DE3278096D1 - Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions - Google Patents

Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions

Info

Publication number
DE3278096D1
DE3278096D1 DE8282110810T DE3278096T DE3278096D1 DE 3278096 D1 DE3278096 D1 DE 3278096D1 DE 8282110810 T DE8282110810 T DE 8282110810T DE 3278096 T DE3278096 T DE 3278096T DE 3278096 D1 DE3278096 D1 DE 3278096D1
Authority
DE
Germany
Prior art keywords
gallium arsenide
drain
gate
self
mesfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282110810T
Other languages
English (en)
Inventor
Thomas L Andrade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3278096D1 publication Critical patent/DE3278096D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0891—Source or drain regions of field-effect devices of field-effect transistors with Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8282110810T 1981-12-07 1982-11-23 Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions Expired DE3278096D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/327,832 US4404732A (en) 1981-12-07 1981-12-07 Self-aligned extended epitaxy mesfet fabrication process

Publications (1)

Publication Number Publication Date
DE3278096D1 true DE3278096D1 (en) 1988-03-10

Family

ID=23278260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282110810T Expired DE3278096D1 (en) 1981-12-07 1982-11-23 Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions

Country Status (4)

Country Link
US (1) US4404732A (de)
EP (1) EP0083716B1 (de)
JP (1) JPS5898982A (de)
DE (1) DE3278096D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143577A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 埋め込みゲ−ト電界効果トランジスタの製造方法
JPS5979576A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 電界効果型半導体装置
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4601096A (en) * 1983-02-15 1986-07-22 Eaton Corporation Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy
JPH0618217B2 (ja) * 1983-03-03 1994-03-09 日本電気株式会社 半導体装置の製造方法
JPS59181067A (ja) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JPS6077468A (ja) * 1983-10-04 1985-05-02 Nec Corp 電界効果トランジスタの製造方法
JPS60136264A (ja) * 1983-12-23 1985-07-19 Nec Corp 半導体装置の製造方法
US4637129A (en) * 1984-07-30 1987-01-20 At&T Bell Laboratories Selective area III-V growth and lift-off using tungsten patterning
JPS6143482A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
JPS61220376A (ja) * 1985-03-26 1986-09-30 Sumitomo Electric Ind Ltd ショットキゲート電界効果トランジスタの製造方法
US4710478A (en) * 1985-05-20 1987-12-01 United States Of America As Represented By The Secretary Of The Navy Method for making germanium/gallium arsenide high mobility complementary logic transistors
EP0208795A1 (de) * 1985-07-12 1987-01-21 International Business Machines Corporation Verfahren zum Herstellen eines selbstausrichtenden Feldeffekttransistors mit einem Metallhalbleiterkontakt
US4662060A (en) * 1985-12-13 1987-05-05 Allied Corporation Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4735913A (en) * 1986-05-06 1988-04-05 Bell Communications Research, Inc. Self-aligned fabrication process for GaAs MESFET devices
US4714685A (en) * 1986-12-08 1987-12-22 General Motors Corporation Method of fabricating self-aligned silicon-on-insulator like devices
US4716128A (en) * 1986-12-10 1987-12-29 General Motors Corporation Method of fabricating silicon-on-insulator like devices
US5011785A (en) * 1990-10-30 1991-04-30 The United States Of America As Represented By The Secretary Of The Navy Insulator assisted self-aligned gate junction
JPH0535743U (ja) * 1991-10-11 1993-05-14 株式会社貝印刃物開発センター 台紙に対する鋏の支持構造
KR0162865B1 (ko) * 1995-03-09 1999-02-01 김은영 반도체 패턴 측면의 에피성장율 조절방법
US5981148A (en) 1997-07-17 1999-11-09 International Business Machines Corporation Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby
TW406374B (en) 1997-07-17 2000-09-21 Ibm Method for forming transistors with raised source and drains and device formed thereby
KR100296126B1 (ko) 1998-12-22 2001-08-07 박종섭 고집적 메모리 소자의 게이트전극 형성방법
KR100299386B1 (ko) 1998-12-28 2001-11-02 박종섭 반도체 소자의 게이트 전극 형성방법
JP3988342B2 (ja) 1998-12-29 2007-10-10 株式会社ハイニックスセミコンダクター 半導体素子のゲート電極形成方法
KR100332106B1 (ko) * 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 제조 방법
GB2409333B (en) * 2003-12-10 2006-07-26 Intense Photonics Ltd Multiple anneal induced disordering
JP4274566B2 (ja) * 2005-04-25 2009-06-10 エルピーダメモリ株式会社 半導体装置の製造方法
US20120187505A1 (en) 2011-01-25 2012-07-26 International Business Machines Corporation Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation
KR102243492B1 (ko) * 2014-07-21 2021-04-23 삼성전자주식회사 반도체 장치 및 이의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
US3943622A (en) * 1972-12-26 1976-03-16 Westinghouse Electric Corporation Application of facet-growth to self-aligned Shottky barrier gate field effect transistors
US4077111A (en) * 1976-07-14 1978-03-07 Westinghouse Electric Corporation Self-aligned gate field effect transistor and method for making same
JPS5338272A (en) * 1976-09-20 1978-04-08 Sanyo Electric Co Ltd Production of schottky barrier gate type field effect transistor
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
US4336549A (en) * 1978-02-21 1982-06-22 Hughes Aircraft Company Schottky-barrier gate gallium arsenide field effect devices
US4236166A (en) * 1979-07-05 1980-11-25 Bell Telephone Laboratories, Incorporated Vertical field effect transistor
EP0064370B1 (de) * 1981-04-23 1989-06-28 Fujitsu Limited Halbleiteranordnung mit hoher Elektronenbeweglichkeit
JPS5857752A (ja) * 1981-09-30 1983-04-06 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US4404732A (en) 1983-09-20
EP0083716A3 (en) 1985-10-02
EP0083716A2 (de) 1983-07-20
EP0083716B1 (de) 1988-02-03
JPS5898982A (ja) 1983-06-13

Similar Documents

Publication Publication Date Title
DE3278096D1 (en) Process for forming iii-v semiconductor mesfet devices, having self-aligned raised source and drain regions
US4111725A (en) Selective lift-off technique for fabricating gaas fets
DE69524777T2 (de) Selbstausgerichteter feldeffekttransistor für hochfrequenzanwendungen
US4651179A (en) Low resistance gallium arsenide field effect transistor
CA3142312A1 (en) Ohmic contacts with direct access pathways to two-dimensional electron sheets
US4716128A (en) Method of fabricating silicon-on-insulator like devices
EP0286428A3 (de) Verfahren zur Herstellung eines Jonction-Feldeffekt-Transistors
US5381027A (en) Semiconductor device having a heterojunction and a two dimensional gas as an active layer
JPS5646562A (en) Semiconductor device
US5258631A (en) Semiconductor device having a two-dimensional electron gas as an active layer
FR2454703A1 (fr) Transistor a effet de champ et procede de fabrication
EP0063139A1 (de) Verfahren zur herstellung eines planaren iii-v-bipolaren transistors durch selektive ionenimplantation und nach diesem verfahren hergestellter transistor
JPS6474765A (en) Hetero-junction fet
KR940004852A (ko) 모스트랜지스터 구조 및 제조방법
KR940010557B1 (ko) 반도체장치
JPS57193070A (en) Forming method for gate electrode of schottky junction gate type field effect transistor
US4757358A (en) MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions
KR920005128B1 (ko) 접합형 전계효과 트랜지스터 제조방법
JPS57196582A (en) Field-effect transistor
JPS57208174A (en) Semiconductor device
Feng et al. GaAs MESFET's made by ion implantation into MOCVD buffer layers
JPH0810701B2 (ja) 接合型電界効果トランジスタの製造方法
JPS56105678A (en) Field-effect transistor
JPS5724569A (en) Uhf band gaas fet
GB1493828A (en) Semiconductors

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee