DE3138362C2 - - Google Patents
Info
- Publication number
- DE3138362C2 DE3138362C2 DE3138362A DE3138362A DE3138362C2 DE 3138362 C2 DE3138362 C2 DE 3138362C2 DE 3138362 A DE3138362 A DE 3138362A DE 3138362 A DE3138362 A DE 3138362A DE 3138362 C2 DE3138362 C2 DE 3138362C2
- Authority
- DE
- Germany
- Prior art keywords
- photoresist layer
- mesa
- layer
- mountains
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004922 lacquer Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 2
- 239000003973 paint Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813138362 DE3138362A1 (de) | 1981-09-26 | 1981-09-26 | Verfahren zum aufbringen von metallkontakten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813138362 DE3138362A1 (de) | 1981-09-26 | 1981-09-26 | Verfahren zum aufbringen von metallkontakten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3138362A1 DE3138362A1 (de) | 1983-04-14 |
| DE3138362C2 true DE3138362C2 (enrdf_load_html_response) | 1987-06-04 |
Family
ID=6142688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813138362 Granted DE3138362A1 (de) | 1981-09-26 | 1981-09-26 | Verfahren zum aufbringen von metallkontakten |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3138362A1 (enrdf_load_html_response) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3828379A1 (de) * | 1988-08-20 | 1990-03-01 | Licentia Gmbh | Verfahren zum herstellen kleiner oeffnungen in duennen schichten |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB985280A (en) * | 1961-10-03 | 1965-03-03 | Hughes Aircraft Co | Method of forming a metallic electrical contact to a preselected area of a semiconductor surface |
| DE1514800A1 (de) * | 1965-03-12 | 1969-06-26 | Telefunken Patent | Verfahren zum Kontaktieren von Halbleiteranordnungen |
| FR2337424A1 (fr) * | 1975-12-31 | 1977-07-29 | Thomson Csf | Procede de fabrication d'un bloc semi-conducteur comportant une ou plusieurs paires de diodes " tete-beche ", et son application a des dispositifs hyperfrequence |
-
1981
- 1981-09-26 DE DE19813138362 patent/DE3138362A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3138362A1 (de) | 1983-04-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: TELEFUNKEN ELECTRONIC GMBH, 7100 HEILBRONN, DE |
|
| 8120 | Willingness to grant licences paragraph 23 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TEMIC TELEFUNKEN MICROELECTRONIC GMBH, 74072 HEILB |
|
| 8339 | Ceased/non-payment of the annual fee |