DE3122382A1 - Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur - Google Patents

Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur

Info

Publication number
DE3122382A1
DE3122382A1 DE19813122382 DE3122382A DE3122382A1 DE 3122382 A1 DE3122382 A1 DE 3122382A1 DE 19813122382 DE19813122382 DE 19813122382 DE 3122382 A DE3122382 A DE 3122382A DE 3122382 A1 DE3122382 A1 DE 3122382A1
Authority
DE
Germany
Prior art keywords
layer
aluminum
sio
field effect
gate insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19813122382
Other languages
German (de)
English (en)
Inventor
Werner Goessler
Anneliese Strube
Manfred Dipl Phys Zurheide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Priority to DE19813122382 priority Critical patent/DE3122382A1/de
Priority to DE8282104239T priority patent/DE3278524D1/de
Priority to EP82104239A priority patent/EP0066730B1/de
Priority to JP57084096A priority patent/JPS57204173A/ja
Priority to US06/384,855 priority patent/US4566173A/en
Publication of DE3122382A1 publication Critical patent/DE3122382A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H10D64/01344—
    • H10D64/0135—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H10P14/46—
    • H10P14/6314—
    • H10D64/01346—
    • H10P14/69215—
    • H10P14/69391—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
DE19813122382 1981-06-05 1981-06-05 Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur Withdrawn DE3122382A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19813122382 DE3122382A1 (de) 1981-06-05 1981-06-05 Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur
DE8282104239T DE3278524D1 (en) 1981-06-05 1982-05-14 An isolating layered structure for a gate, process for manufacturing and use of that structure
EP82104239A EP0066730B1 (de) 1981-06-05 1982-05-14 Gateisolations-Schichtstruktur, Verfahren zu ihrer Herstellung und ihre Verwendung
JP57084096A JPS57204173A (en) 1981-06-05 1982-05-20 Method of forming gate insulator
US06/384,855 US4566173A (en) 1981-06-05 1982-06-04 Gate insulation layer and method of producing such a structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813122382 DE3122382A1 (de) 1981-06-05 1981-06-05 Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur

Publications (1)

Publication Number Publication Date
DE3122382A1 true DE3122382A1 (de) 1982-12-23

Family

ID=6134019

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19813122382 Withdrawn DE3122382A1 (de) 1981-06-05 1981-06-05 Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur
DE8282104239T Expired DE3278524D1 (en) 1981-06-05 1982-05-14 An isolating layered structure for a gate, process for manufacturing and use of that structure

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8282104239T Expired DE3278524D1 (en) 1981-06-05 1982-05-14 An isolating layered structure for a gate, process for manufacturing and use of that structure

Country Status (4)

Country Link
US (1) US4566173A (cg-RX-API-DMAC10.html)
EP (1) EP0066730B1 (cg-RX-API-DMAC10.html)
JP (1) JPS57204173A (cg-RX-API-DMAC10.html)
DE (2) DE3122382A1 (cg-RX-API-DMAC10.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804640A (en) * 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
DE3628399A1 (de) * 1985-08-27 1987-03-05 Rca Corp Verfahren zum herstellen eines dielektrischen films auf einem halbleiterkoerper und danach hergestelltes halbleiterbauelement
JPH036929U (cg-RX-API-DMAC10.html) * 1989-06-07 1991-01-23
KR940009352B1 (ko) * 1990-07-09 1994-10-07 가부시끼가이샤 도시바 반도체 소자
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
US5407850A (en) * 1993-06-29 1995-04-18 Digital Equipment Corporation SOI transistor threshold optimization by use of gate oxide having positive charge
US6136728A (en) * 1996-01-05 2000-10-24 Yale University Water vapor annealing process
JP3250465B2 (ja) * 1996-09-06 2002-01-28 ヤマハ株式会社 電子シェーディングダメージの測定方法
US6245606B1 (en) * 1998-11-17 2001-06-12 Texas Instruments Incorporated Low temperature method for forming a thin, uniform layer of aluminum oxide
US6391724B1 (en) * 1999-12-24 2002-05-21 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric
KR100358056B1 (ko) * 1999-12-27 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 게이트 산화막 형성방법
TW578214B (en) * 2000-05-29 2004-03-01 Tokyo Electron Ltd Method of forming oxynitride film or the like and system for carrying out the same
US6858865B2 (en) * 2001-02-23 2005-02-22 Micron Technology, Inc. Doped aluminum oxide dielectrics
US6743681B2 (en) * 2001-11-09 2004-06-01 Micron Technology, Inc. Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride
CA2525205C (en) * 2004-11-08 2013-06-25 Ecolab Inc. Foam cleaning and brightening composition, and methods
JP2007152927A (ja) * 2005-06-29 2007-06-21 Kokuyo Co Ltd ファイル、綴じ具、及び作動制限部材
US7879739B2 (en) * 2006-05-09 2011-02-01 Intel Corporation Thin transition layer between a group III-V substrate and a high-k gate dielectric layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2722491A (en) * 1951-11-06 1955-11-01 Raytheon Mfg Co Insulating coating
BE557165A (cg-RX-API-DMAC10.html) * 1956-05-02
NL281503A (cg-RX-API-DMAC10.html) * 1961-08-04
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
JPS4813268B1 (cg-RX-API-DMAC10.html) * 1968-10-09 1973-04-26
JPS4914390B1 (cg-RX-API-DMAC10.html) * 1969-10-29 1974-04-06
JPS5137151B2 (cg-RX-API-DMAC10.html) * 1971-09-08 1976-10-14
US4025669A (en) * 1973-11-15 1977-05-24 Owens-Illinois, Inc. Multiple pass method of applying printing paste upon a substrate
US3978577A (en) * 1975-06-30 1976-09-07 International Business Machines Corporation Fixed and variable threshold N-channel MNOSFET integration technique
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
US4151537A (en) * 1976-03-10 1979-04-24 Gte Laboratories Incorporated Gate electrode for MNOS semiconductor memory device
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture
US4244986A (en) * 1979-04-24 1981-01-13 Westinghouse Electric Corp. Method of forming sodium beta-Al2 O3 films and coatings
CA1164944A (en) * 1980-01-02 1984-04-03 International Gas Detectors Limited Gas sensor elements and methods of manufacturing them

Also Published As

Publication number Publication date
US4566173A (en) 1986-01-28
JPS57204173A (en) 1982-12-14
EP0066730A2 (de) 1982-12-15
EP0066730B1 (de) 1988-05-18
DE3278524D1 (en) 1988-06-23
EP0066730A3 (en) 1983-08-03
JPS626350B2 (cg-RX-API-DMAC10.html) 1987-02-10

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination