JPS5431238A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5431238A JPS5431238A JP9761077A JP9761077A JPS5431238A JP S5431238 A JPS5431238 A JP S5431238A JP 9761077 A JP9761077 A JP 9761077A JP 9761077 A JP9761077 A JP 9761077A JP S5431238 A JPS5431238 A JP S5431238A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- shorten
- decreasing
- reduce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce the area of the storage capacitor and thus to shorten the delay time of the signal by decreasing the parasitic capacity for the bit wire of the semiconductor memory device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52097610A JPS5950103B2 (en) | 1977-08-15 | 1977-08-15 | semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52097610A JPS5950103B2 (en) | 1977-08-15 | 1977-08-15 | semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5431238A true JPS5431238A (en) | 1979-03-08 |
JPS5950103B2 JPS5950103B2 (en) | 1984-12-06 |
Family
ID=14196977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52097610A Expired JPS5950103B2 (en) | 1977-08-15 | 1977-08-15 | semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5950103B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0055114A2 (en) * | 1980-12-24 | 1982-06-30 | Hitachi, Ltd. | Solid-state imaging device |
JPS62298159A (en) * | 1986-06-17 | 1987-12-25 | Nec Corp | Semiconductor memory |
-
1977
- 1977-08-15 JP JP52097610A patent/JPS5950103B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0055114A2 (en) * | 1980-12-24 | 1982-06-30 | Hitachi, Ltd. | Solid-state imaging device |
JPS62298159A (en) * | 1986-06-17 | 1987-12-25 | Nec Corp | Semiconductor memory |
Also Published As
Publication number | Publication date |
---|---|
JPS5950103B2 (en) | 1984-12-06 |
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