JPS6332255B2 - - Google Patents

Info

Publication number
JPS6332255B2
JPS6332255B2 JP3890482A JP3890482A JPS6332255B2 JP S6332255 B2 JPS6332255 B2 JP S6332255B2 JP 3890482 A JP3890482 A JP 3890482A JP 3890482 A JP3890482 A JP 3890482A JP S6332255 B2 JPS6332255 B2 JP S6332255B2
Authority
JP
Japan
Prior art keywords
gate
conductive layer
control electrode
pipe
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3890482A
Other languages
Japanese (ja)
Other versions
JPS58154239A (en
Inventor
Yuzuru Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57038904A priority Critical patent/JPS58154239A/en
Priority to DE19833308389 priority patent/DE3308389A1/en
Publication of JPS58154239A publication Critical patent/JPS58154239A/en
Publication of JPS6332255B2 publication Critical patent/JPS6332255B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To realize application of a large capacity control current by connecting an internal control electrode ane external leadout control electrode of a semiconductor element through a conductive layer provided at the internal wall of an insulated package. CONSTITUTION:A thyristor element 2 is positioned by a guide ring 3 and a cathode copper block 7 is placed through a cathode compensating plate 6 to a ceramic metal seal 1 consisting of an anode copper block 1a, a flange 1b, a gate pipe 1c, a welding ring 1d and a ceramic cylinder 1e. The seal 1 is also provided with a stepped part 1f and a conductive layer 1g connected to the gate pipe 1c is formed at the entire part of such stepped part. The gate electrode of thyristor element 2 is connected to the conductive layer 1g with a plurality of gate lead wires 4. Since a plurality of gate lead wires 4 can be extended as explained above, a large capacity gate current can be used.

Description

【発明の詳細な説明】 この発明は半導体装置に関するものであり、特
に制御電極を有する半導体装置の改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to an improvement in a semiconductor device having a control electrode.

第１図は従来のゲート・ターンオフ・サイリス
タの断面図である。このようなゲート・ターンオ
フ・サイリスタは通常大電力用サイリスタと同様
の平形パツケージが用いられている。第１図にお
いて１はセラミツクメタルシールであり、セラミ
ツク筒１ｅに陽極銅ブロツク１ａとフランジ１ｂ
が銀ロー付され、且つ一方の端部には溶接リング
１ｄが銀ロー付されている。またセラミツク筒１
ｅの任意の場所にゲートパイプ１ｃが銀ロー付さ
れている。前記セラミツクメタルシール１にはサ
イリスタエレメント２が設置され、ガイドリング
３により位置決めされている。サイリスタエレメ
ント２には陰極補償板６が載置される。サイリス
タエレメント２のゲート電極にアルミニユーム等
のゲートリード線４がボンデイングされこのゲー
トリード線４にゲートスリーブが挿入され、この
状態でセラミツクメタルシール１のゲートパイプ
１ｃに挿入される。前記陰極補償板６上には陰極
７が載置されこの陰極７に溶接リング７ａが取り
付けられこの溶接リング７ａと溶接リング１ｄが
溶接される。さらにゲートパイプ１ｃによりセラ
ミツクシール内部空気は排気され、不活性ガスが
封入されると共にゲートパイプ１ｃの端部が封止
溶接される。このようにしてゲートターンオフサ
イリスタは作られる。 FIG. 1 is a cross-sectional view of a conventional gate turn-off thyristor. Such a gate turn-off thyristor usually uses a flat package similar to a high-power thyristor. In Fig. 1, 1 is a ceramic metal seal, in which a ceramic tube 1e has an anode copper block 1a and a flange 1b.
is soldered with silver, and a welding ring 1d is soldered with silver on one end. Also, ceramic cylinder 1
A gate pipe 1c is soldered with silver at an arbitrary location of e. A thyristor element 2 is installed in the ceramic metal seal 1 and positioned by a guide ring 3. A cathode compensation plate 6 is placed on the thyristor element 2 . A gate lead wire 4 made of aluminum or the like is bonded to the gate electrode of the thyristor element 2, a gate sleeve is inserted into the gate lead wire 4, and in this state is inserted into the gate pipe 1c of the ceramic metal seal 1. A cathode 7 is placed on the cathode compensating plate 6, a welding ring 7a is attached to the cathode 7, and the welding ring 7a and the welding ring 1d are welded together. Further, the air inside the ceramic seal is exhausted through the gate pipe 1c, and an inert gas is filled in. At the same time, the end of the gate pipe 1c is sealed and welded. In this way, a gate turn-off thyristor is made.

上記従来のゲートターンオフサイリスタにおい
てはゲート電極とゲートリード線との接続は一般
的にアルミニユーム細線をボンデイングすること
により行われているが、一般のサイリスタの様な
ゲート電流が数アンペア程度のものに比べゲー
ト・ターンオフ・サイリスタの場合はゲート電流
が20〜100A程度の大電流を取扱わなくてはなら
ず、このような構造では電流容量不足という問題
があつた。またゲートパイプにアルミニユーム細
線を取り出して封止溶接する場合に、アルミニユ
ーム線が柔らかく、溶融温度が低い為にアルミニ
ユーム線が断線したり、導電性材料である為、溶
接条件が難かしくリーク不良が発生する場合があ
つた。 In the conventional gate turn-off thyristor mentioned above, the connection between the gate electrode and the gate lead wire is generally made by bonding a thin aluminum wire. In the case of a gate turn-off thyristor, the gate current must handle a large current of about 20 to 100 A, and such a structure has the problem of insufficient current capacity. In addition, when taking out thin aluminum wire and sealing welding it to the gate pipe, the aluminum wire is soft and has a low melting temperature, so the aluminum wire may break, or because it is a conductive material, welding conditions are difficult and leakage defects occur. There were times when I did.

本発明は、上記従来のゲートターンオフサイリ
スタの欠点を取除く為になされたものであつて、
絶縁容器の内壁に設けられ外部導出制御電極と複
数の金属細線とを互に接続する導電層を設け外部
導出制御電極に大電流を流すことができる半導体
装置を提供するものである。 The present invention was made to eliminate the drawbacks of the conventional gate turn-off thyristors, and includes:
The present invention provides a semiconductor device in which a conductive layer is provided on the inner wall of an insulating container and connects an externally led control electrode and a plurality of thin metal wires to each other, thereby allowing a large current to flow through the externally leading control electrode.

以下本発明の一実施例を第２図により詳細に説
明する。第２図において第１図と同一符号は第１
図に示したものと同等のものを表わしている。第
３図は第２図Ａ部の拡大図である。１はセラミツ
クメタルシールであり、セラミツク筒１ｅ一端に
陽極銅ブロツク１ａと鉄−ニツケル系合金からな
る、フランジ１ｂが銀ロー付されている。フラン
ジ１ｂに鉄−ニツケル系合金が用いられるのはセ
ラミツクシール１ｅと熱膨張係数が近い為であ
る。一方のセラミツク筒１ｅ他端には溶接リング
１ｄが銀ロー付されている。通常この材料も鉄−
ニツケル系合金が用いられる。さらにセラミツク
筒１ｅの壁部の任意の場所これを貫通するように
ゲートパイプ１ｃが銀ロー付されているゲートパ
イプも通常鉄−ニツケル系合金が使われている。
前記ゲートパイプの下部セラミツク筒１ｅ内側面
に段部１ｆが設けられており、この段部１ｆに導
電層１ｇが設けられている。第３図に詳細を示す
ようにこの導電層１ｇは段部１ｆ全面にメタライ
ズ法で形成すると共に、ゲートパイプ１ｃに接続
される。 An embodiment of the present invention will be described in detail below with reference to FIG. In Figure 2, the same symbols as in Figure 1 are
It represents something equivalent to what is shown in the figure. FIG. 3 is an enlarged view of section A in FIG. 2. Reference numeral 1 designates a ceramic metal seal, in which an anode copper block 1a and a flange 1b made of an iron-nickel alloy are silver-brazed to one end of a ceramic tube 1e. The reason why an iron-nickel alloy is used for the flange 1b is that it has a coefficient of thermal expansion close to that of the ceramic seal 1e. A welding ring 1d is soldered with silver to the other end of one ceramic cylinder 1e. Usually this material is also iron.
A nickel-based alloy is used. Further, the gate pipe 1c is silver-brazed so as to pass through the wall of the ceramic tube 1e at an arbitrary location, and the gate pipe is usually made of an iron-nickel alloy.
A stepped portion 1f is provided on the inner surface of the lower ceramic cylinder 1e of the gate pipe, and a conductive layer 1g is provided on this stepped portion 1f. As shown in detail in FIG. 3, this conductive layer 1g is formed on the entire surface of the step portion 1f by a metallization method, and is connected to the gate pipe 1c.

このような段部１ｆに設けられた導電層１ｇに
代え、例えば前記段部１ｆを形成しないセラミツ
ク筒１ｅの内壁面にこれから張り出すようにゲー
トパイプ１ｃにメタライズ等で接続された金属環
を設けても前記導電１ｇと同様の機能を達成する
ことができる。２はサイリスタエレメントであ
り、予め、複数のＰ−ｎ接合を内部に形成した半
導体ウエハであつて、一方の主面には、モリブデ
ン等の補償板が取付けられ、前記ウエハの他方の
主面にはそれぞれ分離形成された、ゲートおよび
カソード領域が形成され、これらの領域にはそれ
ぞれゲート電極、カソード電極が形成される。さ
らにモリブデン等よりなる陰極補償板６が、前記
カソード電極上に載置される。前記サイリスタエ
レメント２は絶縁物よりなるガイドリング３によ
り位置決めされる。サイリスタエレメント２のゲ
ート電極には、アルミニユーム細線等よりなる複
数のゲートリード線４が接続され、このゲートリ
ード線４は前記セラミツクシール１内側円周面に
もうけられた、導電層１ｇに取付けられる。導電
層１ｇは十分広い面積に形成することができる為
ゲート電流の容量に応じて線径、本数を決定出来
るので大電流となつても十分対応が出来る。ゲー
トリード線４にはゲートスリーブ５が被覆されて
いる。ゲートスリーブ５は絶縁物で作られるが絶
縁チユーブを用いない場合は、絶縁塗布材料を塗
布して絶縁してもよい。ゲートリード線４は導電
層１ｇに半田付、ロー付、超音波溶接等により接
続される。さらにあらかじめ溶接リング７ａが取
付られた陰極銅ブロツク７を載置して前記容接リ
ング７ａと前記の溶接リング１ｄ端部をアーク溶
接より結合する。次に前記ゲートパイプ１ｃより
セラミツクシール１内の空気を排気すると共に、
この内部にヘリウムと窒素ガス等よりなる不活性
ガスを入れてゲートパイプ端末を封止溶接する。 Instead of the conductive layer 1g provided on the stepped portion 1f, for example, a metal ring connected to the gate pipe 1c by metallization or the like may be provided on the inner wall surface of the ceramic tube 1e where the stepped portion 1f is not formed so as to overhang from the inner wall surface of the ceramic cylinder 1e. However, the same function as the conductive 1g can be achieved. Reference numeral 2 designates a thyristor element, which is a semiconductor wafer in which a plurality of P-n junctions are formed in advance.A compensating plate made of molybdenum or the like is attached to one main surface, and a compensating plate made of molybdenum or the like is attached to the other main surface of the wafer. Separately formed gate and cathode regions are formed, and a gate electrode and a cathode electrode are formed in these regions, respectively. Further, a cathode compensation plate 6 made of molybdenum or the like is placed on the cathode electrode. The thyristor element 2 is positioned by a guide ring 3 made of an insulator. A plurality of gate lead wires 4 made of thin aluminum wire or the like are connected to the gate electrode of the thyristor element 2, and these gate lead wires 4 are attached to a conductive layer 1g provided on the inner circumferential surface of the ceramic seal 1. Since the conductive layer 1g can be formed over a sufficiently large area, the diameter and number of wires can be determined according to the capacity of the gate current, so that it can adequately cope with large currents. The gate lead wire 4 is covered with a gate sleeve 5. The gate sleeve 5 is made of an insulating material, but if an insulating tube is not used, it may be insulated by applying an insulating coating material. The gate lead wire 4 is connected to the conductive layer 1g by soldering, brazing, ultrasonic welding, or the like. Furthermore, a cathode copper block 7 to which a welding ring 7a has been attached in advance is placed, and the ends of the receiving ring 7a and the welding ring 1d are joined by arc welding. Next, the air inside the ceramic seal 1 is exhausted from the gate pipe 1c, and
An inert gas consisting of helium, nitrogen gas, etc. is put inside this, and the end of the gate pipe is sealed and welded.

以上説明したように、大電力用トランジスタ、
ゲート・ターンオフサイリスタにおいて、ゲート
リード線が何本も取出すことが出来ることにより
ベース電流またはゲート電流が20〜100アンペア
程度の大電流となつても問題なく制御電流の大容
量化が可能となる。またベースパイプまたはゲー
トパイプに異種金属のベースリード線またはゲー
トリード線が挿入されない為、ベースリード線ま
たはゲートリード線の断線溶断等がなくなりベー
スオープン、ゲートオープンといつた特性不良が
完全になくなる。また異種金属の溶接を行わない
為ベースパイプまたはゲートパイプ端部の封止溶
接する場合にリーク不良も完全になくなる。 As explained above, high power transistors,
In a gate turn-off thyristor, since multiple gate lead wires can be taken out, it is possible to increase the capacity of the control current without any problem even if the base current or gate current becomes a large current of about 20 to 100 amperes. In addition, since no base lead wire or gate lead wire of a different metal is inserted into the base pipe or gate pipe, there is no disconnection or melting of the base lead wire or gate lead wire, and characteristic defects such as base open and gate open are completely eliminated. Furthermore, since dissimilar metals are not welded, leakage defects are completely eliminated when sealing the end of the base pipe or gate pipe.

以上の説明のように本発明によれば絶縁容器の
内壁に設けられ、外部導出制御電極と複数の金属
細線とを互に接続する導電層を設けたので制御電
極を有する電力用半導体装置の制御電流の大容量
化が可能になるという優れた効果を有する。 As described above, according to the present invention, a conductive layer is provided on the inner wall of an insulating container and connects an external control electrode and a plurality of thin metal wires, thereby controlling a power semiconductor device having a control electrode. This has the excellent effect of increasing the current capacity.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のゲート・ターンオフ・サイリス
タの断面図、第２図は本発明の一実施例の断面
図、第３図は第２図の要部拡大斜視図である。 １はセラミツクメタルシール、１ｃはゲートパ
イプ、１ｆは段部、１ｇは導電層、２はサイリス
タエレメント、４はゲートリード線である。 FIG. 1 is a sectional view of a conventional gate turn-off thyristor, FIG. 2 is a sectional view of an embodiment of the present invention, and FIG. 3 is an enlarged perspective view of the main part of FIG. 1 is a ceramic metal seal, 1c is a gate pipe, 1f is a step, 1g is a conductive layer, 2 is a thyristor element, and 4 is a gate lead wire.

Claims (1)

【特許請求の範囲】[Claims] １ 表面に内部制御電極を有する半導体素子と、
この半導体素子を囲繞する絶縁容器と、この絶縁
容器に設けられた外部導出制御電極と、前記半導
体素子の内部制御電極に接続される複数の金属細
線と、前記絶縁容器の内壁に設けられ、前記外部
導出制御電極と前記複数の金属細線とを互に接続
する導電層を備えた半導体装置。1. A semiconductor element having an internal control electrode on its surface;
an insulating container surrounding the semiconductor element; an external control electrode provided in the insulating container; a plurality of thin metal wires connected to the internal control electrode of the semiconductor element; A semiconductor device comprising a conductive layer that interconnects an externally led control electrode and the plurality of thin metal wires.
JP57038904A 1982-03-09 1982-03-09 Semiconductor device Granted JPS58154239A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57038904A JPS58154239A (en) 1982-03-09 1982-03-09 Semiconductor device
DE19833308389 DE3308389A1 (en) 1982-03-09 1983-03-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038904A JPS58154239A (en) 1982-03-09 1982-03-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS58154239A JPS58154239A (en) 1983-09-13
JPS6332255B2 true JPS6332255B2 (en) 1988-06-29

Family

ID=12538177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038904A Granted JPS58154239A (en) 1982-03-09 1982-03-09 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS58154239A (en)
DE (1) DE3308389A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643633Y2 (en) * 1986-10-27 1994-11-14 東陶機器株式会社 Automatic bath equipment
JPH0781719B2 (en) * 1988-10-31 1995-09-06 リンナイ株式会社 Air conditioner heating water heater

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215125B (en) * 1988-02-22 1991-04-24 Mitsubishi Electric Corp Semiconductor device
DE19615112A1 (en) * 1996-04-17 1997-10-23 Asea Brown Boveri Power semiconductor component with two-lid housing
CN110026640A (en) * 2019-05-15 2019-07-19 江阴市赛英电子股份有限公司 A kind of thin electrode ceramic soldering shell with the silver-colored structure of resistance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564444C3 (en) * 1966-03-24 1978-05-11 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Semiconductor arrangement with an insulating carrier
SE373689B (en) * 1973-06-12 1975-02-10 Asea Ab SEMICONDUCTOR DEVICE CONSISTING OF A THYRISTOR WITH CONTROL POWER, WHICH SEMICONDUCTOR DISC IS INCLUDED IN A BOX
DE2534703C3 (en) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Switchable thyristor
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
DE2855493A1 (en) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie PERFORMANCE SEMICONDUCTOR COMPONENT

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643633Y2 (en) * 1986-10-27 1994-11-14 東陶機器株式会社 Automatic bath equipment
JPH0781719B2 (en) * 1988-10-31 1995-09-06 リンナイ株式会社 Air conditioner heating water heater

Also Published As

Publication number Publication date
DE3308389C2 (en) 1989-01-05
DE3308389A1 (en) 1983-11-17
JPS58154239A (en) 1983-09-13

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