DE3308389A1 - Semiconductor device - Google Patents

Semiconductor device

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Publication number
DE3308389A1
DE3308389A1 DE19833308389 DE3308389A DE3308389A1 DE 3308389 A1 DE3308389 A1 DE 3308389A1 DE 19833308389 DE19833308389 DE 19833308389 DE 3308389 A DE3308389 A DE 3308389A DE 3308389 A1 DE3308389 A1 DE 3308389A1
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Germany
Prior art keywords
semiconductor device
insulating container
wall
gate electrode
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833308389
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German (de)
Other versions
DE3308389C2 (en
Inventor
Yuzuru Itami Hyogo Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3308389A1 publication Critical patent/DE3308389A1/en
Application granted granted Critical
Publication of DE3308389C2 publication Critical patent/DE3308389C2/de
Granted legal-status Critical Current

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    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

A semiconductor device such as an inhibition gate thyristor or a full-drive gate thyristor has an internal gate electrode and an outwardly extending gate electrode which is provided on an insulating casing enclosing the active semiconductor element. The casing is provided with a circumferential, electrically conducting layer on its inside wall. This layer interconnects the internal gate electrode and the outwardly extending gate electrode by means of a multiplicity of thin wires which interconnect the conductor layer and the internal gate electrode, and this makes it possible to increase the gate current of the device.

Description

Halbleitervorrichtung Semiconductor device

Die Erfindung betrifft eine Halbleitervorrichtung mit einer Steuerelektrode, insbesondere eine Halbleitervorrichtung, die ein Thyristorelement hat. Herkömmliche Halbleitervorrichtungen dieser Art sind aus den veröffentlichten japanischen Gebrauchsmustern 45-28101 und 55-38118 bekannt.The invention relates to a semiconductor device having a control electrode, in particular, a semiconductor device having a thyristor element. Conventional Semiconductor devices of this type are from the published Japanese utility models 45-28101 and 55-38118 are known.

Figur 1 stellt eine Schnittansicht eines herkömmlichen Sperrgatterthyristors dar. Der Sperrgatterthyristor benützt ganz allgemein eine ebene Schichtausbildung ähnlich einem Leistungsthyristor. Mit 1 ist eine keramische Metallabdichtung bezeichnet mit einem zylindrischen, isolierenden Behälter le aus Keramik, einem Flansch 1b mit einem Kupferanodenblock 1a, der mit Silberlot mit dem Rand eines Offnungsendes des isolierenden Behälters 1e so verbunden ist, daß er den öffnungsbereich verschließt, und einem Schweißring 1d, der mittels Silberlot auf das gegenüberliegende öffnungsende aufgebracht ist. Außerdem ist eine rohrförmige, nach außen gerichtete Gateelektrode 1c mit Silberlot an einem bestimmten Punkt in dem isolierenden Behälter 1e befestigt. Ein Thyristorelement 2 befindet sich innerhalb des Keramikmetallverschlusses 1 und wird durch einen Führungsring 3 positioniert. Eine Kathodenkompensationsplatte 6 ist auf dem Thyristorelement 2 angeordnet. Ein Gatezuleitungsdraht 4 aus Aluminium oder dergleichen ist auf die Gateelektrode des Thyristorelementes 2 aufgeklebt und dann in eine Gatehülse eingesetzt. Diese Gatehülse ist anschließend in die rohrförmige Gateelektrode 1c des Keramik- metallverschlußkörpers 1 eingesetzt. Eine Kathode 7 ist auf der Kathodenkompensationsplatte 6 angeordnet und an einem Schweißring 7a befestigt. Der Schweißring 7a und der obengenannte Schweißring 1d sind zusammengeschweißt. Durch die rohrförmige Gateelektrode 1c ist die Luft aus dem Keramikverschlußkörper evakuiert, und ein Inertgas ist in den Verschlußkörper 1 eingefüllt, woraufhin die rohrförmige Gateelektrode 1c an ihrem Ende verschmolzen wird.Figure 1 is a sectional view of a conventional locking gate thyristor The locking gate thyristor generally uses a flat layer formation similar to a power thyristor. 1 with a ceramic metal seal is referred to with a cylindrical, insulating container le made of ceramic, a flange 1b with a copper anode block 1a, which is made with silver solder with the edge of an opening end of the insulating container 1e is connected in such a way that it closes the opening area, and a welding ring 1d, which is attached to the opposite opening end by means of silver solder is upset. There is also a tubular, outward-facing gate electrode 1c fixed with silver solder at a certain point in the insulating container 1e. A thyristor element 2 is located inside the ceramic metal shutter 1 and is positioned by a guide ring 3. A cathode compensation plate 6 is arranged on the thyristor element 2. A gate lead wire 4 made of aluminum or the like is glued to the gate electrode of the thyristor element 2 and then inserted into a gate sleeve. This gate sleeve is then in the tubular Gate electrode 1c of the ceramic metal closure body 1 used. A cathode 7 is arranged on the cathode compensation plate 6 and on one Welding ring 7a attached. The welding ring 7a and the above-mentioned welding ring 1d are welded together. The air is out through the tubular gate electrode 1c the ceramic sealing body is evacuated, and an inert gas is in the sealing body 1 filled, whereupon the tubular gate electrode 1c fused at its end will.

Der Sperrgatterthyristor ist auf diese Weise fertiggestellt.The locking gate thyristor is completed in this way.

Bei diesem Thyristor ist die Gateelektrode mit dem Gatezuführdraht, der gewöhnlich ein dünner Aluminiumdraht ist, verbunden. Während nun der Gatestrom bei einem gewöhnlichen Thyristor einige Ampere beträgt, erreicht er bei einem Sperrgatethyristor 20 bis 100 A. Die obenbeschriebene Konstruktion leidet deshalb darunter, daß sie für derartige Ströme nicht ausreicht. Wenn die rohrförmige Gatelektrode durch Verschweißen verschlossen ist, nachdem der Aluminiumdraht eingesetzt worden ist, ist der Aluminiumdraht gelegentlich unterbrochen, da er weich ist und einen niedrigen Schmelzpunkt hat. Außerdem ist es, da der Aluminiumdraht elektrisch leitend ist, ziemlich schwierig, die richtigen Schweißbedingungen auszuwählen. und außerdem ist es manchmal nicht möglich, die rohrförmige Gatelektrode vollständig dicht zu verschließen.In this thyristor, the gate electrode is connected to the gate lead wire, which is usually a thin aluminum wire. While now the gate current is a few amperes in an ordinary thyristor, it reaches a blocking gate thyristor 20 to 100 A. The construction described above therefore suffers from the fact that it is not sufficient for such currents. When the tubular gate electrode by welding locked after the aluminum wire has been inserted, the aluminum wire is occasionally interrupted as it is soft and has a low melting point. In addition, since the aluminum wire is electrically conductive, it is quite difficult to select the correct welding conditions. and besides, sometimes it isn't possible to close the tubular gate electrode completely tight.

Der Erfindung liegt deshalb die Aufgabe zugrunde, zur Beseitigung der oben aufgezählten Mängel und Schwierigkeiten eine Halbleitervorrichtung zu schaffen, die eine elektrisch leitfähige Schicht besitzt, durch die eine nach außen gerichtete Steuerelektrode, die in der Innenwand eines isolierenden Behälters vorgesehen ist, mit einer Vielzahldünner Metalldrähte~verbunden ist, so daß der nach außen gerichteten Steuerelektrode ein großer Strom zugeführt werden kann.The invention is therefore based on the object of eliminating of the above-enumerated shortcomings and difficulties in creating a semiconductor device, which has an electrically conductive layer through which an outwardly directed Control electrode provided in the inner wall of an insulating container, connected with a multitude of thin metal wires ~ so that the one facing outwards A large current can be supplied to the control electrode.

Die Zeichnung zeigt im einzelnen in Fig. 1 einen Vertikalschnitt durch einen herkömmlichen Sperrgatterthvristor; Fig. 2 einen Vertikalschnitt durch ein Ausführungsbeispiel des erfindungsgemäßen Sperrgatterthvristors; und Fig. 3 eine Ausschnittsvergrößerung, die in perspektivischer Darstellung die wesentlichen Teile des Thyristors aus Fig. 2 wiedergibt.The drawing shows in detail in Fig. 1 a vertical section through a conventional locking gate thyristor; Fig. 2 is a vertical section through a Embodiment of the Sperrgatterthvristors according to the invention; and FIG. 3 a Enlarged section showing the essential parts in perspective of the thyristor from Fig. 2 reproduces.

Es wird nun ein Ausführungsbeispiel der Erfindung anhand der Figuren 2 und 3 beschrieben. Diejenigen Teile, die bereits in der Fig. 1 beschrieben sind, haben in der Fig. 2 dieselben Bezugszeichen erhalten. Der Ausschnitt, der in der Fig. 3 dargestellt ist, ist in Fig. 2 die mit A gekennzeichnete Stelle.An exemplary embodiment of the invention will now be described with reference to the figures 2 and 3. Those parts that are already described in Fig. 1, have been given the same reference numerals in FIG. The section that appears in the Fig. 3 is shown in Fig. 2 is the point marked A.

Mit 1 ist in Fig. 2 eine Keramikmetallkapsel bezeichnet, die einen zylindrischen isolierenden Behälter le aus Keramik, einen Flansch 1b aus einer Eisen-Nickel-Legierung mit einem Kupferanodenblock 1a, der mit Silberlot an einem Rand des einen öffnungsendes des isolierenden Behälters so befestigt ist, daß er die Öffnungsfläche verschließt, einen Schweißring 1d aus Eisen-Nickel-Legierung, der am gegenüberliegenden öffnungsende mit Silberlot befestigt ist, und eine rohrförmige, auswärts gerichtete Gateelektrode 1c aus Eisen-Nickel-Legierung aufweist, die mit Silberlot an einem bestimmten Punkt in die Wand des isolierenden Behälters 1e derart eingesetzt ist, daß sie die Wand durchsetzt. Außerdem ist die Innenwand des isolierenden Behälters le unterhalb der nach außen leitenden Gateelektrode 1c gestuft. Die Eisen-Nickel-Legierung ist für die Herstellung des Flansches 1b, den Schweißring 1d und die rohrförmige Gateelektrode 1c gewählt, da ihr Wärmeausdehnungskoeffizient demjenigen des Keramikmaterials, aus dem der isolierende Behälter 1e besteht, sehr nahe kommt.1 with a ceramic metal capsule is referred to in Fig. 2, the one cylindrical insulating container le made of ceramic, a flange 1b made of an iron-nickel alloy with a copper anode block 1a, which is attached with silver solder to one edge of one opening end the insulating container is fixed in such a way that it closes the opening area, a welding ring 1d made of iron-nickel alloy, the one at the opposite opening end attached with silver solder, and a tubular, outwardly directed gate electrode 1c made of iron-nickel alloy, which is joined with silver solder at a certain point is inserted into the wall of the insulating container 1e so as to be the wall interspersed. In addition, the inner wall of the insulating container le is below the stepped outward conductive gate electrode 1c. The iron-nickel alloy is for the manufacture of the flange 1b, the welding ring 1d and the tubular gate electrode 1c chosen because its coefficient of thermal expansion is that of the ceramic material, the end which the insulating container 1e is made very close.

Die Gateelektrode 1c dient auch zum Absaugen der Luft aus dem Behälter 1e und zum Einführen eines Inertgases aus Helium und Stickstoff. Schließlich wird das eine Ende des Gateelektrodenröhrchens 1 c verschmolzen.The gate electrode 1c also serves to suck the air out of the container 1e and for introducing an inert gas composed of helium and nitrogen. Finally will fused one end of the gate electrode tube 1c.

Die Innenwandstufe 1f erhält einen elektrisch leitenden Belag 1g. Dies ist am besten aus der Fig. 3 zu erkennen, aus der ersichtlich ist, daß die auf der gesamten Fläche der Stufe 1f durch Metallisieren ausgebildete Belagschicht 1g mit dem Gateelektrodenröhrchen 1c verbunden ist.The inner wall step 1f receives an electrically conductive covering 1g. This can best be seen from FIG. 3, from which it can be seen that the Plating layer formed by metallizing on the entire surface of the step 1f 1g is connected to the gate electrode tube 1c.

Figur 2 zeigt ein Thyristorelement 2. Dieses ist ein Halbleiterkörper, der mehrere p-n-Ubergänge bildet. Auf einer Hauptfläche des Plättchens ist mit der Anodenelektrode eine Kompensationsplatte aus Molybdän elektrisch verbunden, während auf der anderen Hauptfläche Bereiche eines isolierten Gate und einer Kathode ausgebildet sind und auf diesen Bereichen eine Gateelektrode und eine Kathodenelektrode gebildet sind. Auf den Kupferanodenblock 1a ist eine Kompensationsplatte so angeordnet, daß sie elektrisch damit verbunden ist. Das Thyristorelement 2 wird durch den Führungsring 3 gegenüber dem Isoliermaterial positioniert.Figure 2 shows a thyristor element 2. This is a semiconductor body, which forms several p-n junctions. On a main surface of the plate is with the Anode electrode electrically connected while a compensation plate made of molybdenum insulated gate and cathode regions are formed on the other major surface and a gate electrode and a cathode electrode are formed on these regions are. A compensation plate is arranged on the copper anode block 1a so that it is electrically connected to it. The thyristor element 2 is supported by the guide ring 3 positioned opposite the insulating material.

Mehrere Gateleiterdrähte 4 aus dünnen Aluminiumdrähten sind mit der Gateelektrode des Thyristorelementes 2 verbunden und durch Weichlöten, Hartlöten oder Ultraschallschweißen mit der Leiterschicht 1g fest verbunden. Die Gatezuleitungsdrähte 4 sind in Gatehülsen 5 aus Isoliermaterial eingesetzt.Several gate conductor wires 4 made of thin aluminum wires are connected to the Gate electrode of the thyristor element 2 connected and by soft soldering, hard soldering or ultrasonic welding firmly connected to the conductor layer 1g. The gate lead wires 4 are used in gate sleeves 5 made of insulating material.

Die Leiterschicht 1g kann einen ausreichend großen Flächenbereich aufweisen. Damit kann gemäß dem Gatestrom die Zahl der Zuleitungsdrähte und ihr Durchmesser frei bestimmt werden. Wenn keine isolierende Gatehülse verwendet wird, können die Gatezuleitungsdrähte 4 mit einem isolierenden Material beschichtet sein. Eine Kathodenkompensationsplatte 6 aus Molybdän oder dergleichen, die leitend mit der Kathodenelektrode des Thyristorelementes 2 verbunden ist, ist auf die andere Hauptfläche des Plättchens aufgelegt. Ein Kupferkathodenblock 7 mit einem Schweißring 7a aus Eisen-Nickel-Legierung ist auf die Kathodenkompensationsplatte aufgelegt und mit dieser leitend verbunden. Anschließend werden die Schweißringe 7a und 1d durch Lichtbogenschweißung miteinander verbunden, so daß das zweite öffnungsende des isolierenden Behälters 1e verschlossen ist.The conductor layer 1g can have a sufficiently large surface area exhibit. Thus, according to the gate current, the number of lead wires and you Diameter can be freely determined. If an insulating gate sleeve is not used, the gate lead wires 4 can be coated with an insulating material. A cathode compensation plate 6 made of molybdenum or the like, the is conductively connected to the cathode electrode of the thyristor element 2 is on the other major surface of the plate is placed. A copper cathode block 7 with a Welding ring 7a made of iron-nickel alloy is on the cathode compensation plate placed and conductively connected to this. Then the welding rings 7a and 1d joined together by arc welding so that the second opening end of the insulating container 1e is closed.

Bei diesem Ausführungsbeispiel ist die Leiterschicht 1g auf der Innenstufe 1f des Isolierstoffbehälters 1e durch Metallisierung hergestellt. Dieselbe Wirkung läßt sich auch durch folgendes Verfahren erzielen: Ein Metallring wird durch Metallisieren oder dergleichen auf den Innenwandfläche des isolierenden Behälters le ausgebildet, die keine abgesetzte Stufe aufweist, so daß dieser Metallring etwas über die Innenfläche hervorsteht, und er wird mit der rohrförmigen, nach außen leitenden Gateelektrode 1c verbunden.In this embodiment, the conductor layer 1g is on the inner step 1f of the insulating material container 1e produced by metallization. Same effect can also be achieved by the following process: A metal ring is made by metallizing or the like formed on the inner wall surface of the insulating container le, which has no stepped step, so that this metal ring slightly over the inner surface protrudes, and it is connected to the tubular, outwardly conductive gate electrode 1c connected.

Die vorangehende Beschreibung macht deutlich, daß ein Hochleistungstransistor oder ein Sperrgatetransistor (Gate turn-off thyristor) mit zahlreichen Gatezuführungsdrähten hergestellt werden kann. Dadurch ergeben sich auch bei hohen Basisströmen oder Gateströmen von 20 bis 100 A keine Probleme. Es läßt sich ein großer Steuerstrom bewältigen. Da die rohrförmige, nach außen leitende Gateelektrode und der darin eingesetzte Zuführungsdraht aus demselben Metall bestehen, tritt auch kein Drahtbruch mehr beim Verschweißen auf, und dadurch ist auch das Problem beseitigt, daß die Basis- oder Gate-Elektrode unterbrochen ist.The foregoing description makes it clear that a high power transistor or a gate turn-off thyristor with numerous gate lead wires can be produced. This also results in high base currents or gate currents from 20 to 100 A no problems. A large control current can be handled. Because the tubular, outwardly conductive gate electrode and the one inserted in it If the lead wire is made of the same metal, there is no more wire breakage Welding on, and this also eliminates the problem that the base or Gate electrode is interrupted.

Außerdem ist das Ende der Gateelektrodenröhre vollständig dicht durch Verschmelzen verschlossen, da die verschmolzenen und verschweißten Metalle derselben Art sind.In addition, the end of the gate electrode tube is completely tight Fusing closed because the fused and welded metals of the same Are kind.

Wie beschrieben, ist die Leiterschicht, durch die die dünnen Metalldrähte mit der nach außen leitenden Steuerelektrode verbunden sind, auf der Innenwand des isolierenden Behälters angebracht. Damit wird erzielt, daß der Steuerstrom einer Leistungs-Halbleitervorrichtung mit Steuerelektrode erhöht werden kann.As described, is the conductor layer through which the thin metal wires are connected to the outwardly conductive control electrode, on the inner wall of the insulating container attached. This ensures that the control current one Control electrode power semiconductor device can be increased.

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Claims (11)

Halbleitervorrichtung PATENTANSPRUCHE S Halbleitervorrichtung mit einem Halbleiterelement, das auf einer Fläche eine innere Steuerelektrode aufweist, einem das Halbleiterelement umschließenden isolierenden Behälter und einer nach außen reichenden Steuerelektrode, die am isolierenden Behälter angeordnet ist, gekennzeichnet durch eine Vielzahl dünner Leiter (4), die mit der inneren Steuerelektrode (6) des Halbleiterelementes verbunden sind, und einen elektrisch leitfähigen Bereich (mg), der auf der Innenwand des isolierenden Behälters (1) ausgebildet ist und über den die dünnen Leiter (4) mit der nach außen reichenden Steuerelektrode (1c) verbunden sind. Semiconductor device PATENT CLAIMS Semiconductor device with a semiconductor element which has an internal control electrode on one surface, an insulating container enclosing the semiconductor element and one after outside reaching control electrode, which is arranged on the insulating container, marked by a multitude of thin conductors (4) connected to the inner control electrode (6) of the Semiconductor element are connected, and an electrically conductive area (mg), which is formed on the inner wall of the insulating container (1) and over the the thin conductors (4) are connected to the outwardly reaching control electrode (1c) are. 2. Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß der elektrisch leitende Bereich eine leitfähige Schicht ist, die auf einem Absatz (if) auf der Innenwand des isolierenden Behälters (1) ausgebildet ist.2. Semiconductor device according to claim 1, characterized in that that the electrically conductive area is a conductive layer that is on a ledge (if) is formed on the inner wall of the insulating container (1). 3. Halbleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß der Absatz sich um den gesamten Umfang der Innenwand des isolierenden Behälters herumzieht.3. Semiconductor device according to claim 2, characterized in that that the shoulder extends around the entire circumference of the inner wall of the insulating container moves around. 4. Halbleitervorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß die leitfähige Schicht (ig) eine Metallschicht ist.4. Semiconductor device according to claim 2, characterized in that that the conductive layer (ig) is a metal layer. 5. Halbleitervorrichtung mit einem zylindrischen isolierenden Behälter, einem metallischen Anodenblock, der an einem Ende des zylindrischen isolierenden Behälters so befestigt ist, daß er ein öffnungsende des Behälters verschließt, einem Thyristorelement, das auf einer Hauptfläche eine Anode und auf der anderen Fläche eine Kathode und eine Gateelektrode aufweist, wobei das Thyristorelement auf der Hauptfläche des Metallanodenblocks so angeordnet ist, daß es mit der Anode leitend verbunden ist, einem Metallkathodenblock, der am anderen Ende des zylindrischen Behälters so befestigt ist, daß er das andere Ende des isolierenden Behälters verschließt und mit der Kathode des Thyristorelementes leitend verbunden ist, einer nach außen gerichteten Gateelektrode, die an der Wand des isolierenden Behälters derart verbunden ist, daß sie die Wand durchdringt, dadurch gekennzeichnet, daß auf der Innenwand des isolierenden Behälters (1) ein leitfähiger Bereich (log) ausgebildet ist, der mit der nach außen leitenden Gateelektrode (lc) verbunden ist, und daß zahlreiche Leiterdrähte (4) den leitfähigen Bereich (ig) mit der Gateelektrode (6) des Thyristorelementes verbinden.5. semiconductor device having a cylindrical insulating container; a metallic anode block attached to one end of the cylindrical insulating Container is attached so that it closes an opening end of the container, a Thyristor element which has an anode on one main surface and an anode on the other having a cathode and a gate electrode, the thyristor element on the Major surface of the metal anode block is arranged so that it is conductive with the anode connected, a metal cathode block, which is at the other end of the cylindrical Container is attached so that it closes the other end of the insulating container and is conductively connected to the cathode of the thyristor element, one to the outside directional gate electrode connected to the wall of the insulating container in such a way is that it penetrates the wall, characterized in that on the inner wall of the insulating container (1) a conductive area (log) is formed, the is connected to the outwardly conductive gate electrode (lc), and that numerous Conductor wires (4) the conductive area (ig) with the gate electrode (6) of the thyristor element associate. 6. Halbleitervorrichtung nach Anspruch 5, dadurch gekennzeichnet, daß die Innenwand des isolierenden Behälters (1) eine Stufe (1f) aufweist und der leitfähige Bereich (ig) auf dieser Stufe (if) ausgebildet ist.6. Semiconductor device according to claim 5, characterized in that that the inner wall of the insulating container (1) has a step (1f) and the conductive area (ig) is formed at this stage (if). 7. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß der Absatz sich um den gesamten Umfang der Innenwand des isolierenden Behälters herumzieht.7. The semiconductor device according to claim 6, characterized in that that the shoulder extends around the entire circumference of the inner wall of the insulating container moves around. 8. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die leitfähige Schicht (ig) eine Metallschicht ist.8. The semiconductor device according to claim 6, characterized in that that the conductive layer (ig) is a metal layer. 9. Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die dünnen Leiter (4) dünne Metalldrähte sind.9. Semiconductor device according to claim 1, characterized in that that the thin conductors (4) are thin metal wires. 10. Halbleitervorrichtung nach Anspruch 9, dadurch gekennzeichnet, daß die Drähte (4) eine Umhüllung (5) aus Isoliermaterial aufweisen.10. Semiconductor device according to claim 9, characterized in that that the wires (4) have a sheath (5) made of insulating material. 11. Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß der elektrisch leitende Bereich (ig) eine auf der Innenwand und auf dem sich radial einwärts erstreckenden Wandabschnitt ausgebildete metallisierte Schicht ist.11. The semiconductor device according to claim 1, characterized in that that the electrically conductive area (ig) one on the inner wall and one on the itself is formed radially inwardly extending wall portion metallized layer.
DE19833308389 1982-03-09 1983-03-09 Semiconductor device Granted DE3308389A1 (en)

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JP57038904A JPS58154239A (en) 1982-03-09 1982-03-09 Semiconductor device

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DE3308389C2 DE3308389C2 (en) 1989-01-05

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JPS6332255B2 (en) 1988-06-29
JPS58154239A (en) 1983-09-13

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