DE3280112D1 - Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium. - Google Patents
Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.Info
- Publication number
- DE3280112D1 DE3280112D1 DE8282106293T DE3280112T DE3280112D1 DE 3280112 D1 DE3280112 D1 DE 3280112D1 DE 8282106293 T DE8282106293 T DE 8282106293T DE 3280112 T DE3280112 T DE 3280112T DE 3280112 D1 DE3280112 D1 DE 3280112D1
- Authority
- DE
- Germany
- Prior art keywords
- photovoltaic device
- amorphous semiconductor
- device made
- amorphic silicon
- amorphic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56112571A JPS5814582A (ja) | 1981-07-17 | 1981-07-17 | 高効率のアモルフアスシリコン系太陽電池 |
JP56112572A JPS5814583A (ja) | 1981-07-17 | 1981-07-17 | アモルフアス半導体およびアモルフアス半導体/アモルフアスシリコン・ヘテロ接合光起電力素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3280112D1 true DE3280112D1 (de) | 1990-03-15 |
Family
ID=26451701
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282106293T Expired - Fee Related DE3280112D1 (de) | 1981-07-17 | 1982-07-14 | Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium. |
DE8888117644T Expired - Fee Related DE3280418T2 (de) | 1981-07-17 | 1982-07-14 | Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888117644T Expired - Fee Related DE3280418T2 (de) | 1981-07-17 | 1982-07-14 | Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium. |
Country Status (3)
Country | Link |
---|---|
US (3) | US4450316A (de) |
EP (2) | EP0070509B2 (de) |
DE (2) | DE3280112D1 (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3280112D1 (de) * | 1981-07-17 | 1990-03-15 | Kanegafuchi Chemical Ind | Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium. |
JPS58137264A (ja) * | 1982-02-09 | 1983-08-15 | Fuji Electric Corp Res & Dev Ltd | 光電変換装置 |
JPS5961077A (ja) * | 1982-09-29 | 1984-04-07 | Nippon Denso Co Ltd | アモルフアスシリコン太陽電池 |
US4593152A (en) * | 1982-11-24 | 1986-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US4599482A (en) * | 1983-03-07 | 1986-07-08 | Semiconductor Energy Lab. Co., Ltd. | Semiconductor photoelectric conversion device and method of making the same |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
JPS6068663A (ja) * | 1983-09-26 | 1985-04-19 | Komatsu Denshi Kinzoku Kk | アモルフアスシリコン太陽電池 |
JPS6174638A (ja) * | 1984-09-19 | 1986-04-16 | Agency Of Ind Science & Technol | 機能性有機・無機複合非晶質材料及びその製造方法 |
US4738729A (en) * | 1984-10-19 | 1988-04-19 | Toshihiko Yoshida | Amorphous silicon semiconductor solar cell |
DE3527363A1 (de) * | 1985-05-17 | 1986-11-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung einer raeumlich periodischen halbleiter-schichtenfolge |
US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
US4843439A (en) * | 1985-08-28 | 1989-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
JPS62198169A (ja) * | 1986-02-25 | 1987-09-01 | Fuji Electric Corp Res & Dev Ltd | 太陽電池 |
JPH07101598B2 (ja) * | 1986-06-27 | 1995-11-01 | 株式会社日立製作所 | 撮像管 |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
EP0283699B1 (de) * | 1987-03-23 | 1994-06-15 | Hitachi, Ltd. | Photoelektrische Umwandlungsanordnung |
JP2616929B2 (ja) * | 1987-08-22 | 1997-06-04 | 株式会社日本自動車部品総合研究所 | 微結晶炭化ケイ素半導体膜の製造方法 |
JP2692091B2 (ja) * | 1987-10-31 | 1997-12-17 | 株式会社日本自動車部品総合研究所 | 炭化ケイ素半導体膜およびその製造方法 |
FR2631346B1 (fr) * | 1988-05-11 | 1994-05-20 | Air Liquide | Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications |
US5130775A (en) * | 1988-11-16 | 1992-07-14 | Yamatake-Honeywell Co., Ltd. | Amorphous photo-detecting element with spatial filter |
JPH02210715A (ja) * | 1989-02-08 | 1990-08-22 | Nippon Sheet Glass Co Ltd | 二層構造を有する透明導電基体 |
JP2846651B2 (ja) * | 1989-03-31 | 1999-01-13 | 三洋電機株式会社 | 光起電力装置 |
IL95097A0 (en) * | 1989-08-23 | 1991-06-10 | Himont Inc | Thermoplastic olefin polymer and its preparation |
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
US4969956A (en) * | 1989-12-19 | 1990-11-13 | The United States Of America As Represented By The Secretary Of Commerce | Transparent thin film thermocouple |
IL96561A0 (en) * | 1989-12-28 | 1991-09-16 | Minnesota Mining & Mfg | Amorphous silicon sensor |
US5155567A (en) * | 1990-01-17 | 1992-10-13 | Ricoh Company, Ltd. | Amorphous photoconductive material and photosensor employing the photoconductive material |
JP3099957B2 (ja) * | 1990-01-17 | 2000-10-16 | 株式会社リコー | 光導電部材 |
US5212395A (en) * | 1992-03-02 | 1993-05-18 | At&T Bell Laboratories | P-I-N photodiodes with transparent conductive contacts |
JP2944014B2 (ja) * | 1993-04-19 | 1999-08-30 | シャープ株式会社 | 光走査型表示装置 |
AUPM512194A0 (en) * | 1994-04-15 | 1994-05-12 | Chulalongkorn University | Amorphous semiconductor photocoupler |
EP0898303A3 (de) * | 1997-08-22 | 1999-04-07 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Elektrisch isolierendes Dünnschichtsystem mit definierter elektrischer Restleitfähigkeit |
US5935705A (en) * | 1997-10-15 | 1999-08-10 | National Science Council Of Republic Of China | Crystalline Six Cy Nz with a direct optical band gap of 3.8 eV |
US6344608B2 (en) * | 1998-06-30 | 2002-02-05 | Canon Kabushiki Kaisha | Photovoltaic element |
JP3869952B2 (ja) * | 1998-09-21 | 2007-01-17 | キヤノン株式会社 | 光電変換装置とそれを用いたx線撮像装置 |
US20040135209A1 (en) * | 2002-02-05 | 2004-07-15 | Tzu-Chiang Hsieh | Camera with MOS or CMOS sensor array |
US7985919B1 (en) * | 2006-08-18 | 2011-07-26 | Nanosolar, Inc. | Thermal management for photovoltaic devices |
US20080078441A1 (en) * | 2006-09-28 | 2008-04-03 | Dmitry Poplavskyy | Semiconductor devices and methods from group iv nanoparticle materials |
US8076571B2 (en) | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US8203073B2 (en) | 2006-11-02 | 2012-06-19 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US7964788B2 (en) * | 2006-11-02 | 2011-06-21 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
EP2208238B1 (de) * | 2007-11-09 | 2013-04-24 | Sunpreme Inc. | Kostengünstige solarzellen und herstellungsverfahren dafür |
US8129613B2 (en) * | 2008-02-05 | 2012-03-06 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having low base resistivity and method of making |
US8481845B2 (en) * | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
KR20100021845A (ko) * | 2008-08-18 | 2010-02-26 | 삼성전자주식회사 | 적층형 태양 전지 |
US8022291B2 (en) | 2008-10-15 | 2011-09-20 | Guardian Industries Corp. | Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device |
US8796066B2 (en) * | 2008-11-07 | 2014-08-05 | Sunpreme, Inc. | Low-cost solar cells and methods for fabricating low cost substrates for solar cells |
US7951640B2 (en) | 2008-11-07 | 2011-05-31 | Sunpreme, Ltd. | Low-cost multi-junction solar cells and methods for their production |
US8535760B2 (en) * | 2009-09-11 | 2013-09-17 | Air Products And Chemicals, Inc. | Additives to silane for thin film silicon photovoltaic devices |
US8003431B2 (en) * | 2009-10-21 | 2011-08-23 | Electronics And Telecommunications Research Institute | Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same |
US8348504B2 (en) | 2010-05-12 | 2013-01-08 | Wireless Sensor Technologies, Llc | Wireless temperature measurement system and methods of making and using same |
US20120325305A1 (en) * | 2011-06-21 | 2012-12-27 | International Business Machines Corporation | Ohmic contact between thin film solar cell and carbon-based transparent electrode |
ITMI20111559A1 (it) * | 2011-08-30 | 2013-03-01 | St Microelectronics Srl | Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione |
US9472702B1 (en) | 2012-11-19 | 2016-10-18 | Sandia Corporation | Photovoltaic cell with nano-patterned substrate |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
US4104084A (en) * | 1977-06-06 | 1978-08-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solar cells having integral collector grids |
CA1123525A (en) * | 1977-10-12 | 1982-05-11 | Stanford R. Ovshinsky | High temperature amorphous semiconductor member and method of making same |
US4254429A (en) * | 1978-07-08 | 1981-03-03 | Shunpei Yamazaki | Hetero junction semiconductor device |
JPS5529154A (en) * | 1978-08-23 | 1980-03-01 | Shunpei Yamazaki | Semiconductor device |
US4388482A (en) * | 1981-01-29 | 1983-06-14 | Yoshihiro Hamakawa | High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon |
JPS57204182A (en) * | 1981-06-11 | 1982-12-14 | Matsushita Electric Ind Co Ltd | Semiconductor device |
DE3280112D1 (de) * | 1981-07-17 | 1990-03-15 | Kanegafuchi Chemical Ind | Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium. |
-
1982
- 1982-07-14 DE DE8282106293T patent/DE3280112D1/de not_active Expired - Fee Related
- 1982-07-14 EP EP82106293A patent/EP0070509B2/de not_active Expired - Lifetime
- 1982-07-14 EP EP88117644A patent/EP0309000B1/de not_active Expired - Lifetime
- 1982-07-14 DE DE8888117644T patent/DE3280418T2/de not_active Expired - Fee Related
- 1982-07-19 US US06/399,312 patent/US4450316A/en not_active Expired - Fee Related
-
1983
- 1983-11-17 US US06/552,951 patent/US4499331A/en not_active Expired - Lifetime
- 1983-11-17 US US06/552,952 patent/US4491682A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0309000B1 (de) | 1992-10-14 |
EP0070509A2 (de) | 1983-01-26 |
EP0070509A3 (en) | 1986-08-27 |
EP0309000A2 (de) | 1989-03-29 |
EP0309000A3 (en) | 1989-05-31 |
DE3280418T2 (de) | 1993-03-04 |
US4450316A (en) | 1984-05-22 |
US4491682A (en) | 1985-01-01 |
EP0070509B1 (de) | 1990-02-07 |
EP0070509B2 (de) | 1993-05-19 |
DE3280418D1 (de) | 1992-11-19 |
US4499331A (en) | 1985-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8339 | Ceased/non-payment of the annual fee |