DE3444769A1 - Elektroluminiszierende vorrichtung - Google Patents

Elektroluminiszierende vorrichtung

Info

Publication number
DE3444769A1
DE3444769A1 DE19843444769 DE3444769A DE3444769A1 DE 3444769 A1 DE3444769 A1 DE 3444769A1 DE 19843444769 DE19843444769 DE 19843444769 DE 3444769 A DE3444769 A DE 3444769A DE 3444769 A1 DE3444769 A1 DE 3444769A1
Authority
DE
Germany
Prior art keywords
layer
light
emitting layer
selenium
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843444769
Other languages
German (de)
English (en)
Other versions
DE3444769C2 (enExample
Inventor
Takuo Hayashi
Yukihiro Ina Nagano Hirasawa
Motoi Nagano Kitabayashi
Naotoshi Nagano Miyazawa
Norihiko Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koa Corp
Original Assignee
Koa Denko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koa Denko Co Ltd filed Critical Koa Denko Co Ltd
Publication of DE3444769A1 publication Critical patent/DE3444769A1/de
Application granted granted Critical
Publication of DE3444769C2 publication Critical patent/DE3444769C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials

Landscapes

  • Electroluminescent Light Sources (AREA)
DE19843444769 1983-12-08 1984-12-07 Elektroluminiszierende vorrichtung Granted DE3444769A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231792A JPS60124397A (ja) 1983-12-08 1983-12-08 エレクトロルミネツセンス素子

Publications (2)

Publication Number Publication Date
DE3444769A1 true DE3444769A1 (de) 1985-06-20
DE3444769C2 DE3444769C2 (enExample) 1988-11-10

Family

ID=16929087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843444769 Granted DE3444769A1 (de) 1983-12-08 1984-12-07 Elektroluminiszierende vorrichtung

Country Status (5)

Country Link
US (1) US4647813A (enExample)
JP (1) JPS60124397A (enExample)
DE (1) DE3444769A1 (enExample)
FR (1) FR2556548A1 (enExample)
GB (1) GB2152751B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226593A1 (de) * 1991-08-20 1993-02-25 Fuji Electric Co Ltd Elektrolumineszenz- (el) - anzeigetafel und verfahren zu deren herstellung

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794302A (en) * 1986-01-08 1988-12-27 Kabushiki Kaisha Komatsu Seisakusho Thin film el device and method of manufacturing the same
IT1221924B (it) * 1987-07-01 1990-08-23 Eniricerche Spa Dispositivo elettroluminescente a film sottile e procedimento per la sua preparazione
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
GB2306251B (en) * 1994-08-18 1998-02-04 Ultra Silicon Techn Uk Ltd Improved luminous efficiency in a thin film EL device
GB9506328D0 (en) * 1994-08-18 1995-05-17 Ultra Silicon Techn Uk Ltd Improvements in and relating to TFEL technology
US5910706A (en) * 1996-12-18 1999-06-08 Ultra Silicon Technology (Uk) Limited Laterally transmitting thin film electroluminescent device
US6713955B1 (en) * 1998-11-20 2004-03-30 Agilent Technologies, Inc. Organic light emitting device having a current self-limiting structure
GB9907120D0 (en) * 1998-12-16 1999-05-19 Cambridge Display Tech Ltd Organic light-emissive devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112404A (en) * 1953-06-17 1963-11-26 Rauland Corp Photosensitive radiant-energy transducers
US3152222A (en) * 1955-03-24 1964-10-06 Sylvania Electric Prod Electroluminescent color image device
US3644741A (en) * 1969-05-16 1972-02-22 Energy Conversion Devices Inc Display screen using variable resistance memory semiconductor
DE2633038A1 (de) * 1975-07-22 1977-02-10 Phosphor Prod Co Ltd Elektrolumineszierende vorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2818531A (en) * 1954-06-24 1957-12-31 Sylvania Electric Prod Electroluminescent image device
US3708708A (en) * 1971-01-22 1973-01-02 Prudential Insurance Co Treatment of light emitting films to extend their useful life
GB2133927B (en) * 1982-12-10 1986-09-03 Nat Res Dev Electroluminescent devices
US4543511A (en) * 1983-03-24 1985-09-24 Wisconsin Alumni Research Foundation Semiconductor electrodes having regions of graded composition exhibiting photoluminescence and electroluminescence

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112404A (en) * 1953-06-17 1963-11-26 Rauland Corp Photosensitive radiant-energy transducers
US3152222A (en) * 1955-03-24 1964-10-06 Sylvania Electric Prod Electroluminescent color image device
US3644741A (en) * 1969-05-16 1972-02-22 Energy Conversion Devices Inc Display screen using variable resistance memory semiconductor
DE2633038A1 (de) * 1975-07-22 1977-02-10 Phosphor Prod Co Ltd Elektrolumineszierende vorrichtung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226593A1 (de) * 1991-08-20 1993-02-25 Fuji Electric Co Ltd Elektrolumineszenz- (el) - anzeigetafel und verfahren zu deren herstellung
DE4226593B4 (de) * 1991-08-20 2005-05-25 Fuji Electric Holdings Co., Ltd., Kawasaki Elektrolumineszenz- (EL) - Anzeigetafel und Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
FR2556548A1 (fr) 1985-06-14
US4647813A (en) 1987-03-03
GB2152751A (en) 1985-08-07
JPS63918B2 (enExample) 1988-01-09
GB2152751B (en) 1987-08-26
DE3444769C2 (enExample) 1988-11-10
JPS60124397A (ja) 1985-07-03
GB8429925D0 (en) 1985-01-03

Similar Documents

Publication Publication Date Title
DE2443178C2 (de) Speichervorrichtung mit einer Halbleiterschicht
DE966492C (de) Elektrisch steuerbares Schaltelement aus Halbleitermaterial
DE2812592A1 (de) Elektrolumineszenz-duennschichtanzeigeelement und verfahren zu seiner herstellung
DE1032404B (de) Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten
DE2050289B2 (de) Steuerbarer Halbleitergleichrichter
DE2165424B2 (de) Elektrolumineszenzeinrichtung
DE3650621T2 (de) Supraleiter für Magnetfeldabschirmung und Verfahren zu dessen Herstellung
DE3444769A1 (de) Elektroluminiszierende vorrichtung
DE2631881A1 (de) Verfahren zur herstellung einer halbleitervorrichtung
DE2432503C3 (de) Elektrolumineszenzelement
DE3605130C2 (enExample)
DE1464604A1 (de) Halbleitervorrichtung
DE4226593B4 (de) Elektrolumineszenz- (EL) - Anzeigetafel und Verfahren zu deren Herstellung
DE2422120B2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1640200B1 (de) Supraleitendes material und verfahren zu dessen herstellung
DE2153250A1 (de) Tunneldiode
DE2931825A1 (de) Magnetblasen-speichervorrichtung
DE3886286T2 (de) Verbindungsverfahren für Halbleiteranordnung.
DE1105068B (de) Verfahren zur Herstellung von Vielfachdioden
DE2932191A1 (de) Dotierung durch einlagerung von troepfchen unter verwendung von reaktiven traegermetallen und dotierungsmitteln
DE3018510C2 (de) Josephson-Übergangselement
DE2620980C2 (enExample)
DE2710701A1 (de) Halbleiterbauelement
DE3822904C2 (enExample)
DE2632647A1 (de) Halbleiterbauelement mit passivierender schutzschicht

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: KOA CORP., INA, NAGANO, JP TAKAHASHI, KIYOSHI KONA

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee