JPS57128076A - Manufacture of schottky barrier diode - Google Patents

Manufacture of schottky barrier diode

Info

Publication number
JPS57128076A
JPS57128076A JP1274281A JP1274281A JPS57128076A JP S57128076 A JPS57128076 A JP S57128076A JP 1274281 A JP1274281 A JP 1274281A JP 1274281 A JP1274281 A JP 1274281A JP S57128076 A JPS57128076 A JP S57128076A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
aperture
schottky barrier
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1274281A
Inventor
Atsuhiko Menju
Shinji Saito
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/872Schottky diodes

Abstract

PURPOSE:To contrive the improvement of integration as well as to simplify the manufacture of the subject Schottky barrier diode by a method wherein a guard ring section is formed by preforming a self-slignment for a Schottky barrier section. CONSTITUTION:A thermal oxidizing treatment is performed on an N type silicon substrate 11, a thermal oxide film 12 is formed on the surface of the substrate 11, and a silicon nitride film 13 having a selective etching property is formed on the film 12. Then, an aperture 14 is formed by performing a selective etching on the film 13, and then using the film 13 as an mask, a aperture 16 is formed by overetching the film 12 utilizing an overhang 15. Besides, a boron-added crystal silicon film 17 having the second conductive impurities is deposited on the film 13 including the aperture 16, and then an etching is perormed on the film 17 in such a manner that the film 17 will remain at the lower part of the overhang 15. Subsequently, boron is deffused on the substrate 11 from the film 17', and after a P<+> type guard ring section 18 has been formed for the aperture section 16 by performing a self-alignment, a silicide layer 19 is formed on the remaining surface of the film 17' by performing heat treatment, and the an Al wiring 20 is formed.
JP1274281A 1981-01-30 1981-01-30 Manufacture of schottky barrier diode Granted JPS57128076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1274281A JPS57128076A (en) 1981-01-30 1981-01-30 Manufacture of schottky barrier diode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1274281A JPS57128076A (en) 1981-01-30 1981-01-30 Manufacture of schottky barrier diode
US06341588 US4414737A (en) 1981-01-30 1982-01-21 Production of Schottky barrier diode
DE19823202608 DE3202608C2 (en) 1981-01-30 1982-01-27

Publications (1)

Publication Number Publication Date
JPS57128076A true true JPS57128076A (en) 1982-08-09

Family

ID=11813871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1274281A Granted JPS57128076A (en) 1981-01-30 1981-01-30 Manufacture of schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS57128076A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696025A (en) * 1996-02-02 1997-12-09 Micron Technology, Inc. Method of forming guard ringed schottky diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696025A (en) * 1996-02-02 1997-12-09 Micron Technology, Inc. Method of forming guard ringed schottky diode

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