DE3308389A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3308389A1
DE3308389A1 DE19833308389 DE3308389A DE3308389A1 DE 3308389 A1 DE3308389 A1 DE 3308389A1 DE 19833308389 DE19833308389 DE 19833308389 DE 3308389 A DE3308389 A DE 3308389A DE 3308389 A1 DE3308389 A1 DE 3308389A1
Authority
DE
Germany
Prior art keywords
semiconductor device
insulating container
wall
gate electrode
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833308389
Other languages
German (de)
English (en)
Other versions
DE3308389C2 (enrdf_load_stackoverflow
Inventor
Yuzuru Itami Hyogo Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3308389A1 publication Critical patent/DE3308389A1/de
Application granted granted Critical
Publication of DE3308389C2 publication Critical patent/DE3308389C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
DE19833308389 1982-03-09 1983-03-09 Halbleitervorrichtung Granted DE3308389A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038904A JPS58154239A (ja) 1982-03-09 1982-03-09 半導体装置

Publications (2)

Publication Number Publication Date
DE3308389A1 true DE3308389A1 (de) 1983-11-17
DE3308389C2 DE3308389C2 (enrdf_load_stackoverflow) 1989-01-05

Family

ID=12538177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833308389 Granted DE3308389A1 (de) 1982-03-09 1983-03-09 Halbleitervorrichtung

Country Status (2)

Country Link
JP (1) JPS58154239A (enrdf_load_stackoverflow)
DE (1) DE3308389A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3805489A1 (de) * 1988-02-22 1989-08-31 Mitsubishi Electric Corp Halbleitervorrichtung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19615112A1 (de) * 1996-04-17 1997-10-23 Asea Brown Boveri Leistungshalbleiterbauelement
CN110026640A (zh) * 2019-05-15 2019-07-19 江阴市赛英电子股份有限公司 一种具有阻银结构的薄型电极钎焊陶瓷管壳

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564444B2 (de) * 1966-03-24 1977-09-15 N V Philips' Gloeilampenfabneken, Eindhoven (Niederlande) Halbleiteranordnung mit einem isolierenden traeger
DE2426113B2 (de) * 1973-06-12 1977-09-22 Asea AB, Västeraas (Schweden) Thyristor-halbleiteranordnung
DE2534703B2 (de) * 1975-08-04 1979-06-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564444B2 (de) * 1966-03-24 1977-09-15 N V Philips' Gloeilampenfabneken, Eindhoven (Niederlande) Halbleiteranordnung mit einem isolierenden traeger
DE2426113B2 (de) * 1973-06-12 1977-09-22 Asea AB, Västeraas (Schweden) Thyristor-halbleiteranordnung
DE2534703B2 (de) * 1975-08-04 1979-06-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3805489A1 (de) * 1988-02-22 1989-08-31 Mitsubishi Electric Corp Halbleitervorrichtung
DE3805489C2 (de) * 1988-02-22 1995-06-29 Mitsubishi Electric Corp Halbleitervorrichtung

Also Published As

Publication number Publication date
JPS58154239A (ja) 1983-09-13
JPS6332255B2 (enrdf_load_stackoverflow) 1988-06-29
DE3308389C2 (enrdf_load_stackoverflow) 1989-01-05

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