DE3071120D1 - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- DE3071120D1 DE3071120D1 DE8080901149T DE3071120T DE3071120D1 DE 3071120 D1 DE3071120 D1 DE 3071120D1 DE 8080901149 T DE8080901149 T DE 8080901149T DE 3071120 T DE3071120 T DE 3071120T DE 3071120 D1 DE3071120 D1 DE 3071120D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- pct
- decoders
- cell array
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/844—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by splitting the decoders in stages
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7981979A JPS563499A (en) | 1979-06-25 | 1979-06-25 | Semiconductor memory device |
PCT/JP1980/000143 WO1981000027A1 (en) | 1979-06-25 | 1980-06-24 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3071120D1 true DE3071120D1 (en) | 1985-10-31 |
Family
ID=13700805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080901149T Expired DE3071120D1 (en) | 1979-06-25 | 1980-06-24 | Semiconductor memory device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4392211A (de) |
EP (1) | EP0031386B1 (de) |
JP (1) | JPS563499A (de) |
DE (1) | DE3071120D1 (de) |
WO (1) | WO1981000027A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4460999A (en) * | 1981-07-15 | 1984-07-17 | Pacific Western Systems, Inc. | Memory tester having memory repair analysis under pattern generator control |
JPS58164099A (ja) * | 1982-03-25 | 1983-09-28 | Toshiba Corp | 半導体メモリ− |
JPS58208998A (ja) * | 1982-05-28 | 1983-12-05 | Toshiba Corp | 半導体cmosメモリ |
DE3232215A1 (de) * | 1982-08-30 | 1984-03-01 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte digitale halbleiterschaltung |
US4633429A (en) * | 1982-12-27 | 1986-12-30 | Motorola, Inc. | Partial memory selection using a programmable decoder |
JPH0670880B2 (ja) * | 1983-01-21 | 1994-09-07 | 株式会社日立マイコンシステム | 半導体記憶装置 |
JPH0666394B2 (ja) * | 1983-12-16 | 1994-08-24 | 富士通株式会社 | 半導体記憶装置 |
JPS62134899A (ja) * | 1985-12-06 | 1987-06-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS62153700U (de) * | 1986-03-20 | 1987-09-29 | ||
JPS62293598A (ja) * | 1986-06-12 | 1987-12-21 | Toshiba Corp | 半導体記憶装置 |
JPS6337899A (ja) * | 1986-07-30 | 1988-02-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS63168900A (ja) * | 1987-01-06 | 1988-07-12 | Toshiba Corp | 半導体記憶装置 |
JPH01245497A (ja) * | 1988-03-28 | 1989-09-29 | Nec Corp | 半導体メモリ |
US5022006A (en) * | 1988-04-01 | 1991-06-04 | International Business Machines Corporation | Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells |
US5031151A (en) * | 1988-04-01 | 1991-07-09 | International Business Machines Corporation | Wordline drive inhibit circuit implementing worldline redundancy without an access time penalty |
US5426607A (en) * | 1988-04-27 | 1995-06-20 | Sharp Kabushiki Kaisha | Redundant circuit for memory having redundant block operatively connected to special one of normal blocks |
EP0383452B1 (de) * | 1989-01-31 | 1996-12-11 | Fujitsu Limited | Halbleiterspeicher mit einer Einrichtung zum Ersetzen defekter Speicherzellen |
WO1990012401A1 (en) * | 1989-04-13 | 1990-10-18 | Dallas Semiconductor Corporation | Memory with power supply intercept and redundancy logic |
KR940008208B1 (ko) * | 1990-12-22 | 1994-09-08 | 삼성전자주식회사 | 반도체 메모리장치의 리던던트 장치 및 방법 |
EP0499131A1 (de) * | 1991-02-12 | 1992-08-19 | Texas Instruments Incorporated | Hochleistungsfähige Reihenredundanz für einen dynamischen Speicher |
US5610631A (en) * | 1992-07-09 | 1997-03-11 | Thrustmaster, Inc. | Reconfigurable joystick controller recalibration |
US5551701A (en) * | 1992-08-19 | 1996-09-03 | Thrustmaster, Inc. | Reconfigurable video game controller with graphical reconfiguration display |
US5839517A (en) * | 1993-01-27 | 1998-11-24 | Lord Corporation | Vibration isolator for hand-held vibrating devices |
JP2710237B2 (ja) * | 1995-09-18 | 1998-02-10 | 日本電気株式会社 | 半導体記憶装置およびその冗長メモリセル部の置換方法 |
US5732030A (en) * | 1996-06-25 | 1998-03-24 | Texas Instruments Incorporated | Method and system for reduced column redundancy using a dual column select |
JP2000285694A (ja) | 1999-03-30 | 2000-10-13 | Mitsubishi Electric Corp | 半導体記憶装置および半導体記憶装置を搭載する半導体集積回路装置 |
US20030058698A1 (en) * | 2001-09-26 | 2003-03-27 | Gerhard Mueller | Memory with high performance unit architecture |
US7509543B2 (en) * | 2003-06-17 | 2009-03-24 | Micron Technology, Inc. | Circuit and method for error test, recordation, and repair |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3753244A (en) * | 1971-08-18 | 1973-08-14 | Ibm | Yield enhancement redundancy technique |
US4047163A (en) * | 1975-07-03 | 1977-09-06 | Texas Instruments Incorporated | Fault-tolerant cell addressable array |
JPS5261933A (en) * | 1975-11-18 | 1977-05-21 | Nec Corp | Memory unit |
JPS5928560Y2 (ja) * | 1979-11-13 | 1984-08-17 | 富士通株式会社 | 冗長ビットを有する記憶装置 |
-
1979
- 1979-06-25 JP JP7981979A patent/JPS563499A/ja active Granted
-
1980
- 1980-06-24 EP EP80901149A patent/EP0031386B1/de not_active Expired
- 1980-06-24 US US06/243,927 patent/US4392211A/en not_active Expired - Lifetime
- 1980-06-24 DE DE8080901149T patent/DE3071120D1/de not_active Expired
- 1980-06-24 WO PCT/JP1980/000143 patent/WO1981000027A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO1981000027A1 (en) | 1981-01-08 |
US4392211A (en) | 1983-07-05 |
EP0031386A4 (de) | 1981-11-25 |
EP0031386B1 (de) | 1985-09-25 |
EP0031386A1 (de) | 1981-07-08 |
JPS6329360B2 (de) | 1988-06-13 |
JPS563499A (en) | 1981-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3071120D1 (en) | Semiconductor memory device | |
EP0028916A3 (de) | Halbleiter-Speichervorrichtung | |
DE3068717D1 (en) | Semiconductor memory device with redundancy | |
JPS5694769A (en) | Integrated circuit memory array | |
JPS52155037A (en) | Polarized wave mode switching circuit | |
GB2209858B (en) | Semiconductor memory device with redundant memory cells | |
IE840263L (en) | Integrated semiconductor circuit device for generating a¹switching control signal | |
DE3568911D1 (en) | A semiconductor memory device comprising a matrix of six-transistor memory cells with a pair of cmos inverters | |
DE3485188D1 (de) | Statisches halbleiterspeichergeraet mit eingebauten redundanzspeicherzellen. | |
JPS52142442A (en) | Memory circuit | |
EP0098079A3 (en) | Semiconductor memory device with redundancy decoder circuit | |
JPS5314525A (en) | Memory circuit | |
JPS544534A (en) | Memory element | |
JPS5378131A (en) | Semiconductor memory element | |
JPS5616991A (en) | Semicondcutor memory unit | |
JPS53121589A (en) | Semiconductor logic circuit device | |
JPS5384633A (en) | Memory system having redundancy memory cell | |
JPS52107733A (en) | Memory unit | |
DE3065534D1 (en) | Semiconductor memory device with multi-emitter transistor cells | |
JPS5383439A (en) | Semiconductor memory unit | |
JPS5278327A (en) | Semiconductor memory | |
JPS5371530A (en) | Input circuit | |
JPS57150198A (en) | Semiconductor storage device | |
JPS5512567A (en) | Memory protection circuit | |
JPS5428577A (en) | Semiconductor nonvolatile memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |