DE3480245D1 - Magnetron-cathodes for the sputtering of ferromagnetic targets - Google Patents

Magnetron-cathodes for the sputtering of ferromagnetic targets

Info

Publication number
DE3480245D1
DE3480245D1 DE8484110940T DE3480245T DE3480245D1 DE 3480245 D1 DE3480245 D1 DE 3480245D1 DE 8484110940 T DE8484110940 T DE 8484110940T DE 3480245 T DE3480245 T DE 3480245T DE 3480245 D1 DE3480245 D1 DE 3480245D1
Authority
DE
Germany
Prior art keywords
target
magnet poles
sputtering
pole shoes
magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484110940T
Other languages
German (de)
English (en)
Inventor
Hans Dr Ing Aichert
Reiner Kukla
Jorg Dr Kieser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Priority to DE8484110940T priority Critical patent/DE3480245D1/de
Application granted granted Critical
Publication of DE3480245D1 publication Critical patent/DE3480245D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
DE8484110940T 1983-12-05 1984-09-13 Magnetron-cathodes for the sputtering of ferromagnetic targets Expired DE3480245D1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE8484110940T DE3480245D1 (en) 1983-12-05 1984-09-13 Magnetron-cathodes for the sputtering of ferromagnetic targets

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3343904 1983-12-05
DE8484110940T DE3480245D1 (en) 1983-12-05 1984-09-13 Magnetron-cathodes for the sputtering of ferromagnetic targets

Publications (1)

Publication Number Publication Date
DE3480245D1 true DE3480245D1 (en) 1989-11-23

Family

ID=6216066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484110940T Expired DE3480245D1 (en) 1983-12-05 1984-09-13 Magnetron-cathodes for the sputtering of ferromagnetic targets

Country Status (6)

Country Link
US (1) US4572776A (enExample)
EP (1) EP0144572B1 (enExample)
JP (1) JPS60138070A (enExample)
KR (1) KR910009249B1 (enExample)
AT (1) ATE47504T1 (enExample)
DE (1) DE3480245D1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689443B2 (ja) * 1984-11-14 1994-11-09 株式会社日立製作所 スパツタリング用タ−ゲツト
KR900001825B1 (ko) * 1984-11-14 1990-03-24 가부시끼가이샤 히다찌세이사꾸쇼 성막 지향성을 고려한 스퍼터링장치
DE3527626A1 (de) * 1985-08-01 1987-02-05 Leybold Heraeus Gmbh & Co Kg Zerstaeubungskatode nach dem magnetronprinzip
DE3601439C1 (de) * 1986-01-20 1987-04-09 Glyco Metall Werke Schichtverbundwerkstoff,insbesondere fuer Gleit- und Reibelemente,sowie Verfahren zu seiner Herstellung
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus
CA1308060C (en) * 1986-04-04 1992-09-29 Tokyo Electron Limited Cathode and target design for a sputter coating apparatus
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip
JPH07107188B2 (ja) * 1986-09-12 1995-11-15 松下電器産業株式会社 スパッタリングターゲット
DE3810175A1 (de) * 1988-03-25 1989-10-05 Elektronische Anlagen Gmbh Kathodenzerstaeubungsvorrichtung
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
JPH02194171A (ja) * 1989-01-20 1990-07-31 Ulvac Corp マグネトロンスパッタリング源
JPH02243761A (ja) * 1989-03-15 1990-09-27 Ulvac Corp マグネトロンスパッタリング源用電磁石の制御方法
DE4018914C1 (enExample) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
US5080772A (en) * 1990-08-24 1992-01-14 Materials Research Corporation Method of improving ion flux distribution uniformity on a substrate
DE4120690A1 (de) * 1991-06-22 1992-12-24 Leybold Ag Targetvorrichtung aus ferromagnetischem material fuer eine magnetron-elektrode
US5174880A (en) * 1991-08-05 1992-12-29 Hmt Technology Corporation Magnetron sputter gun target assembly with distributed magnetic field
DE4135939A1 (de) * 1991-10-31 1993-05-06 Leybold Ag, 6450 Hanau, De Zerstaeubungskathode
US5407551A (en) * 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
DE19648390A1 (de) * 1995-09-27 1998-05-28 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage
JP3886209B2 (ja) * 1997-06-02 2007-02-28 貞夫 門倉 対向ターゲット式スパッタ装置
US6432286B1 (en) * 1998-06-10 2002-08-13 David A. Glocker Conical sputtering target
US6235170B1 (en) * 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target
US6224725B1 (en) * 1999-02-09 2001-05-01 Isoflux, Inc. Unbalanced magnetron sputtering with auxiliary cathode
US6359388B1 (en) 2000-08-28 2002-03-19 Guardian Industries Corp. Cold cathode ion beam deposition apparatus with segregated gas flow
US6783638B2 (en) * 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
GB0126721D0 (en) * 2001-11-07 2002-01-02 Bellido Gonzalez V Ferromagnetic magnetron
US6988463B2 (en) * 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
US6812648B2 (en) 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
EA201101662A1 (ru) * 2006-07-13 2012-05-30 Тиэр Коутингз Лимитед Устройство для нанесения покрытий и способ нанесения покрытий
JP5265149B2 (ja) 2006-07-21 2013-08-14 アプライド マテリアルズ インコーポレイテッド マルチカソード設計用冷却暗部シールド
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
EP2162899B1 (en) * 2007-06-15 2015-01-21 Oerlikon Advanced Technologies AG Multitarget sputter source and method for the deposition of multi-layers
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US20100018857A1 (en) * 2008-07-23 2010-01-28 Seagate Technology Llc Sputter cathode apparatus allowing thick magnetic targets
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
TWI338721B (en) * 2009-10-16 2011-03-11 Suntek Prec Corp A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces
JP5853487B2 (ja) * 2010-08-19 2016-02-09 東レ株式会社 放電電極及び放電方法
US8575565B2 (en) 2011-10-10 2013-11-05 Guardian Industries Corp. Ion source apparatus and methods of using the same
DE102013112861B4 (de) * 2013-01-15 2018-11-15 VON ARDENNE Asset GmbH & Co. KG Magnetronanordnung und Target für eine Magnetronanordnung
US9328410B2 (en) 2013-10-25 2016-05-03 First Solar, Inc. Physical vapor deposition tile arrangement and physical vapor deposition arrangement
TWI618809B (zh) * 2016-08-31 2018-03-21 Linco Technology Co Ltd 具高靶材利用率之磁性靶材陰極裝置
CN111996504A (zh) * 2020-07-10 2020-11-27 包头稀土研究院 铁磁性靶材磁控溅射装置
CN111996505B (zh) * 2020-07-10 2023-07-14 包头稀土研究院 磁控溅射铁磁性靶材的装置
CN114574830B (zh) * 2022-03-11 2024-03-26 陕西理工大学 用于磁控溅射靶阴极的磁铁布置结构
PL4283011T3 (pl) * 2022-05-26 2024-11-12 Instytut Fizyki Polskiej Akademii Nauk Urządzenie do rozpylania magnetronowego z targetu

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4299678A (en) * 1979-07-23 1981-11-10 Spin Physics, Inc. Magnetic target plate for use in magnetron sputtering of magnetic films
JPS5893872A (ja) * 1981-11-30 1983-06-03 Anelva Corp スパツタリング装置
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus

Also Published As

Publication number Publication date
EP0144572A2 (de) 1985-06-19
KR850005004A (ko) 1985-08-19
US4572776A (en) 1986-02-25
KR910009249B1 (ko) 1991-11-07
ATE47504T1 (de) 1989-11-15
JPS60138070A (ja) 1985-07-22
JPH0373633B2 (enExample) 1991-11-22
EP0144572B1 (de) 1989-10-18
EP0144572A3 (en) 1986-07-30

Similar Documents

Publication Publication Date Title
DE3480245D1 (en) Magnetron-cathodes for the sputtering of ferromagnetic targets
EP0144838A3 (en) Magnetron cathode for the sputtering of ferromagnetic targets
DE3786117D1 (de) Zerstaeubungskatode nach dem magnetronprinzip.
ATE169349T1 (de) Flachen magnetronzerstäubungsanlage
EP0210473A3 (en) Sputtering cathode according to the magnetron principle
GB2258343B (en) Magnetron sputter ion plating
ATE96941T1 (de) Magnetron-zerstaeubungskathode.
BR0116951B1 (pt) evaporador de arco com guia magnÉtico poderoso para alvos tendo uma grande Área de superfÍcie.
GB2092365B (en) Electron lens with three magnetic polepieces
DE59400046D1 (de) Magnetronzerstäubungsquelle und deren Verwendung.
WO2002071816A3 (en) Improved double chamber ion implantation system
GB1464039A (en) Electron bearm gun system
GB1083693A (en) Improvements in or relating to magnetic focussing arrangements of the kind comprising an electric beam discharge tube
KR960019428A (ko) 평면 마그네트론 스퍼터링 방법 및 장치
GB1358411A (en) Sputtering
RU2107971C1 (ru) Магнетронная распылительная система
DE3569434D1 (en) Sputter coating source having plural target rings
US6207028B1 (en) Sputtering device with a cathode with permanent magnet system
JPS5747870A (en) Magnetron sputtering method for ferromagnetic material
GB2144772B (en) Magnetron sputter coating source for both magnetic and nonmagnetic target materials
GB1304714A (enExample)
JPS5780713A (en) Manufacture of magnetic thin film by sputtering
JPS57126969A (en) Target structure of planer magnetron type sputtering apparatus and method for controlling magnetic flux thereof
US6139706A (en) Sputter cathode
JPS55141721A (en) Sputtering apparatus for magnetic body

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee