JPS5383439A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5383439A
JPS5383439A JP15864876A JP15864876A JPS5383439A JP S5383439 A JPS5383439 A JP S5383439A JP 15864876 A JP15864876 A JP 15864876A JP 15864876 A JP15864876 A JP 15864876A JP S5383439 A JPS5383439 A JP S5383439A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
word line
oroviding
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15864876A
Other languages
Japanese (ja)
Other versions
JPS566072B2 (en
Inventor
Junichi Mogi
Kiyoshi Miyasaka
Takeo Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15864876A priority Critical patent/JPS5383439A/en
Publication of JPS5383439A publication Critical patent/JPS5383439A/en
Publication of JPS566072B2 publication Critical patent/JPS566072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To shorten the access time of a semiconductor memory unit by oroviding a memory cell composed of MOSFET and capacitor at the cross-point between plural pieces of the word line and the bit line crossing vertically to the word line.
JP15864876A 1976-12-28 1976-12-28 Semiconductor memory unit Granted JPS5383439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15864876A JPS5383439A (en) 1976-12-28 1976-12-28 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15864876A JPS5383439A (en) 1976-12-28 1976-12-28 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5383439A true JPS5383439A (en) 1978-07-22
JPS566072B2 JPS566072B2 (en) 1981-02-09

Family

ID=15676291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15864876A Granted JPS5383439A (en) 1976-12-28 1976-12-28 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5383439A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792485A (en) * 1980-11-28 1982-06-09 Mitsubishi Electric Corp Memory
JPS6224495A (en) * 1985-07-23 1987-02-02 Nec Corp Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792485A (en) * 1980-11-28 1982-06-09 Mitsubishi Electric Corp Memory
JPS6220633B2 (en) * 1980-11-28 1987-05-08 Mitsubishi Electric Corp
JPS6224495A (en) * 1985-07-23 1987-02-02 Nec Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS566072B2 (en) 1981-02-09

Similar Documents

Publication Publication Date Title
JPS52106280A (en) Semiconductor transistor memory cell
DE3483134D1 (en) DYNAMIC SEMICONDUCTOR MEMORY ARRANGEMENT WITH DIVIDED MEMORY CELL BLOCKS.
DE3176699D1 (en) NON-VOLATILE SEMICONDUCTOR MEMORY CELL
DE3170944D1 (en) NON-VOLATILE DYNAMIC RANDOM ACCESS MEMORY CELL
JPS5252337A (en) Semiconductor memory cell
SE7602808L (en) MEMORY CELL
JPS5383439A (en) Semiconductor memory unit
JPS5335337A (en) Tetrode transistor memory logic cell
JPS5332634A (en) Memory
JPS51122383A (en) Semiconductor memory
JPS5375786A (en) Semiconductor device
JPS5292441A (en) Semiconductor memory unit
JPS56137580A (en) Semiconductor storage device
JPS5382140A (en) Word bit rearraying circuit
JPS5271139A (en) Semiconductor memory
JPS5378131A (en) Semiconductor memory element
JPS52147029A (en) Mosfet static memory cell
JPS52111342A (en) Semiconductor memory device
JPS52142980A (en) Non-volatile semiconductor memory
JPS5374846A (en) Memory control circuit
JPS524746A (en) Semiconductor memory device
JPS5431238A (en) Semiconductor memory device
JPS57105892A (en) Rewritable non-volatile semiconductor storage device
JPS53108740A (en) Memory circuit
JPS5357779A (en) Semiconductor memory device