JPS57120358A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57120358A
JPS57120358A JP56005019A JP501981A JPS57120358A JP S57120358 A JPS57120358 A JP S57120358A JP 56005019 A JP56005019 A JP 56005019A JP 501981 A JP501981 A JP 501981A JP S57120358 A JPS57120358 A JP S57120358A
Authority
JP
Japan
Prior art keywords
plate
bonded
radiator
solder
composite material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56005019A
Other languages
Japanese (ja)
Other versions
JPS639665B2 (en
Inventor
Hitoshi Onuki
Tateo Tamamura
Masao Funiyu
Keiichi Kuniya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56005019A priority Critical patent/JPS57120358A/en
Publication of JPS57120358A publication Critical patent/JPS57120358A/en
Publication of JPS639665B2 publication Critical patent/JPS639665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a high conductivity of heat and an excellent heat fatigue resisting characteristic by a method wherein Cu-C composite material is used for a radiator and an insulation plate is bonded to the radiator plate by use of Al solder. CONSTITUTION:A Cu-C composite material wherein Copper having a high conductivity of heat is arranged in a matrix and a carbon fiber having a remarkably low heat expansion coefficient has been buried therein, is used for a radiator plate 11. subsequently, the Cu-C composite material is used also for wiring films 16a, 16b. And an Ni plating layers 13a-13c are provided in the radiator plate 11 and the wiring films 16a, 16b, and they are bonded through Al solder 12a, 12b to an alumina plate 15. Thereafter, a semiconductor element 18 is bonded to the wiring film 16b by a soldering and a lead wire 19 is connected to the element 18. As described above, since the Cu-C composite plate is directly bonded to Al2O3 plate 15 not to be metallized by using Al solder, the Al2O3 plate 15 can be formed thin remarkably. As a result, a thermal resistance can be reduced remarkably.
JP56005019A 1981-01-19 1981-01-19 Semiconductor device Granted JPS57120358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56005019A JPS57120358A (en) 1981-01-19 1981-01-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005019A JPS57120358A (en) 1981-01-19 1981-01-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57120358A true JPS57120358A (en) 1982-07-27
JPS639665B2 JPS639665B2 (en) 1988-03-01

Family

ID=11599799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005019A Granted JPS57120358A (en) 1981-01-19 1981-01-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57120358A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334932A (en) * 1986-07-29 1988-02-15 Hitachi Cable Ltd Manufacture of power ic device and clad material used in the same method
JP2007162202A (en) * 2005-12-16 2007-06-28 Sachiko Yokoyama Multi-hood

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316349U (en) * 1986-07-14 1988-02-03
JPH01302391A (en) * 1988-05-31 1989-12-06 Nec Corp Image display
JPH03153299A (en) * 1989-11-10 1991-07-01 Pfu Ltd Image processor
JPH0464177A (en) * 1990-07-03 1992-02-28 Nec Corp Image display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334932A (en) * 1986-07-29 1988-02-15 Hitachi Cable Ltd Manufacture of power ic device and clad material used in the same method
JP2007162202A (en) * 2005-12-16 2007-06-28 Sachiko Yokoyama Multi-hood

Also Published As

Publication number Publication date
JPS639665B2 (en) 1988-03-01

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