JPS6332255B2 - - Google Patents

Info

Publication number
JPS6332255B2
JPS6332255B2 JP3890482A JP3890482A JPS6332255B2 JP S6332255 B2 JPS6332255 B2 JP S6332255B2 JP 3890482 A JP3890482 A JP 3890482A JP 3890482 A JP3890482 A JP 3890482A JP S6332255 B2 JPS6332255 B2 JP S6332255B2
Authority
JP
Japan
Prior art keywords
gate
conductive layer
control electrode
pipe
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3890482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154239A (ja
Inventor
Yuzuru Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57038904A priority Critical patent/JPS58154239A/ja
Priority to DE19833308389 priority patent/DE3308389A1/de
Publication of JPS58154239A publication Critical patent/JPS58154239A/ja
Publication of JPS6332255B2 publication Critical patent/JPS6332255B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)
JP57038904A 1982-03-09 1982-03-09 半導体装置 Granted JPS58154239A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57038904A JPS58154239A (ja) 1982-03-09 1982-03-09 半導体装置
DE19833308389 DE3308389A1 (de) 1982-03-09 1983-03-09 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038904A JPS58154239A (ja) 1982-03-09 1982-03-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS58154239A JPS58154239A (ja) 1983-09-13
JPS6332255B2 true JPS6332255B2 (enrdf_load_stackoverflow) 1988-06-29

Family

ID=12538177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038904A Granted JPS58154239A (ja) 1982-03-09 1982-03-09 半導体装置

Country Status (2)

Country Link
JP (1) JPS58154239A (enrdf_load_stackoverflow)
DE (1) DE3308389A1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215125B (en) * 1988-02-22 1991-04-24 Mitsubishi Electric Corp Semiconductor device
DE19615112A1 (de) * 1996-04-17 1997-10-23 Asea Brown Boveri Leistungshalbleiterbauelement
CN110026640A (zh) * 2019-05-15 2019-07-19 江阴市赛英电子股份有限公司 一种具有阻银结构的薄型电极钎焊陶瓷管壳

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564444C3 (de) * 1966-03-24 1978-05-11 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Halbleiteranordnung mit einem isolierenden Träger
SE373689B (sv) * 1973-06-12 1975-02-10 Asea Ab Halvledaranordning bestaende av en tyristor med styrelektrod, vars halvledarskiva er innesluten i en dosa
DE2534703C3 (de) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement

Also Published As

Publication number Publication date
DE3308389A1 (de) 1983-11-17
JPS58154239A (ja) 1983-09-13
DE3308389C2 (enrdf_load_stackoverflow) 1989-01-05

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