DE2742361C2 - - Google Patents

Info

Publication number
DE2742361C2
DE2742361C2 DE2742361A DE2742361A DE2742361C2 DE 2742361 C2 DE2742361 C2 DE 2742361C2 DE 2742361 A DE2742361 A DE 2742361A DE 2742361 A DE2742361 A DE 2742361A DE 2742361 C2 DE2742361 C2 DE 2742361C2
Authority
DE
Germany
Prior art keywords
zone
transistor
transistors
collector
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2742361A
Other languages
German (de)
English (en)
Other versions
DE2742361A1 (de
Inventor
Gerard Orsay Fr Nuzillat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE2742361A1 publication Critical patent/DE2742361A1/de
Application granted granted Critical
Publication of DE2742361C2 publication Critical patent/DE2742361C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19772742361 1976-09-21 1977-09-20 Bipolarer lateraler transistor Granted DE2742361A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7628318A FR2365213A1 (fr) 1976-09-21 1976-09-21 Transistor bipolaire lateral et circuits utilisant ce transistor

Publications (2)

Publication Number Publication Date
DE2742361A1 DE2742361A1 (de) 1978-03-23
DE2742361C2 true DE2742361C2 (en:Method) 1989-03-09

Family

ID=9177896

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772742361 Granted DE2742361A1 (de) 1976-09-21 1977-09-20 Bipolarer lateraler transistor

Country Status (4)

Country Link
JP (1) JPS6028395B2 (en:Method)
DE (1) DE2742361A1 (en:Method)
FR (1) FR2365213A1 (en:Method)
GB (1) GB1593063A (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105209A (en:Method) * 1974-01-25 1975-08-19
DE2835930C2 (de) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor
JPS6165762U (en:Method) * 1984-10-03 1986-05-06
FR2592525B1 (fr) * 1985-12-31 1988-02-12 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant
EP0782197B1 (en) * 1995-12-29 2001-06-06 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated electronic device with reduced parasitic currents, and corresponding method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same

Also Published As

Publication number Publication date
JPS5339082A (en) 1978-04-10
DE2742361A1 (de) 1978-03-23
FR2365213B1 (en:Method) 1979-01-12
FR2365213A1 (fr) 1978-04-14
JPS6028395B2 (ja) 1985-07-04
GB1593063A (en) 1981-07-15

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING., PAT.

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee