DE3210742A1 - Solarzellenbatterie und verfahren zum herstellen der batterie - Google Patents

Solarzellenbatterie und verfahren zum herstellen der batterie

Info

Publication number
DE3210742A1
DE3210742A1 DE19823210742 DE3210742A DE3210742A1 DE 3210742 A1 DE3210742 A1 DE 3210742A1 DE 19823210742 DE19823210742 DE 19823210742 DE 3210742 A DE3210742 A DE 3210742A DE 3210742 A1 DE3210742 A1 DE 3210742A1
Authority
DE
Germany
Prior art keywords
battery
manufacture
process
solar cell
cell battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823210742
Other languages
English (en)
Other versions
DE3210742C2 (de
Inventor
George Allan Swartz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US24972981A priority Critical
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE3210742A1 publication Critical patent/DE3210742A1/de
Application granted granted Critical
Publication of DE3210742C2 publication Critical patent/DE3210742C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
DE3210742A 1981-03-31 1982-03-24 Expired - Fee Related DE3210742C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US24972981A true 1981-03-31 1981-03-31

Publications (2)

Publication Number Publication Date
DE3210742A1 true DE3210742A1 (de) 1982-10-21
DE3210742C2 DE3210742C2 (de) 1991-05-08

Family

ID=22944738

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3210742A Expired - Fee Related DE3210742C2 (de) 1981-03-31 1982-03-24

Country Status (4)

Country Link
JP (1) JPH0467348B2 (de)
DE (1) DE3210742C2 (de)
FR (1) FR2503457B1 (de)
GB (1) GB2095908B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3545385A1 (de) * 1985-12-20 1987-06-25 Messerschmitt Boelkow Blohm Verfahren zur herstellung einer solarzellenanordnung
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
DE3714920C1 (de) * 1987-05-05 1988-07-14 Messerschmitt Boelkow Blohm Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0419713B2 (de) * 1982-11-24 1992-03-31 Handotai Energy Kenkyusho
JPS5994885A (en) * 1982-11-24 1984-05-31 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US4593152A (en) * 1982-11-24 1986-06-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
DE3382695T2 (de) * 1982-11-24 1993-09-23 Semiconductor Energy Lab Fotovoltaischer wandler.
JPS5996778A (en) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
JPS6331952B2 (de) * 1982-12-11 1988-06-27 Handotai Energy Kenkyusho
JPS6331951B2 (de) * 1982-12-14 1988-06-27 Handotai Energy Kenkyusho
JPH0449272B2 (de) * 1983-03-18 1992-08-11 Sanyo Electric Co
JPS59193075A (en) * 1983-04-18 1984-11-01 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion semiconductor device
JPH0758797B2 (ja) * 1983-04-18 1995-06-21 株式会社半導体エネルギー研究所 光電変換半導体装置の作製方法
JPS59201471A (en) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH0614556B2 (ja) * 1983-04-29 1994-02-23 株式会社半導体エネルギー研究所 光電変換装置及びその作製方法
US4724011A (en) * 1983-05-16 1988-02-09 Atlantic Richfield Company Solar cell interconnection by discrete conductive regions
US4517403A (en) * 1983-05-16 1985-05-14 Atlantic Richfield Company Series connected solar cells and method of formation
JPS607778A (en) * 1983-06-27 1985-01-16 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH0572112B2 (de) * 1983-07-04 1993-10-08 Handotai Energy Kenkyusho
JPH0518274B2 (de) * 1983-07-13 1993-03-11 Handotai Energy Kenkyusho
JPH0518273B2 (de) * 1983-07-13 1993-03-11 Handotai Energy Kenkyusho
JPH0514432B2 (de) * 1983-08-15 1993-02-25 Handotai Energy Kenkyusho
JPH0548633B2 (de) * 1983-09-12 1993-07-22 Sanyo Electric Co
JPH0558269B2 (de) * 1983-10-18 1993-08-26 Handotai Energy Kenkyusho
JPH0712031B2 (ja) * 1983-10-27 1995-02-08 株式会社半導体エネルギー研究所 透光性導電膜の加工方法
JPS6094781A (en) * 1983-10-27 1985-05-27 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH069251B2 (ja) * 1983-10-31 1994-02-02 株式会社半導体エネルギ−研究所 光電変換半導体装置作製方法
JPH0638512B2 (ja) * 1983-10-31 1994-05-18 株式会社半導体エネルギー研究所 光電変換半導体装置
JPH0713954B2 (ja) * 1983-11-07 1995-02-15 株式会社 半導体エネルギー研究所 液晶表示装置作製方法
JPH0712032B2 (ja) * 1983-11-07 1995-02-08 株式会社半導体エネルギー研究所 有機樹脂上被膜のレーザ加工方法
JPS60103623A (en) * 1983-11-10 1985-06-07 Semiconductor Energy Lab Co Ltd Laser processing method
JP2540501B2 (ja) * 1983-11-10 1996-10-02 株式会社 半導体エネルギー研究所 レ−ザ加工方法
JPS60110178A (en) * 1983-11-18 1985-06-15 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS60206077A (en) * 1984-03-29 1985-10-17 Taiyo Yuden Co Ltd Manufacture of amorphous semiconductor solar cell
JPS6191971A (en) * 1984-10-12 1986-05-10 Fuji Electric Co Ltd Manufacture of solar battery device
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JPS61241981A (en) * 1985-04-19 1986-10-28 Teijin Ltd Manufacture of thin film solar battery
JPH053752B2 (de) * 1986-02-20 1993-01-18 Sanyo Electric Co
JPS62295467A (en) * 1987-05-29 1987-12-22 Semiconductor Energy Lab Co Ltd Photoelectric convertor
JPH088369B2 (ja) * 1993-01-26 1996-01-29 株式会社半導体エネルギー研究所 光電変換半導体装置
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
JPH06314808A (ja) * 1993-06-21 1994-11-08 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
US20120111405A1 (en) * 2009-06-30 2012-05-10 Lg Innotek Co., Ltd. Solar cell apparatus and method of fabricating the same
KR101072106B1 (ko) * 2009-10-01 2011-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042418A (en) * 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same
JPS5363983A (en) * 1976-11-19 1978-06-07 Toshiba Corp Semiconductor device
US4191794A (en) * 1978-05-11 1980-03-04 Westinghouse Electric Corp. Integrated solar cell array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3545385A1 (de) * 1985-12-20 1987-06-25 Messerschmitt Boelkow Blohm Verfahren zur herstellung einer solarzellenanordnung
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
DE3714920C1 (de) * 1987-05-05 1988-07-14 Messerschmitt Boelkow Blohm Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung

Also Published As

Publication number Publication date
FR2503457B1 (fr) 1987-01-23
DE3210742C2 (de) 1991-05-08
GB2095908B (en) 1985-10-02
FR2503457A1 (fr) 1982-10-08
JPS57176778A (en) 1982-10-30
JPH0467348B2 (de) 1992-10-28
GB2095908A (en) 1982-10-06

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee