KR910009249B1 - 제1철 자석의 극판을 스퍼어터링하기 위한 자전관 음극 - Google Patents
제1철 자석의 극판을 스퍼어터링하기 위한 자전관 음극 Download PDFInfo
- Publication number
- KR910009249B1 KR910009249B1 KR1019840007652A KR840007652A KR910009249B1 KR 910009249 B1 KR910009249 B1 KR 910009249B1 KR 1019840007652 A KR1019840007652 A KR 1019840007652A KR 840007652 A KR840007652 A KR 840007652A KR 910009249 B1 KR910009249 B1 KR 910009249B1
- Authority
- KR
- South Korea
- Prior art keywords
- pole
- magnet
- sputtering
- pole plate
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP3343904.4 | 1983-12-05 | ||
| DE3343904 | 1983-12-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR850005004A KR850005004A (ko) | 1985-08-19 |
| KR910009249B1 true KR910009249B1 (ko) | 1991-11-07 |
Family
ID=6216066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019840007652A Expired KR910009249B1 (ko) | 1983-12-05 | 1984-12-04 | 제1철 자석의 극판을 스퍼어터링하기 위한 자전관 음극 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4572776A (enExample) |
| EP (1) | EP0144572B1 (enExample) |
| JP (1) | JPS60138070A (enExample) |
| KR (1) | KR910009249B1 (enExample) |
| AT (1) | ATE47504T1 (enExample) |
| DE (1) | DE3480245D1 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689443B2 (ja) * | 1984-11-14 | 1994-11-09 | 株式会社日立製作所 | スパツタリング用タ−ゲツト |
| KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
| DE3527626A1 (de) * | 1985-08-01 | 1987-02-05 | Leybold Heraeus Gmbh & Co Kg | Zerstaeubungskatode nach dem magnetronprinzip |
| DE3601439C1 (de) * | 1986-01-20 | 1987-04-09 | Glyco Metall Werke | Schichtverbundwerkstoff,insbesondere fuer Gleit- und Reibelemente,sowie Verfahren zu seiner Herstellung |
| US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
| CA1308060C (en) * | 1986-04-04 | 1992-09-29 | Tokyo Electron Limited | Cathode and target design for a sputter coating apparatus |
| DE3624150C2 (de) * | 1986-07-17 | 1994-02-24 | Leybold Ag | Zerstäubungskatode nach dem Magnetronprinzip |
| JPH07107188B2 (ja) * | 1986-09-12 | 1995-11-15 | 松下電器産業株式会社 | スパッタリングターゲット |
| DE3810175A1 (de) * | 1988-03-25 | 1989-10-05 | Elektronische Anlagen Gmbh | Kathodenzerstaeubungsvorrichtung |
| US4892633A (en) * | 1988-11-14 | 1990-01-09 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
| US4865708A (en) * | 1988-11-14 | 1989-09-12 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
| JPH02194171A (ja) * | 1989-01-20 | 1990-07-31 | Ulvac Corp | マグネトロンスパッタリング源 |
| JPH02243761A (ja) * | 1989-03-15 | 1990-09-27 | Ulvac Corp | マグネトロンスパッタリング源用電磁石の制御方法 |
| DE4018914C1 (enExample) * | 1990-06-13 | 1991-06-06 | Leybold Ag, 6450 Hanau, De | |
| US5080772A (en) * | 1990-08-24 | 1992-01-14 | Materials Research Corporation | Method of improving ion flux distribution uniformity on a substrate |
| DE4120690A1 (de) * | 1991-06-22 | 1992-12-24 | Leybold Ag | Targetvorrichtung aus ferromagnetischem material fuer eine magnetron-elektrode |
| US5174880A (en) * | 1991-08-05 | 1992-12-29 | Hmt Technology Corporation | Magnetron sputter gun target assembly with distributed magnetic field |
| DE4135939A1 (de) * | 1991-10-31 | 1993-05-06 | Leybold Ag, 6450 Hanau, De | Zerstaeubungskathode |
| US5407551A (en) * | 1993-07-13 | 1995-04-18 | The Boc Group, Inc. | Planar magnetron sputtering apparatus |
| DE19648390A1 (de) * | 1995-09-27 | 1998-05-28 | Leybold Materials Gmbh | Target für die Sputterkathode einer Vakuumbeschichtungsanlage |
| JP3886209B2 (ja) * | 1997-06-02 | 2007-02-28 | 貞夫 門倉 | 対向ターゲット式スパッタ装置 |
| US6432286B1 (en) * | 1998-06-10 | 2002-08-13 | David A. Glocker | Conical sputtering target |
| US6235170B1 (en) * | 1998-06-10 | 2001-05-22 | David A. Glocker | Conical sputtering target |
| US6224725B1 (en) * | 1999-02-09 | 2001-05-01 | Isoflux, Inc. | Unbalanced magnetron sputtering with auxiliary cathode |
| US6359388B1 (en) | 2000-08-28 | 2002-03-19 | Guardian Industries Corp. | Cold cathode ion beam deposition apparatus with segregated gas flow |
| US6783638B2 (en) * | 2001-09-07 | 2004-08-31 | Sputtered Films, Inc. | Flat magnetron |
| GB0126721D0 (en) * | 2001-11-07 | 2002-01-02 | Bellido Gonzalez V | Ferromagnetic magnetron |
| US6988463B2 (en) * | 2002-10-18 | 2006-01-24 | Guardian Industries Corp. | Ion beam source with gas introduced directly into deposition/vacuum chamber |
| US6812648B2 (en) | 2002-10-21 | 2004-11-02 | Guardian Industries Corp. | Method of cleaning ion source, and corresponding apparatus/system |
| EA201101662A1 (ru) * | 2006-07-13 | 2012-05-30 | Тиэр Коутингз Лимитед | Устройство для нанесения покрытий и способ нанесения покрытий |
| JP5265149B2 (ja) | 2006-07-21 | 2013-08-14 | アプライド マテリアルズ インコーポレイテッド | マルチカソード設計用冷却暗部シールド |
| US20080083611A1 (en) * | 2006-10-06 | 2008-04-10 | Tegal Corporation | High-adhesive backside metallization |
| EP2162899B1 (en) * | 2007-06-15 | 2015-01-21 | Oerlikon Advanced Technologies AG | Multitarget sputter source and method for the deposition of multi-layers |
| US8808513B2 (en) * | 2008-03-25 | 2014-08-19 | Oem Group, Inc | Stress adjustment in reactive sputtering |
| US20090246385A1 (en) * | 2008-03-25 | 2009-10-01 | Tegal Corporation | Control of crystal orientation and stress in sputter deposited thin films |
| US20100018857A1 (en) * | 2008-07-23 | 2010-01-28 | Seagate Technology Llc | Sputter cathode apparatus allowing thick magnetic targets |
| US8482375B2 (en) * | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
| TWI338721B (en) * | 2009-10-16 | 2011-03-11 | Suntek Prec Corp | A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces |
| JP5853487B2 (ja) * | 2010-08-19 | 2016-02-09 | 東レ株式会社 | 放電電極及び放電方法 |
| US8575565B2 (en) | 2011-10-10 | 2013-11-05 | Guardian Industries Corp. | Ion source apparatus and methods of using the same |
| DE102013112861B4 (de) * | 2013-01-15 | 2018-11-15 | VON ARDENNE Asset GmbH & Co. KG | Magnetronanordnung und Target für eine Magnetronanordnung |
| US9328410B2 (en) | 2013-10-25 | 2016-05-03 | First Solar, Inc. | Physical vapor deposition tile arrangement and physical vapor deposition arrangement |
| TWI618809B (zh) * | 2016-08-31 | 2018-03-21 | Linco Technology Co Ltd | 具高靶材利用率之磁性靶材陰極裝置 |
| CN111996504A (zh) * | 2020-07-10 | 2020-11-27 | 包头稀土研究院 | 铁磁性靶材磁控溅射装置 |
| CN111996505B (zh) * | 2020-07-10 | 2023-07-14 | 包头稀土研究院 | 磁控溅射铁磁性靶材的装置 |
| CN114574830B (zh) * | 2022-03-11 | 2024-03-26 | 陕西理工大学 | 用于磁控溅射靶阴极的磁铁布置结构 |
| PL4283011T3 (pl) * | 2022-05-26 | 2024-11-12 | Instytut Fizyki Polskiej Akademii Nauk | Urządzenie do rozpylania magnetronowego z targetu |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4198283A (en) * | 1978-11-06 | 1980-04-15 | Materials Research Corporation | Magnetron sputtering target and cathode assembly |
| US4299678A (en) * | 1979-07-23 | 1981-11-10 | Spin Physics, Inc. | Magnetic target plate for use in magnetron sputtering of magnetic films |
| JPS5893872A (ja) * | 1981-11-30 | 1983-06-03 | Anelva Corp | スパツタリング装置 |
| US4391697A (en) * | 1982-08-16 | 1983-07-05 | Vac-Tec Systems, Inc. | High rate magnetron sputtering of high permeability materials |
| US4414086A (en) * | 1982-11-05 | 1983-11-08 | Varian Associates, Inc. | Magnetic targets for use in sputter coating apparatus |
-
1984
- 1984-09-13 DE DE8484110940T patent/DE3480245D1/de not_active Expired
- 1984-09-13 AT AT84110940T patent/ATE47504T1/de not_active IP Right Cessation
- 1984-09-13 EP EP84110940A patent/EP0144572B1/de not_active Expired
- 1984-12-04 KR KR1019840007652A patent/KR910009249B1/ko not_active Expired
- 1984-12-05 JP JP59255875A patent/JPS60138070A/ja active Granted
- 1984-12-05 US US06/678,597 patent/US4572776A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0144572A2 (de) | 1985-06-19 |
| KR850005004A (ko) | 1985-08-19 |
| US4572776A (en) | 1986-02-25 |
| ATE47504T1 (de) | 1989-11-15 |
| JPS60138070A (ja) | 1985-07-22 |
| JPH0373633B2 (enExample) | 1991-11-22 |
| DE3480245D1 (en) | 1989-11-23 |
| EP0144572B1 (de) | 1989-10-18 |
| EP0144572A3 (en) | 1986-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 19941108 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 19941108 |