1992-05-05 Aegis, Inc. Surface mount device with high thermal conductivity
JP3254001B2 (ja) * 1991-04-08 2002-02-04 ゼネラル・エレクトリック・カンパニイ 半導体モジュール用の一体化放熱器
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5773879A (en) * 1992-02-13 1998-06-30 Mitsubishi Denki Kabushiki Kaisha Cu/Mo/Cu clad mounting for high frequency devices
DE4240843A1 (de) * 1992-12-04 1994-06-09 Bosch Gmbh Robert Anordnung zur Verlustwärmeableitung bei Leistungshalbleiterbauelementen
JPH07105464B2 (ja) * 1992-12-04 1995-11-13 住友電気工業株式会社 半導体素子搭載用半導体装置
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5972737A (en) * 1993-04-14 1999-10-26 Frank J. Polese Heat-dissipating package for microcircuit devices and process for manufacture
US5613181A (en) * 1994-12-21 1997-03-18 International Business Machines Corporation Co-sintered surface metallization for pin-join, wire-bond and chip attach
US5886269A (en) * 1995-02-17 1999-03-23 Nippon Tungsten Co., Ltd. Substrate and heat sink for a semiconductor and method of manufacturing the same
US6129993A (en) * 1998-02-13 2000-10-10 Hitachi Metals, Ltd. Heat spreader and method of making the same
US6180241B1 (en) 1998-08-18 2001-01-30 Lucent Technologies Inc. Arrangement for reducing bending stress in an electronics package
US6114048A (en) * 1998-09-04 2000-09-05 Brush Wellman, Inc. Functionally graded metal substrates and process for making same
US6399892B1 (en) * 2000-09-19 2002-06-04 International Business Machines Corporation CTE compensated chip interposer
AT5972U1 (de) * 2002-03-22 2003-02-25 Plansee Ag Package mit substrat hoher wärmeleitfähigkeit
JP3862737B1 (ja) * 2005-10-18 2006-12-27 栄樹 津島 クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板
US8080872B2 (en) * 2008-06-16 2011-12-20 Hcc Aegis, Inc. Surface mount package with high thermal conductivity
US8143717B2 (en) * 2008-06-16 2012-03-27 Hcc Aegis, Inc. Surface mount package with ceramic sidewalls
JP2011011366A (ja) * 2009-06-30 2011-01-20 Sumitomo Electric Ind Ltd 金属積層構造体の製造方法
JP5583985B2 (ja) * 2010-02-19 2014-09-03 住友電気工業株式会社 金属積層構造体
US9252734B2 (en) * 2012-09-14 2016-02-02 National Instruments Corporation High frequency high isolation multichip module hybrid package

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2697130A (en) * 1950-12-30 1954-12-14 Westinghouse Electric Corp Protection of metal against oxidation
US2993271A (en) * 1953-08-12 1961-07-25 Litton Industries Inc Method of producing copper coated metal sheet stock
US3147547A (en) * 1960-03-10 1964-09-08 Gen Electric Coating refractory metals
US3620692A (en) * 1970-04-01 1971-11-16 Rca Corp Mounting structure for high-power semiconductor devices
US3780795A (en) * 1972-06-19 1973-12-25 Rca Corp Multilayer heat sink

Also Published As

Publication number Publication date
US4025997A (en) 1977-05-31
DE2653271A1 (de) 1977-07-14

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19991018