DE3070830D1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
DE3070830D1
DE3070830D1 DE8080104250T DE3070830T DE3070830D1 DE 3070830 D1 DE3070830 D1 DE 3070830D1 DE 8080104250 T DE8080104250 T DE 8080104250T DE 3070830 T DE3070830 T DE 3070830T DE 3070830 D1 DE3070830 D1 DE 3070830D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080104250T
Other languages
German (de)
Inventor
Kiyofumi Ochii
Masami Masuda
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3070830D1 publication Critical patent/DE3070830D1/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
DE8080104250T 1979-07-26 1980-07-18 Semiconductor memory device Expired DE3070830D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9552679A JPS5619585A (en) 1979-07-26 1979-07-26 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
DE3070830D1 true DE3070830D1 (en) 1985-08-08

Family

ID=14139989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080104250T Expired DE3070830D1 (en) 1979-07-26 1980-07-18 Semiconductor memory device

Country Status (4)

Country Link
US (2) US4379346A (en)
EP (1) EP0023655B1 (en)
JP (1) JPS5619585A (en)
DE (1) DE3070830D1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819794A (en) * 1981-07-29 1983-02-04 Fujitsu Ltd Semiconductor memory
JPS58169958A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Mis static random access memory
JPS61178795A (en) * 1985-02-01 1986-08-11 Toshiba Corp Dynamic type semiconductor memory device
JPS62149097A (en) * 1986-12-12 1987-07-03 Mitsubishi Electric Corp Semiconductor memory device
US5580438A (en) * 1989-08-18 1996-12-03 Silveri; Michael A. Pool purifier attaching apparatus and method
USRE37055E1 (en) 1989-08-18 2001-02-20 Michael A. Silveri Pool purifier attaching apparatus and method
US5759384A (en) 1995-03-30 1998-06-02 Bioquest Spa halogen generator and method of operating
US5545310A (en) 1995-03-30 1996-08-13 Silveri; Michael A. Method of inhibiting scale formation in spa halogen generator
US5676805A (en) 1995-03-30 1997-10-14 Bioquest SPA purification system
US6007693A (en) 1995-03-30 1999-12-28 Bioquest Spa halogen generator and method of operating
US5752282A (en) 1995-03-30 1998-05-19 Bioquest Spa fitting
US6252843B1 (en) 1999-04-09 2001-06-26 Hewlett Packard Company Automatic clamping of compact discs
DE10050770A1 (en) * 2000-10-13 2002-05-02 Infineon Technologies Ag Circuit for controlling memory matrix word lines makes and maintains low impedance connection from detection of sensed potential changing towards second potential to defined extent
US9105315B2 (en) 2012-07-23 2015-08-11 Arm Limited Controlling the voltage level on the word line to maintain performance and reduce access disturbs
GB2520277B (en) * 2013-11-13 2016-07-20 Advanced Risc Mach Ltd Controlling the voltage level on the word line to maintain performance and reduce access disturbs

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US955006A (en) * 1909-01-27 1910-04-12 Joseph Everett Sparks Abdominal retractor.
US3644905A (en) * 1969-11-12 1972-02-22 Gen Instrument Corp Single device storage cell for read-write memory utilizing complementary field-effect transistors
US3657568A (en) * 1970-01-05 1972-04-18 Hamilton Watch Co Pulse shaping circuit using complementary mos devices
US3810124A (en) * 1972-06-30 1974-05-07 Ibm Memory accessing system
US3989955A (en) * 1972-09-30 1976-11-02 Tokyo Shibaura Electric Co., Ltd. Logic circuit arrangements using insulated-gate field effect transistors
US3845328A (en) * 1972-10-09 1974-10-29 Rca Corp Tri-state logic circuit
JPS5178665A (en) * 1974-12-24 1976-07-08 Ibm
US4069475A (en) * 1976-04-15 1978-01-17 National Semiconductor Corporation MOS Dynamic random access memory having an improved sense and restore circuit
US4080539A (en) * 1976-11-10 1978-03-21 Rca Corporation Level shift circuit
US4071783A (en) * 1976-11-29 1978-01-31 International Business Machines Corporation Enhancement/depletion mode field effect transistor driver
JPS53140962A (en) * 1977-05-16 1978-12-08 Hitachi Denshi Ltd Electronic switch circuit
US4168536A (en) * 1977-06-30 1979-09-18 International Business Machines Corporation Capacitor memory with an amplified cell signal
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
JPS5567235A (en) * 1978-11-14 1980-05-21 Nec Corp Output circuit
JPS55150189A (en) * 1979-05-10 1980-11-21 Nec Corp Memory circuit
JPS5625291A (en) * 1979-08-07 1981-03-11 Nec Corp Semiconductor circuit

Also Published As

Publication number Publication date
EP0023655B1 (en) 1985-07-03
US4535255A (en) 1985-08-13
EP0023655A3 (en) 1982-11-17
EP0023655A2 (en) 1981-02-11
JPS5619585A (en) 1981-02-24
US4379346A (en) 1983-04-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)