DE3202608A1 - Verfahren zur herstellung einer schottky-sperrschichtdiode und danach hergestellte sperrschichtdiode - Google Patents

Verfahren zur herstellung einer schottky-sperrschichtdiode und danach hergestellte sperrschichtdiode

Info

Publication number
DE3202608A1
DE3202608A1 DE19823202608 DE3202608A DE3202608A1 DE 3202608 A1 DE3202608 A1 DE 3202608A1 DE 19823202608 DE19823202608 DE 19823202608 DE 3202608 A DE3202608 A DE 3202608A DE 3202608 A1 DE3202608 A1 DE 3202608A1
Authority
DE
Germany
Prior art keywords
layer
opening
insulating layer
substrate
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823202608
Other languages
German (de)
English (en)
Other versions
DE3202608C2 (enExample
Inventor
Atsuhiko Menjo
Shinji Yokohama Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56012769A external-priority patent/JPS57128078A/ja
Priority claimed from JP56012742A external-priority patent/JPS57128076A/ja
Priority claimed from JP56012768A external-priority patent/JPS57128077A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE3202608A1 publication Critical patent/DE3202608A1/de
Application granted granted Critical
Publication of DE3202608C2 publication Critical patent/DE3202608C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE19823202608 1981-01-30 1982-01-27 Verfahren zur herstellung einer schottky-sperrschichtdiode und danach hergestellte sperrschichtdiode Granted DE3202608A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56012769A JPS57128078A (en) 1981-01-30 1981-01-30 Manufacture of schottky barrier diode
JP56012742A JPS57128076A (en) 1981-01-30 1981-01-30 Manufacture of schottky barrier diode
JP56012768A JPS57128077A (en) 1981-01-30 1981-01-30 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
DE3202608A1 true DE3202608A1 (de) 1982-08-12
DE3202608C2 DE3202608C2 (enExample) 1988-12-29

Family

ID=27279971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823202608 Granted DE3202608A1 (de) 1981-01-30 1982-01-27 Verfahren zur herstellung einer schottky-sperrschichtdiode und danach hergestellte sperrschichtdiode

Country Status (2)

Country Link
US (1) US4414737A (enExample)
DE (1) DE3202608A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0065133A3 (en) * 1981-05-13 1984-12-27 International Business Machines Corporation Schottky barrier diode with a guard ring and method of making same
EP0438700A1 (de) * 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
WO1999062124A1 (de) * 1998-05-26 1999-12-02 Siemens Aktiengesellschaft Verfahren zur herstellung von schottky-dioden
US6551911B1 (en) 1998-05-26 2003-04-22 Infineon Technologies Ag Method for producing Schottky diodes and Schottky diodes

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950567A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd 電界効果トランジスタの製造方法
US4589196A (en) * 1984-10-11 1986-05-20 Texas Instruments Incorporated Contacts for VLSI devices using direct-reacted silicide
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
JPS6362272A (ja) * 1986-09-02 1988-03-18 Seiko Instr & Electronics Ltd 半導体装置の製造方法
US4939154A (en) * 1987-03-25 1990-07-03 Seiko Instruments Inc. Method of fabricating an insulated gate semiconductor device having a self-aligned gate
JPH01151268A (ja) * 1987-12-08 1989-06-14 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0244413A (ja) * 1988-08-05 1990-02-14 Nec Corp 定電流供給回路
US5208471A (en) * 1989-06-12 1993-05-04 Hitachi, Ltd. Semiconductor device and manufacturing method therefor
US5196357A (en) * 1991-11-18 1993-03-23 Vlsi Technology, Inc. Method of making extended polysilicon self-aligned gate overlapped lightly doped drain structure for submicron transistor
US5270256A (en) * 1991-11-27 1993-12-14 Intel Corporation Method of forming a guard wall to reduce delamination effects
US5696025A (en) * 1996-02-02 1997-12-09 Micron Technology, Inc. Method of forming guard ringed schottky diode
US6750091B1 (en) 1996-03-01 2004-06-15 Micron Technology Diode formation method
DE19616605C2 (de) * 1996-04-25 1998-03-26 Siemens Ag Schottkydiodenanordnung und Verfahren zur Herstellung
US5859450A (en) * 1997-09-30 1999-01-12 Intel Corporation Dark current reducing guard ring
EP1090418B1 (de) * 1998-05-26 2008-07-09 Infineon Technologies AG Verfahren zur herstellung von schottky-dioden
DE10330838B4 (de) * 2003-07-08 2005-08-25 Infineon Technologies Ag Elektronisches Bauelement mit Schutzring
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US8435873B2 (en) * 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
US8008575B2 (en) * 2006-07-24 2011-08-30 Sunpower Corporation Solar cell with reduced base diffusion area
US8519478B2 (en) 2011-02-02 2013-08-27 International Business Machines Corporation Schottky barrier diode, a method of forming the diode and a design structure for the diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676230A (en) * 1971-02-16 1972-07-11 Trw Inc Method for fabricating semiconductor junctions
US3907617A (en) * 1971-10-22 1975-09-23 Motorola Inc Manufacture of a high voltage Schottky barrier device
DE2734072A1 (de) * 1976-08-03 1978-02-09 Lignes Telegraph Telephon Verfahren zur herstellung von schottky-dioden mit gold-silicium- sperrschicht

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932028B1 (enExample) * 1969-06-24 1974-08-27
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
JPS4859781A (enExample) * 1971-11-25 1973-08-22
US3820235A (en) * 1973-05-21 1974-06-28 Philco Ford Corp Guard ring structure for microwave schottky diode
US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
US4261095A (en) * 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
US4358891A (en) * 1979-06-22 1982-11-16 Burroughs Corporation Method of forming a metal semiconductor field effect transistor
US4356040A (en) * 1980-05-02 1982-10-26 Texas Instruments Incorporated Semiconductor device having improved interlevel conductor insulation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676230A (en) * 1971-02-16 1972-07-11 Trw Inc Method for fabricating semiconductor junctions
US3907617A (en) * 1971-10-22 1975-09-23 Motorola Inc Manufacture of a high voltage Schottky barrier device
DE2734072A1 (de) * 1976-08-03 1978-02-09 Lignes Telegraph Telephon Verfahren zur herstellung von schottky-dioden mit gold-silicium- sperrschicht

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0065133A3 (en) * 1981-05-13 1984-12-27 International Business Machines Corporation Schottky barrier diode with a guard ring and method of making same
EP0438700A1 (de) * 1990-01-25 1991-07-31 Asea Brown Boveri Ag Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement sowie Verfahren zu dessen Herstellung
WO1999062124A1 (de) * 1998-05-26 1999-12-02 Siemens Aktiengesellschaft Verfahren zur herstellung von schottky-dioden
US6551911B1 (en) 1998-05-26 2003-04-22 Infineon Technologies Ag Method for producing Schottky diodes and Schottky diodes

Also Published As

Publication number Publication date
US4414737A (en) 1983-11-15
DE3202608C2 (enExample) 1988-12-29

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee