DE3108491C2 - - Google Patents

Info

Publication number
DE3108491C2
DE3108491C2 DE3108491A DE3108491A DE3108491C2 DE 3108491 C2 DE3108491 C2 DE 3108491C2 DE 3108491 A DE3108491 A DE 3108491A DE 3108491 A DE3108491 A DE 3108491A DE 3108491 C2 DE3108491 C2 DE 3108491C2
Authority
DE
Germany
Prior art keywords
zone
collector
base
emitter
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3108491A
Other languages
German (de)
English (en)
Other versions
DE3108491A1 (de
Inventor
Yoshihito Tokio/Tokyo Jp Amemiya
Tsuneo Saitama Jp Urisu
Yoshihiko Tokio/Tokyo Jp Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3108491A1 publication Critical patent/DE3108491A1/de
Application granted granted Critical
Publication of DE3108491C2 publication Critical patent/DE3108491C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/861—Vertical heterojunction BJTs having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE3108491A 1980-03-10 1981-03-06 Bipolarer transistor Granted DE3108491A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55030096A JPS5946103B2 (ja) 1980-03-10 1980-03-10 トランジスタ

Publications (2)

Publication Number Publication Date
DE3108491A1 DE3108491A1 (de) 1982-04-01
DE3108491C2 true DE3108491C2 (en:Method) 1990-03-22

Family

ID=12294243

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3108491A Granted DE3108491A1 (de) 1980-03-10 1981-03-06 Bipolarer transistor

Country Status (7)

Country Link
US (1) US4414557A (en:Method)
JP (1) JPS5946103B2 (en:Method)
CA (1) CA1157573A (en:Method)
DE (1) DE3108491A1 (en:Method)
FR (1) FR2477777B1 (en:Method)
GB (1) GB2073486B (en:Method)
NL (1) NL189272C (en:Method)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
JPS59227161A (ja) * 1983-05-25 1984-12-20 アメリカン・テレフォン・アンド・テレグラフ・カムパニー バイポ−ラトランジスタ
US4794440A (en) * 1983-05-25 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Heterojunction bipolar transistor
JPS60110159A (ja) * 1983-11-21 1985-06-15 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
JPH0750714B2 (ja) * 1984-01-30 1995-05-31 日本電気株式会社 バイポーラトランジスタ
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
GB2191036A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
SE8704121D0 (sv) * 1987-10-23 1987-10-23 Linkopings Silicon Constructio Transistor
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
JP3150376B2 (ja) * 1991-09-30 2001-03-26 ローム株式会社 ヘテロ接合バイポーラトランジスタの製法
US5285083A (en) * 1992-04-27 1994-02-08 The University Of British Columbia Inverted heterojunction bipolar device having undoped amorphous silicon layer
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
US5766262A (en) * 1996-03-29 1998-06-16 Mikhail; W. E. Michael Femoral prosthesis with spacer
US6228092B1 (en) 1999-07-29 2001-05-08 W. E. Michael Mikhail System for performing hip prosthesis surgery
US6407617B1 (en) * 1999-11-19 2002-06-18 Matsushita Electric Industrial Co., Ltd. Bias circuit and method of fabricating semiconductor device
US7005702B1 (en) * 2000-05-05 2006-02-28 International Rectifier Corporation IGBT with amorphous silicon transparent collector
CN107516670B (zh) * 2017-08-17 2019-12-10 电子科技大学 一种具有高电流上升率的栅控晶闸管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
JPS5147583B2 (en:Method) * 1972-12-29 1976-12-15
JPS50128697A (en:Method) * 1974-03-30 1975-10-09
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2352404A1 (fr) * 1976-05-20 1977-12-16 Comp Generale Electricite Transistor a heterojonction
JPS5368985A (en) * 1976-12-02 1978-06-19 Toshiba Corp Junction type field effect transistor
US4173763A (en) * 1977-06-09 1979-11-06 International Business Machines Corporation Heterojunction tunneling base transistor
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device

Also Published As

Publication number Publication date
FR2477777A1 (fr) 1981-09-11
DE3108491A1 (de) 1982-04-01
CA1157573A (en) 1983-11-22
NL189272C (nl) 1993-02-16
GB2073486A (en) 1981-10-14
US4414557A (en) 1983-11-08
NL8101107A (nl) 1981-10-01
GB2073486B (en) 1984-12-19
FR2477777B1 (fr) 1985-09-20
JPS56125871A (en) 1981-10-02
JPS5946103B2 (ja) 1984-11-10
NL189272B (nl) 1992-09-16

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO,

8128 New person/name/address of the agent

Representative=s name: WENZEL, H., DIPL.-ING., 2000 HAMBURG KALKOFF, H.,

D2 Grant after examination
8364 No opposition during term of opposition