DE3047297C2 - - Google Patents

Info

Publication number
DE3047297C2
DE3047297C2 DE3047297A DE3047297A DE3047297C2 DE 3047297 C2 DE3047297 C2 DE 3047297C2 DE 3047297 A DE3047297 A DE 3047297A DE 3047297 A DE3047297 A DE 3047297A DE 3047297 C2 DE3047297 C2 DE 3047297C2
Authority
DE
Germany
Prior art keywords
substrate
semiconductor
implanted
light
annealing treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3047297A
Other languages
German (de)
English (en)
Other versions
DE3047297A1 (de
Inventor
Kazuo Ayase Kanagawa Jp Nishiyama
Tetsunosuke Tokyo Jp Yanada
Michio Yokohama Kanagawa Jp Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3047297A1 publication Critical patent/DE3047297A1/de
Application granted granted Critical
Publication of DE3047297C2 publication Critical patent/DE3047297C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
DE19803047297 1979-12-17 1980-12-16 Verfahren zur herstellung von halbleiterbauelementen Granted DE3047297A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374679A JPS56100412A (en) 1979-12-17 1979-12-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
DE3047297A1 DE3047297A1 (de) 1981-09-17
DE3047297C2 true DE3047297C2 (enExample) 1993-04-01

Family

ID=15779889

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803047297 Granted DE3047297A1 (de) 1979-12-17 1980-12-16 Verfahren zur herstellung von halbleiterbauelementen

Country Status (7)

Country Link
US (1) US4482393A (enExample)
JP (1) JPS56100412A (enExample)
CA (1) CA1143867A (enExample)
DE (1) DE3047297A1 (enExample)
FR (1) FR2473787B1 (enExample)
GB (1) GB2065973B (enExample)
NL (1) NL191621C (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
JPS58186933A (ja) * 1982-04-23 1983-11-01 Sharp Corp 半導体素子の製造方法
JPS5939927U (ja) * 1982-09-07 1984-03-14 株式会社日立国際電気 薄膜生成装置の基板加熱装置
JPS5984422A (ja) * 1982-11-04 1984-05-16 Pioneer Electronic Corp 半導体装置の製造方法
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
JPH0666330B2 (ja) * 1983-08-10 1994-08-24 セイコーエプソン株式会社 半導体装置の製造方法
JPS6077419A (ja) * 1983-10-04 1985-05-02 Seiko Epson Corp 半導体装置の製造方法
JPS6085512A (ja) * 1983-10-18 1985-05-15 Seiko Epson Corp 半導体装置の製造方法
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4732866A (en) * 1984-03-12 1988-03-22 Motorola Inc. Method for producing low noise, high grade constant semiconductor junctions
JPS60257089A (ja) * 1984-05-31 1985-12-18 ニチデン機械株式会社 赤外線加熱装置
JPS6122634A (ja) * 1984-07-10 1986-01-31 Matsushita Electric Ind Co Ltd 赤外線ランプアニ−ル装置
US4576652A (en) * 1984-07-12 1986-03-18 International Business Machines Corporation Incoherent light annealing of gallium arsenide substrate
GB8418063D0 (en) * 1984-07-16 1984-08-22 Atomic Energy Authority Uk Temperature control in vacuum
US4566913A (en) * 1984-07-30 1986-01-28 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced electron trapping
US4617066A (en) * 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
JPS61219133A (ja) * 1985-03-25 1986-09-29 Sony Corp 光照射アニ−ル装置
US4621413A (en) * 1985-06-03 1986-11-11 Motorola, Inc. Fabricating a semiconductor device with reduced gate leakage
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JPS62128525A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 化合物半導体基板のアニ−ル方法
FR2594529B1 (fr) * 1986-02-19 1990-01-26 Bertin & Cie Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium
US4729962A (en) * 1986-03-24 1988-03-08 The United States Of America As Represented By The United States Department Of Energy Semiconductor junction formation by directed heat
US4751193A (en) * 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
FR2605647B1 (fr) * 1986-10-27 1993-01-29 Nissim Yves Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
US4916082A (en) * 1989-03-14 1990-04-10 Motorola Inc. Method of preventing dielectric degradation or rupture
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5215588A (en) * 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
JP2534608B2 (ja) * 1993-01-18 1996-09-18 セイコーエプソン株式会社 半導体装置の製造方法
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
JP2601209B2 (ja) * 1994-08-23 1997-04-16 セイコーエプソン株式会社 半導体装置の製造方法
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
US5795627A (en) * 1997-02-14 1998-08-18 Advanced Micro Devices, Inc. Method for annealing damaged semiconductor regions allowing for enhanced oxide growth
US5904575A (en) * 1997-02-14 1999-05-18 Advanced Micro Devices, Inc. Method and apparatus incorporating nitrogen selectively for differential oxide growth
US6040019A (en) * 1997-02-14 2000-03-21 Advanced Micro Devices, Inc. Method of selectively annealing damaged doped regions
JP3450163B2 (ja) * 1997-09-12 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6174388B1 (en) 1999-03-15 2001-01-16 Lockheed Martin Energy Research Corp. Rapid infrared heating of a surface
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6496648B1 (en) 1999-08-19 2002-12-17 Prodeo Technologies, Inc. Apparatus and method for rapid thermal processing
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
CN101324470B (zh) 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US7133604B1 (en) 2005-10-20 2006-11-07 Bergstein David M Infrared air heater with multiple light sources and reflective enclosure
WO2008058397A1 (en) 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
KR102618822B1 (ko) * 2013-09-06 2023-12-28 어플라이드 머티어리얼스, 인코포레이티드 원형 램프 어레이들
JP6916988B2 (ja) * 2017-05-29 2021-08-11 ウシオ電機株式会社 光加熱装置
US10669430B2 (en) * 2018-07-17 2020-06-02 Varian Semiconductor Equipment Associates, Inc. Anti-reflective coating for transparent end effectors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692572A (en) * 1969-08-12 1972-09-19 Wolfgang Strehlow Epitaxial film process and products thereof
US3763348A (en) * 1972-01-05 1973-10-02 Argus Eng Co Apparatus and method for uniform illumination of a surface
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
JPS5577145A (en) * 1978-12-05 1980-06-10 Ushio Inc Annealing furnace
US4229232A (en) * 1978-12-11 1980-10-21 Spire Corporation Method involving pulsed beam processing of metallic and dielectric materials
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps

Also Published As

Publication number Publication date
NL8006759A (nl) 1981-07-16
US4482393A (en) 1984-11-13
GB2065973B (en) 1983-11-23
NL191621B (nl) 1995-07-03
NL191621C (nl) 1995-11-06
FR2473787A1 (fr) 1981-07-17
CA1143867A (en) 1983-03-29
FR2473787B1 (fr) 1985-10-25
GB2065973A (en) 1981-07-01
JPS614173B2 (enExample) 1986-02-07
DE3047297A1 (de) 1981-09-17
JPS56100412A (en) 1981-08-12

Similar Documents

Publication Publication Date Title
DE3047297C2 (enExample)
DE3541587C2 (de) Verfahren zur Herstellung eines dünnen Halbleiterfilms
DE3855765T2 (de) Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung
DE2449688C3 (de) Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
DE3885121T2 (de) Herstellung von Widerständen aus polykristallinem Silizium.
DE3221180A1 (de) Verfahren und vorrichtung zur herstellung einer halbleitervorrichtung
DE1086512B (de) Verfahren zum Herstellen eines gleichrichtenden UEberganges in einem Siliziumkoerper
DE1952626B2 (de) Verfahren zur herstellung von isolationsschichten auf halbleitersubstraten durch hochfrequenz-kathodenzerstaeubung
DE2354523C3 (de) Verfahren zur Erzeugung von elektrisch isolierenden Sperrbereichen in Halbleitermaterial
DE2160427C3 (enExample)
DE3330032A1 (de) Behandlungsverfahren zum herbeifuehren plastischen fliessens einer glasschicht auf einem halbleiterplaettchen
EP1068646A1 (de) Verfahren zur einseitigen dotierung eines halbleiterkörpers
DE19534574C2 (de) Dotierverfahren zur Herstellung von Homoübergängen in Halbleitersubstraten
DE69431535T2 (de) Verfahren zur Herstellung von einer Chalcopyrit-Halbleiterdünnschichtstruktur mit einem spezifischen Dotiermaterial
DE2005271C3 (de) Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat
DE102004029412A1 (de) Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
DE2756861A1 (de) Verfahren zum dotieren eines amorphen halbleitermaterials durch ionenimplantation
DE19920871B4 (de) Verfahren zum Aktivieren von Ladungsträgern durch strahlungsunterstützte Wärmebehandlung
DE2705444A1 (de) Verfahren zur lokal begrenzten erwaermung eines festkoerpers
DE69535661T2 (de) Verfahren zur Herstellung eines Films für eine Halbleiteranordnung bei niedriger Temperatur
DE1564086B2 (de) Verfahren zum herstellen eines halbleitersystems
DE3442460A1 (de) Verfahren zur dotierung von halbleitermaterial
DE3839210A1 (de) Verfahren zum axialen einstellen der traegerlebensdauer
DE3033203A1 (de) Photoelement
DE2837653A1 (de) Verfahren zur lokal begrenzten erwaermung von festkoerpern

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 21/268

D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN