FR2556548A1 - Dispositif electroluminescent presentant une meilleure resistance en tension et en courant, notamment par l'utilisation d'une source de courant continu - Google Patents

Dispositif electroluminescent presentant une meilleure resistance en tension et en courant, notamment par l'utilisation d'une source de courant continu Download PDF

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Publication number
FR2556548A1
FR2556548A1 FR8418707A FR8418707A FR2556548A1 FR 2556548 A1 FR2556548 A1 FR 2556548A1 FR 8418707 A FR8418707 A FR 8418707A FR 8418707 A FR8418707 A FR 8418707A FR 2556548 A1 FR2556548 A1 FR 2556548A1
Authority
FR
France
Prior art keywords
layer
selenium
light
emitting layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8418707A
Other languages
English (en)
French (fr)
Inventor
Motoi Kitabayashi
Takuo Hayashi
Norihiko Ozawa
Yukihiro Hirasawa
Naotoshi Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koa Corp
Original Assignee
Koa Denko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koa Denko Co Ltd filed Critical Koa Denko Co Ltd
Publication of FR2556548A1 publication Critical patent/FR2556548A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials

Landscapes

  • Electroluminescent Light Sources (AREA)
FR8418707A 1983-12-08 1984-12-07 Dispositif electroluminescent presentant une meilleure resistance en tension et en courant, notamment par l'utilisation d'une source de courant continu Pending FR2556548A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231792A JPS60124397A (ja) 1983-12-08 1983-12-08 エレクトロルミネツセンス素子

Publications (1)

Publication Number Publication Date
FR2556548A1 true FR2556548A1 (fr) 1985-06-14

Family

ID=16929087

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8418707A Pending FR2556548A1 (fr) 1983-12-08 1984-12-07 Dispositif electroluminescent presentant une meilleure resistance en tension et en courant, notamment par l'utilisation d'une source de courant continu

Country Status (5)

Country Link
US (1) US4647813A (enExample)
JP (1) JPS60124397A (enExample)
DE (1) DE3444769A1 (enExample)
FR (1) FR2556548A1 (enExample)
GB (1) GB2152751B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0357458A3 (en) * 1988-09-02 1990-10-31 Sharp Kabushiki Kaisha Luminescent device
EP0421494A3 (en) * 1986-01-08 1991-12-18 Kabushiki Kaisha Komatsu Seisakusho A thin film electroluminescent (el) device and method of manufacturing the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221924B (it) * 1987-07-01 1990-08-23 Eniricerche Spa Dispositivo elettroluminescente a film sottile e procedimento per la sua preparazione
JP2833282B2 (ja) * 1991-08-20 1998-12-09 富士電機株式会社 エレクトロルミネッセンス表示装置とその製造方法
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
GB2306251B (en) * 1994-08-18 1998-02-04 Ultra Silicon Techn Uk Ltd Improved luminous efficiency in a thin film EL device
GB9506328D0 (en) * 1994-08-18 1995-05-17 Ultra Silicon Techn Uk Ltd Improvements in and relating to TFEL technology
US5910706A (en) * 1996-12-18 1999-06-08 Ultra Silicon Technology (Uk) Limited Laterally transmitting thin film electroluminescent device
US6713955B1 (en) * 1998-11-20 2004-03-30 Agilent Technologies, Inc. Organic light emitting device having a current self-limiting structure
GB9907120D0 (en) * 1998-12-16 1999-05-19 Cambridge Display Tech Ltd Organic light-emissive devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3708708A (en) * 1971-01-22 1973-01-02 Prudential Insurance Co Treatment of light emitting films to extend their useful life
GB2133927A (en) * 1982-12-10 1984-08-01 Nat Res Dev Electroluminescent devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3112404A (en) * 1953-06-17 1963-11-26 Rauland Corp Photosensitive radiant-energy transducers
US2818531A (en) * 1954-06-24 1957-12-31 Sylvania Electric Prod Electroluminescent image device
US3152222A (en) * 1955-03-24 1964-10-06 Sylvania Electric Prod Electroluminescent color image device
US3644741A (en) * 1969-05-16 1972-02-22 Energy Conversion Devices Inc Display screen using variable resistance memory semiconductor
DE2633038A1 (de) * 1975-07-22 1977-02-10 Phosphor Prod Co Ltd Elektrolumineszierende vorrichtung
US4543511A (en) * 1983-03-24 1985-09-24 Wisconsin Alumni Research Foundation Semiconductor electrodes having regions of graded composition exhibiting photoluminescence and electroluminescence

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3708708A (en) * 1971-01-22 1973-01-02 Prudential Insurance Co Treatment of light emitting films to extend their useful life
GB2133927A (en) * 1982-12-10 1984-08-01 Nat Res Dev Electroluminescent devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN *
JAPANESE JOURNAL OF APPLIED PHYSICS *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421494A3 (en) * 1986-01-08 1991-12-18 Kabushiki Kaisha Komatsu Seisakusho A thin film electroluminescent (el) device and method of manufacturing the same
EP0357458A3 (en) * 1988-09-02 1990-10-31 Sharp Kabushiki Kaisha Luminescent device
US5616937A (en) * 1988-09-02 1997-04-01 Sharp Kabushiki Kaisha Compound semiconductor luminescent device

Also Published As

Publication number Publication date
DE3444769A1 (de) 1985-06-20
US4647813A (en) 1987-03-03
GB2152751A (en) 1985-08-07
JPS63918B2 (enExample) 1988-01-09
GB2152751B (en) 1987-08-26
DE3444769C2 (enExample) 1988-11-10
JPS60124397A (ja) 1985-07-03
GB8429925D0 (en) 1985-01-03

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