JPH0373633B2 - - Google Patents

Info

Publication number
JPH0373633B2
JPH0373633B2 JP59255875A JP25587584A JPH0373633B2 JP H0373633 B2 JPH0373633 B2 JP H0373633B2 JP 59255875 A JP59255875 A JP 59255875A JP 25587584 A JP25587584 A JP 25587584A JP H0373633 B2 JPH0373633 B2 JP H0373633B2
Authority
JP
Japan
Prior art keywords
target
magnetic
pole pieces
sputtering
magnetron cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59255875A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60138070A (ja
Inventor
Aihieruto Hansu
Kiizaa Ieruku
Kukura Rainaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Publication of JPS60138070A publication Critical patent/JPS60138070A/ja
Publication of JPH0373633B2 publication Critical patent/JPH0373633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
JP59255875A 1983-12-05 1984-12-05 強磁性ターゲツトをスパツタするためのマグネトロンカソード Granted JPS60138070A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3343904 1983-12-05
DE3343904.4 1983-12-05

Publications (2)

Publication Number Publication Date
JPS60138070A JPS60138070A (ja) 1985-07-22
JPH0373633B2 true JPH0373633B2 (enExample) 1991-11-22

Family

ID=6216066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59255875A Granted JPS60138070A (ja) 1983-12-05 1984-12-05 強磁性ターゲツトをスパツタするためのマグネトロンカソード

Country Status (6)

Country Link
US (1) US4572776A (enExample)
EP (1) EP0144572B1 (enExample)
JP (1) JPS60138070A (enExample)
KR (1) KR910009249B1 (enExample)
AT (1) ATE47504T1 (enExample)
DE (1) DE3480245D1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001825B1 (ko) * 1984-11-14 1990-03-24 가부시끼가이샤 히다찌세이사꾸쇼 성막 지향성을 고려한 스퍼터링장치
JPH0689443B2 (ja) * 1984-11-14 1994-11-09 株式会社日立製作所 スパツタリング用タ−ゲツト
DE3527626A1 (de) * 1985-08-01 1987-02-05 Leybold Heraeus Gmbh & Co Kg Zerstaeubungskatode nach dem magnetronprinzip
DE3601439C1 (de) * 1986-01-20 1987-04-09 Glyco Metall Werke Schichtverbundwerkstoff,insbesondere fuer Gleit- und Reibelemente,sowie Verfahren zu seiner Herstellung
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus
EP0240369B1 (en) * 1986-04-04 1993-09-15 Materials Research Corporation Improved cathode and target design for a sputter coating apparatus
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip
JPH07107188B2 (ja) * 1986-09-12 1995-11-15 松下電器産業株式会社 スパッタリングターゲット
DE3810175A1 (de) * 1988-03-25 1989-10-05 Elektronische Anlagen Gmbh Kathodenzerstaeubungsvorrichtung
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
JPH02194171A (ja) * 1989-01-20 1990-07-31 Ulvac Corp マグネトロンスパッタリング源
JPH02243761A (ja) * 1989-03-15 1990-09-27 Ulvac Corp マグネトロンスパッタリング源用電磁石の制御方法
DE4018914C1 (enExample) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
US5080772A (en) * 1990-08-24 1992-01-14 Materials Research Corporation Method of improving ion flux distribution uniformity on a substrate
DE4120690A1 (de) * 1991-06-22 1992-12-24 Leybold Ag Targetvorrichtung aus ferromagnetischem material fuer eine magnetron-elektrode
US5174880A (en) * 1991-08-05 1992-12-29 Hmt Technology Corporation Magnetron sputter gun target assembly with distributed magnetic field
DE4135939A1 (de) * 1991-10-31 1993-05-06 Leybold Ag, 6450 Hanau, De Zerstaeubungskathode
US5407551A (en) * 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
DE19648390A1 (de) * 1995-09-27 1998-05-28 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage
JP3886209B2 (ja) * 1997-06-02 2007-02-28 貞夫 門倉 対向ターゲット式スパッタ装置
US6235170B1 (en) * 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target
US6432286B1 (en) * 1998-06-10 2002-08-13 David A. Glocker Conical sputtering target
US6224725B1 (en) * 1999-02-09 2001-05-01 Isoflux, Inc. Unbalanced magnetron sputtering with auxiliary cathode
US6359388B1 (en) 2000-08-28 2002-03-19 Guardian Industries Corp. Cold cathode ion beam deposition apparatus with segregated gas flow
US6783638B2 (en) * 2001-09-07 2004-08-31 Sputtered Films, Inc. Flat magnetron
GB0126721D0 (en) * 2001-11-07 2002-01-02 Bellido Gonzalez V Ferromagnetic magnetron
US6988463B2 (en) * 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
US6812648B2 (en) 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
WO2008007095A1 (en) * 2006-07-13 2008-01-17 Teer Coatings Limited Coating apparatus and method
JP5265149B2 (ja) 2006-07-21 2013-08-14 アプライド マテリアルズ インコーポレイテッド マルチカソード設計用冷却暗部シールド
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US20080308412A1 (en) * 2007-06-15 2008-12-18 Oc Oerlikon Balzers Ag Multitarget sputter source and method for the deposition of multi-layers
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US20100018857A1 (en) * 2008-07-23 2010-01-28 Seagate Technology Llc Sputter cathode apparatus allowing thick magnetic targets
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
TWI338721B (en) * 2009-10-16 2011-03-11 Suntek Prec Corp A sputtering apparatus with a side target and a method for sputtering a workpiece having non-planer surfaces
JP5853487B2 (ja) * 2010-08-19 2016-02-09 東レ株式会社 放電電極及び放電方法
US8575565B2 (en) 2011-10-10 2013-11-05 Guardian Industries Corp. Ion source apparatus and methods of using the same
DE102013112861B4 (de) * 2013-01-15 2018-11-15 VON ARDENNE Asset GmbH & Co. KG Magnetronanordnung und Target für eine Magnetronanordnung
US9328410B2 (en) 2013-10-25 2016-05-03 First Solar, Inc. Physical vapor deposition tile arrangement and physical vapor deposition arrangement
TWI618809B (zh) * 2016-08-31 2018-03-21 Linco Technology Co Ltd 具高靶材利用率之磁性靶材陰極裝置
CN111996504A (zh) * 2020-07-10 2020-11-27 包头稀土研究院 铁磁性靶材磁控溅射装置
CN111996505B (zh) * 2020-07-10 2023-07-14 包头稀土研究院 磁控溅射铁磁性靶材的装置
CN114574830B (zh) * 2022-03-11 2024-03-26 陕西理工大学 用于磁控溅射靶阴极的磁铁布置结构
PL4283011T3 (pl) * 2022-05-26 2024-11-12 Instytut Fizyki Polskiej Akademii Nauk Urządzenie do rozpylania magnetronowego z targetu

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4299678A (en) * 1979-07-23 1981-11-10 Spin Physics, Inc. Magnetic target plate for use in magnetron sputtering of magnetic films
JPS5893872A (ja) * 1981-11-30 1983-06-03 Anelva Corp スパツタリング装置
US4391697A (en) * 1982-08-16 1983-07-05 Vac-Tec Systems, Inc. High rate magnetron sputtering of high permeability materials
US4414086A (en) * 1982-11-05 1983-11-08 Varian Associates, Inc. Magnetic targets for use in sputter coating apparatus

Also Published As

Publication number Publication date
EP0144572B1 (de) 1989-10-18
EP0144572A3 (en) 1986-07-30
EP0144572A2 (de) 1985-06-19
KR850005004A (ko) 1985-08-19
ATE47504T1 (de) 1989-11-15
US4572776A (en) 1986-02-25
JPS60138070A (ja) 1985-07-22
DE3480245D1 (en) 1989-11-23
KR910009249B1 (ko) 1991-11-07

Similar Documents

Publication Publication Date Title
JPH0373633B2 (enExample)
EP0162642B1 (en) Magnetron sputter device using the same pole piece for coupling separate confining magnetic field to separate targets subject to separate discharges
US8398834B2 (en) Target utilization improvement for rotatable magnetrons
US4610774A (en) Target for sputtering
US4606806A (en) Magnetron sputter device having planar and curved targets
US5298136A (en) Steered arc coating with thick targets
US5069772A (en) Apparatus for coating substrates by means of a magnetron cathode
JPH0151542B2 (enExample)
JPS6233766A (ja) 陰極スパツタリング装置で基板を被覆するスパツタリング陰極
JPH01272765A (ja) スパッタ被覆装置およびその被覆方法
US4657654A (en) Targets for magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges
JPS60193236A (ja) マグネトロン陰極装置
EP0163445B1 (en) Magnetron sputter device having planar and concave targets
US5330632A (en) Apparatus for cathode sputtering
JP6895589B2 (ja) スパッタリング装置、薄膜製造方法
US5688388A (en) Apparatus for coating a substrate
JPH08134640A (ja) スパッタ装置のマグネトロンカソード電極
JPH01156471A (ja) スパツタリング陰極
US5182001A (en) Process for coating substrates by means of a magnetron cathode
JP3917348B2 (ja) アーク蒸発源、真空蒸着装置及び真空蒸着方法
EP0197770B1 (en) Planar penning magnetron sputtering device
CA1242991A (en) Magnetron sputter coating source for both magnetic and nonmagnetic target materials
US20130087454A1 (en) Magnetic Material Sputtering Target Provided with Groove in Rear Face of Target
JP2902822B2 (ja) プレーナ形マグネトロンスパッタ電極
JPH0693442A (ja) マグネトロン・スパッタカソード